PSL12-MH [PACELEADER]
SILICON EPITAXIAL PLANER TYPE; 硅外延平面型
| 型号： | PSL12-MH |
| 厂家： | 
PACELEADER INDUSTRIAL |
| 描述： | SILICON EPITAXIAL PLANER TYPE |
| 文件： | 总2页 (文件大小：266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PSL12-MH thru PSL14-MH
SILICON EPITAXIAL PLANER TYPE
Low VF Chip Schottky Diodes
SOD-123H
0.146(3.7)
0.012(0.3) Typ.
0.130(3.3)
0.071(1.8)
0.055(1.4)
0.039(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
FEATURES
MECHANICAL DATA
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0 Ufizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Case JEDEC SOD-123H molded plastic
Terminals Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity Indicated by cathode band
Mounting Position Any
Exceeds environmental standards of ML-S-19500/228
Low leakage current
Weight 0.0393gram
o
MAXIMUM RATINGS (at TA=25 C unless otherwise noted)
Typ.
PARAMETER
CONDITIONS
SYMBOL
Min.
Max.
1.0
UNITS
A
See Fig.2
Forward rectified current
IO
8.3ms Single Half Sine-Wave Superimposed
on Rated Load (JEDEC Method)
Forward surge current
A
IFSM
25
0
mA
mA
1.0
10
VR=VRRM TA=25 C
Reverse current
IR
0
VR=VRRM TA=100 C
0
RJA
CJ
42
C / W
Thermal resistance
Junction to ambient
pF
Diode junction capacitance
Storage temperature
F=1MHz and applied 4vDC reverse voltage
130
0
TSTG
-55
+150
C
*1
*2
*3
*4
Operating Temperature
VRRM
VRMS
VR
VF
SYMBOLS
MARKING CODE
0
( C)
(V)
(V)
(V)
(V)
PSL12-MH
PSL13-MH
PSL14-MH
L2
L3
L4
20
30
40
14
21
28
20
30
40
0.38
0.40
0.40
-55 to + 125
*1 Repetitive peak reverse peak reverse
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
www.paceleader.tw
1
PSL12-MH thru PSL14-MH
SILICON EPITAXIAL PLANER TYPE
RATING AND CHARACTERISTICS CURVES PSL12-MH THRU PSL14-MH
www.paceleader.tw
2
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