SFH4235 [OSRAM]

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung; IR- Lumineszenzdiode ( 850纳米),麻省理工学院达赫Ausgangsleistung
SFH4235
型号: SFH4235
厂家: OSRAM GMBH    OSRAM GMBH
描述:

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung
IR- Lumineszenzdiode ( 850纳米),麻省理工学院达赫Ausgangsleistung

文件: 总9页 (文件大小:159K)
中文:  中文翻译
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IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung  
High Power Infrared Emitter (850 nm)  
Lead (Pb) Free Product - RoHS Compliant  
SFH 4235  
Wesentliche Merkmale  
Features  
• IR-Lichtquelle mit hohem Wirkungsgrad  
• Chipgröße (emittierende Fläche) 1 x 1 mm2  
• max. Gleichstrom 1 A  
• IR lightsource with high efficiency  
• die-size (emitting area) 1 x 1 mm2  
• max. DC-current 1 A  
• niedriger Wärmewiderstand (9 K/W)  
• Schwerpunktswellenlänge 850 nm  
• ESD-sicher bis 2 kV nach JESD22-A114-E  
• Erweiterte Korrosionsfestigkeit  
• Low thermal resistance (9 K/W)  
• Center of spectral emission at 850 nm  
• ESD safe up to 2 kV acc. to JESD22-A114-E  
Superior Corrosion Robustness  
(see chapter package outlines)  
(s.a. Abschnitt Maßzeichnung)  
Anwendungen  
Applications  
• Infrarotbeleuchtung für Kameras  
• Überwachungssysteme  
• Infrared Illumination for cameras  
• Surveillance systems  
• Fahrer-Assistenz Systeme  
• Beleuchtung für Bilderkennungssysteme  
• Driver assistance systems  
• Machine vision systems  
Sicherheitshinweise  
Safety Advices  
Je nach Betriebsart emittieren diese Bauteile  
hochkonzentrierte, nicht sichtbare Infrarot-  
Strahlung, die gefährlich für das menschliche  
Auge sein kann. Produkte, die diese Bauteile  
enthalten, müssen gemäß den Sicherheits-  
richtlinien der IEC-Normen 60825-1 und 62471  
behandelt werden.  
Depending on the mode of operation, these  
devices emit highly concentrated non visible  
infrared light which can be hazardous to the  
human eye. Products which incorporate these  
devices have to follow the safety precautions  
given in IEC 60825-1 and IEC 62471.  
Typ  
Type  
Bestellnummer  
Ordering Code  
Gesamtstrahlungsfluss1) (IF = 1A, tp = 10 ms)  
Total Radiant Flux1)  
Φe (mW)  
SFH 4235  
Q65110A8900  
630 (typ. 950)  
1) gemessen mit Ulbrichtkugel / measured with integrating sphere  
2011-03-30  
1
SFH 4235  
Grenzwerte (TA = 25 °C)  
Maximum Ratings  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
Betriebs- und Lagertemperatur  
Top , Tstg  
– 40 + 125  
°C  
Operating and storage temperature range  
Sperrschichttemperatur  
Junction temperature  
TJ  
+ 145  
°C  
V
Sperrspannung  
Reverse voltage  
VR  
1
Vorwärtsgleichstrom  
Forward current  
IF  
1
A
Stoßstrom, tp = 200 µs, D = 0  
Surge current  
IFSM  
Ptot  
5
A
Leistungsaufnahme  
Power consumption  
3.4  
9
W
K/W  
Wärmewiderstand Sperrschicht - Lötstelle  
Thermal resistance junction - soldering point  
RthJS  
Kennwerte (TA = 25 °C)  
Characteristics  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
Wellenlänge der Strahlung  
Wavelength at peak emission  
IF = 1 A, tp = 10 ms  
λpeak  
λcentroid  
Δλ  
860  
850  
30  
nm  
nm  
nm  
Centroid-Wellenlänge der Strahlung  
Centroid wavelength  
IF = 1 A, tp = 10 ms  
Spektrale Bandbreite bei 50% von Imax  
Spectral bandwidth at 50% of Imax  
IF = 1 A, tp = 10 ms  
Abstrahlwinkel  
Half angle  
ϕ
± 60  
1
Grad  
deg.  
