UMA6NT1G [ONSEMI]
Dual Common Emitter Bias Resistor Transistors; 双共发射极偏置电阻晶体管型号: | UMA6NT1G |
厂家: | ONSEMI |
描述: | Dual Common Emitter Bias Resistor Transistors |
文件: | 总5页 (文件大小:60K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
UMA4NT1, UMA6NT1
Preferred Devices
Dual Common Emitter Bias
Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
http://onsemi.com
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the UMC2NT1 series, two
BRT devices are housed in the SOT−353 package which is ideal for
low power surface mount applications where board space is at a
premium.
3
2
1
R1
R1
Q1
Q2
4
5
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb−Free Packages are Available
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted, common for Q
Ux M G
A
1
and Q , − minus sign for Q (PNP) omitted)
G
2
1
SC−88A/SOT−353
CASE 419A
STYLE 7
Rating
Symbol
Value
50
Unit
Vdc
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
V
CBO
CEO
V
50
Vdc
I
C
100
mAdc
Ux = Device Code
x = 0 or 1
THERMAL CHARACTERISTICS
M
= Date Code
Thermal Resistance, Junction-to-Ambient
(Surface Mounted)
R
833
°C/W
q
JA
G
= Pb−Free Package
(Note: Microdot may be in either location)
Operating and Storage Temperature Range T , T
−65 to +150
*150
°C
J
stg
Total Package Dissipation @ T = 25°C
P
D
mW
A
ORDERING INFORMATION
(Note 1)
†
Device
UMA4NT1
UMA4NT1G
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
SOT−353
3000/Tape & Reel
3000/Tape & Reel
SOT−353
(Pb−Free)
UMA6NT1
SOT−353
3000/Tape & Reel
3000/Tape & Reel
DEVICE RESISTOR VALUES
UMA6NT1G
SOT−353
(Pb−Free)
Device
R1 (K)
R2 (K)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
UMA4NT1
UMA6NT1
10
47
∞
∞
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
May, 2006 − Rev. 4
UMA4NT1/D
UMA4NT1, UMA6NT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
I
I
−
−
−
−
100
500
nAdc
nAdc
mAdc
CBO
(V = 50 V, I = 0)
CB
E
Collector-Emitter Cutoff Current
(V = 50 V, I = 0)
CEO
CB
B
Emitter-Base Cutoff Current
(V = 6.0, I = 5.0 mA)
UMA4NT1
UMA6NT1
I
−
−
−
−
0.9
0.2
EBO
EB
C
ON CHARACTERISTICS
Collector-Base Breakdown Voltage
V
V
50
50
−
−
−
−
Vdc
Vdc
(BR)CBO
(I = 10 mA, I = 0)
C
E
Collector-Emitter Breakdown Voltage
(BR)CEO
(I = 2.0 mA, I = 0)
C
B
DC Current Gain
UMA4NT1
UMA6NT1
h
FE
160
160
250
250
−
−
(V = 10 V, I = 5.0 mA)
CE
C
Collector−Emitter Saturation Voltage
(I = 10 mA, I = 0.3 mA)
V
−
−
−
−
0.25
0.2
−
Vdc
Vdc
Vdc
kW
CE(SAT)
C
B
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kW)
V
OL
−
CC
B
L
Output Voltage (off)
V
OH
4.9
(V = 5.0 V, V = 0.5 V, R = 1.0 kW)
CC
B
L
Input Resistor
UMA4NT1
UMA6NT1
R1
7.0
33
10
47
13
61
250
200
150
100
50
0
R
= 833°C/W
q
JA
−50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Figure 1. Derating Curve
http://onsemi.com
2
UMA4NT1, UMA6NT1
TYPICAL ELECTRICAL CHARACTERISTICS − UMA4NT1
10
1000
I /I = 10
C
B
25°C
T = 75°C
A
−25°C
100
T = 75°C
1
0.1
A
25°C
−25°C
10
1
V
CE
= 10 V
0.01
0
10
20
30
40
50
60
70
80
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
10
1
12
10
8
f = 1 MHz
= 0 mA
T = 25°C
A
I
E
75°C
T = −25°C
A
6
4
25°C
0.1
2
0
V
O
= 5 V
5
0.01
0
5
10
15
20
25
30
35
40
45
0
1
2
3
4
6
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
IN
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
http://onsemi.com
3
UMA4NT1, UMA6NT1
TYPICAL ELECTRICAL CHARACTERISTICS − UMA6NT1
10
1000
I /I = 10
C
B
T = 75°C
A
25°C
−25°C
1
0.1
−25°C
25°C
T = 75°C
A
100
V
CE
= 10 V
10
0.01
0
10
20
30
40
50
60
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 6. VCE(sat) versus IC
Figure 7. DC Current Gain
100
10
1
12
10
8
75°C
T = −25°C
f = 1 MHz
= 0 mA
T = 25°C
A
I
E
A
25°C
6
4
0.1
0.01
2
0
V
O
= 5 V
0.001
0
5
10
15
20
25
30
35
40
45
0
1
2
3
4
5
V , REVERSE BIAS VOLTAGE (VOLTS)
R
V , INPUT VOLTAGE (VOLTS)
IN
Figure 8. Output Capacitance
Figure 9. Output Current versus Input Voltage
http://onsemi.com
4
UMA4NT1, UMA6NT1
PACKAGE DIMENSIONS
SC−88A / SOT−353 / SC−70
CASE 419A−02
ISSUE J
NOTES:
A
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
G
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5
4
3
INCHES
DIM MIN MAX
MILLIMETERS
−B−
S
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
1
2
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.087
0.053
0.043
0.012
0.026 BSC
0.65 BSC
M
M
−−−
0.004
0.004
0.004
0.010
0.012
−−−
0.10
0.10
0.10
0.25
0.30
D 5 PL
0.2 (0.008)
B
K
N
S
0.008 REF
0.20 REF
N
0.079
0.087
2.00
2.20
STYLE 7:
PIN 1. BASE
J
2. EMITTER
3. BASE
C
4. COLLECTOR
5. COLLECTOR
K
H
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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UMA4NT1/D
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