关闭背景特效

F2000D [OSRAM]

InGaAlP-High Brightness-Lumineszenzdiode (617nm, High Current and Flux), InGaAlP High Brightness LED (617nm, High Current and Flux); InGaAlP系，高亮度， Lumineszenzdiode （ 617nm ，大电流和磁场）的InGaAlP高亮度LED（ 617nm ，大电流和磁场）

F2000D


元器件型号：	F2000D
生产厂家：	OSRAM GMBH
描述和应用：	InGaAlP-High Brightness-Lumineszenzdiode (617nm, High Current and Flux), InGaAlP High Brightness LED (617nm, High Current and Flux) InGaAlP系，高亮度， Lumineszenzdiode （ 617nm ，大电流和磁场）的InGaAlP高亮度LED（ 617nm ，大电流和磁场）光电静态存储器
PDF文件：	总6页 (文件大小：215K)
下载文档：	下载PDF数据表文档文件
型号参数：F2000D参数

F2000ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

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32 MPD

F2001

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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321 POLYFET

F2001A

Visible LED

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0 INFINEON

F2001ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

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38 MPD

F2001S

TRANSISTOR | MOSFET | N-CHANNEL | 70V V(BR)DSS | 800MA I(D)

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95 ETC

F2002

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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71 POLYFET

F2002ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

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18 MPD

F2002S

TRANSISTOR | MOSFET | N-CHANNEL | 70V V(BR)DSS | 1.6A I(D)

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20 ETC

F2003

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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71 POLYFET

F2003ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

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13 MPD

F2004

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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87 POLYFET

F2004ERW

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

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36 MPD

F20-055

Split Bobbin Power Transformer, 1.1VA, ROHS COMPLIANT

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1 TRIAD

F20-055-C2

Split Bobbin Power Transformer, 1.1VA, ROHS COMPLIANT

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1 TRIAD

F20-055-C2-B

Split Bobbin Power Transformer, 1.1VA, ROHS COMPLIANT

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1 TRIAD

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