mm2  
Aktive Chipfläche  
Active chip area  
A
Abmessungen der aktiven Chipfläche  
Dimension of the active chip area  
L × B  
L × W  
1 × 1  
mm²  
2011-03-30  
2
SFH 4235  
Kennwerte (TA = 25 °C)  
Characteristics (cont’d)  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
Schaltzeiten, Ie von 10% auf 90% und von 90% tr / tf  
auf 10%, IF = 5 A, RL = 50 Ω  
7 / 14  
ns  
Switching times, Ιe from 10% to 90% and from  
90% to 10%, IF = 5 A, RL = 50 Ω  
Durchlassspannung  
Forward voltage  
IF = 1 A, tp = 100 µs  
IF = 5 A, tp = 100 µs  
VF  
VF  
3.0 (< 3.4)  
3.5 (< 4.5)  
V
V
Strahlstärke  
Ie typ  
320  
mW/sr  
Radiant intensity  
IF = 1 A, tp = 100 μs  
Temperaturkoeffizient von Ie bzw. Φe  
Temperature coefficient of Ie or Φe  
IF = 1 A, tp = 10 ms  
TCI  
– 0.3  
– 2  
%/K  
Temperaturkoeffizient von VF  
Temperature coefficient of VF  
IF = 1 A, tp = 10 ms  
TCV  
mV/K  
nm/K  
Temperaturkoeffizient von λ  
Temperature coefficient of λ  
IF = 1 A, tp = 10 ms  
TCλ,centroid  
+ 0.3  
2011-03-30  
3
SFH 4235  
Gesamtstrahlungsfluss1) Φe  
Total Radiant Flux1) Φe  
Bezeichnung  
Parameter  
Symbol  
Werte  
Values  
Einheit  
Unit  
-EA  
-EB  
Gesamtstrahlungsfluss  
Total Radiant Flux  
Φe min  
Φe max  
630  
1000  
800  
1250  
mW  
mW  
IF = 1 A, tp = 10 ms  
1)  
Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 1.6:1) /  
Only one group in one packing unit (variation lower 1.6:1)  
Abstrahlcharakteristik  
Radiation Characteristics Irel = f (ϕ)  
OHL01660  
40˚  
30˚  
20˚  
10˚  
0˚  
ϕ
1.0  
50˚  
0.8  
0.6  
0.4  
0.2  
0
60˚  
70˚  
80˚  
90˚  
100˚  
1.0  
0.8  
0.6  
0.4  
0˚  
20˚  
40˚  
60˚  
80˚  
100˚  
120˚  
2011-03-30  
4
SFH 4235  
Relative spektrale Emission  
Relative Spectral Emission  
Durchlassstrom  
Forward Current  
IF = f (VF)  
Relativer Gesamtstrahlungsfluss  
Relative Total Radiant Flux  
Φe/Φe(1A) = f (IF)  
Irel = f (λ)  
Single pulse, tp = 100 μs  
Single pulse, tp = 100 μs  
OHF04188  
OHF04187  
101  
OHF04132  
101  
100  
A
Φe  
Φe (1 A)  
%
IF  
Irel  
80  
60  
40  
20  
100  
5
100  
5
10-1  
5
10-1  
5
10-2  
5
10-2  
10-3  
0
10-2  
5
10-1  
5
100  
101  
2
2.5  
3
3.5  
V
VF  
4
700  
750  
800  
850  
nm 950  
λ
A
IF  
Max. zulässiger Durchlassstrom  
Max. Permissible Forward Current  
IF = f (TA), RthJS = 9 K/W  
Zulässige Impulsbelastbarkeit  
Permissible Pulse Handling  
Capability IF = f (tp), TS = 85 °C,  
Duty cycle D = parameter  
OHF04189  
OHF04190  
5.5  
A
1.1  
tP  
A
tP  
IF  
IF  
IF  
D
= T  
T
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
D
=
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.33  
0.5  
1
0
20 40 60 80 100 ˚C 130  
10-5 10-4 10-3 10-2 10-1 100 101 s 102  
TS  
tp  
2011-03-30  
5
SFH 4235  
Maßzeichnung1)  
Package Outlines  
0...0.1 (0.004)  
6.2 (0.244)  
5.8 (0.228)  
4.25 (0.167)  
4.15 (0.163)  
0.65 (0.026)  
0.45 (0.018)  
ø0.81 (0.031)  
ø0.73 (0.028)  
(R0.85 (0.033))  
Cathode  
1.9 (0.075)  
1.7 (0.067)  
1.1 (0.043)  
0.9 (0.035)  
2.0 (0.079)  
1.6 (0.063)  
GPLY7072  
Korrosionsfestigkeit besser als EN 60068-2-60 (method 4):  
mit erweitertem Korrosionstest: 40°C / 90%rh / 15ppm H2S / 336h  
Corrosion robustness better than EN 60068-2-60 (method 4):  
with enhanced corrosion test: 40°C / 90%rh / 15ppm H2S / 336h  
Kathodenkennung:  
Cathode mark:  
Markierung  
mark  
Gewicht / Approx. weight:  
0.2 g  
Gurtung / Polarität und Lage  
Method of Taping / Polarity and Orientation  
Verpackungseinheit 800/Rolle, ø180 mm  
Packing unit 800/reel, ø180 mm  
Cathode/Collector Side  
4 (0.157)  
0.3 (0.012)  
0.3 (0.012)  
1.55 (0.061)  
2 (0.079)  
6.35 (0.250)  
8 (0.315)  
1.9 (0.075)  
OHAY0508  
1)  
Maße in mm (inch) / Dimensions in mm (inch)  
2011-03-30  
6
SFH 4235  
Empfohlenes Lötpaddesign  
Recommended Solder Pad Design  
12.0 (0.472)  
11.6 (0.457)  
11.6 (0.457)  
1.6 (0.063)  
3 Lötstellen  
ø2.5 (0.098)  
3 solder points  
ø4.0 (0.157)  
Heatsink attach  
ø4.0 (0.157)  
1.6 (0.063)  
Kupfer  
Copper  
Thermisch optimiertes PCB  
Thermal enhanced PCB  
Lötstopplack  
Solder resist  
Footprint  
Lötpasten Schablone  
Solder paste stencil  
Bare Copper  
Freies Kupfer  
OHAY0681  
Achtung:  
Anode und Heatsink sind elektrisch verbunden  
Attention:  
Anode and Heatsink are electrically connected  
2011-03-30  
7
SFH 4235  
Lötbedingungen  
Vorbehandlung nach JEDEC Level 2  
Soldering Conditions  
Preconditioning acc. to JEDEC Level 2  
Reflow Lötprofil für bleifreies Löten  
Reflow Soldering Profile for lead free soldering  
(nach J-STD-020C)  
(acc. to J-STD-020C)  
OHLA0687  
300  
Maximum Solder Profile  
Recommended Solder Profile  
Minimum Solder Profile  
˚C  
+0 ˚C  
-5 ˚C  
260 ˚C  
245 ˚C  
235 ˚C  
255 ˚C  
240 ˚C  
250  
T
5 ˚C  
+5 ˚C  
-0 ˚C  
217 ˚C  
10 s min  
200  
150  
100  
50  
30 s max  
Ramp Down  
6 K/s (max)  
100 s max  
120 s max  
Ramp Up  
3 K/s (max)  
25 ˚C  
0
0
50  
100  
150  
200  
250  
s
300  
t
Published by  
OSRAM Opto Semiconductors GmbH  
Leibnizstraße 4, D-93055 Regensburg  
www.osram-os.com  
© All Rights Reserved.  
The information describes the type of component and shall not be considered as assured characteristics.  
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain  
dangerous substances. For information on the types in question please contact our Sales Organization.  
Packing  
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.  
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing  
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs  
incurred.  
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical  
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.  
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected  
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.  
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain  
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.  
2011-03-30  
8
Mouser Electronics  
Related Product Links  
720-SFH4235 - Osram Opto Semiconductor SFH 4235  

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