2SC4638 [PANASONIC]
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching); 硅NPN三重扩散平面类型(高击穿电压高速开关)型号: | 2SC4638 |
厂家: | PANASONIC |
描述: | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
文件: | 总3页 (文件大小:65K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Power Transistors
2SC4638
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
10.0±0.2
5.5±0.2
4.2±0.2
Features
High-speed switching
■
2.7±0.2
●
●
High collector to base voltage VCBO
●
Low collector to emitter saturation voltage VCE(sat)
φ3.1±0.1
●
Full-pack package which can be installed to the heat sink with
one screw
1.3±0.2
Absolute Maximum Ratings (T =25˚C)
■
C
1.4±0.1
Parameter
Symbol
VCBO
VCES
VCEO
VEBO
ICP
Ratings
Unit
V
+0.2
–0.1
0.5
0.8±0.1
Collector to base voltage
800
800
V
2.54±0.25
Collector to emitter voltage
500
V
5.08±0.5
Emitter to base voltage
Peak collector current
Collector current
8
V
1
2
3
10
A
1:Base
2:Collector
3:Emitter
IC
5
A
TO–220 Full Pack Package(a)
Base current
IB
3
A
Collector power TC=25°C
40
PC
W
dissipation
Ta=25°C
2
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
100
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
VCB = 800V, IE = 0
IEBO
VEB = 5V, IC = 0
*
Collector to emitter voltage
VCEO(sus)
hFE1
IC = 0.2A, L = 25mH
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 3A
500
15
8
Forward current transfer ratio
hFE2
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 3A, IB = 0.6A
1
V
V
IC = 3A, IB = 0.6A
1.5
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 10V, IC = 0.5A, f = 1MHz
8
MHz
µs
1.0
3
IC = 3A, IB1 = 0.6A, IB2 = – 0.6A,
VCC = 200V
µs
1.0
µs
*VCEO(sus) Test circuit
50/60Hz
mercury relay
X
L 25mH
Y
120Ω
1Ω
6V
15V
G
1
Power Transistors
2SC4638
PC — Ta
IC — VCE
VCE(sat) — IC
80
8
7
6
5
4
3
2
1
0
100
IC/IB=5
TC=25˚C
(1) TC=Ta
70
30
10
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=2.0W)
IB=1200mA
60
50
40
30
20
10
0
1000mA
800mA
25˚C
TC=100˚C
3
1
600mA
(1)
400mA
300mA
0.3
0.1
200mA
150mA
–25˚C
100mA
50mA
20mA
(2)
(3)
0.03
0.01
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
0.01 0.03
0.1
0.3
1
3
10
(
)
( )
V
( )
A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Collector current IC
VBE(sat) — IC
hFE — IC
fT — IC
100
1000
1000
IC/IB=5
VCE=5V
VCE=10V
f=1MHz
TC=25˚C
30
10
300
100
300
100
TC=100˚C
–25˚C
25˚C
3
1
30
10
30
10
25˚C
TC=–25˚C
100˚C
0.3
0.1
3
1
3
1
0.03
0.01
0.3
0.1
0.3
0.1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
( )
A
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
Cob — VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
10000
100
IE=0
f=1MHz
TC=25˚C
Pulsed tw=1ms
Duty cycle=1%
IC/IB=5
10
ICP
IC
3000
1000
30
10
(IB1=–IB2
CC=250V
TC=25˚C
)
3
1
t=0.5ms
V
tstg
300
100
3
1
1ms
0.3
0.1
ton
10ms
DC
30
10
0.3
0.1
tf
0.03
0.01
3
1
0.03
0.01
Non repetitive pulse
TC=25˚C
0.003
0.1
0.3
1
3
10
30
100
0
1
2
3
4
5
6
7
8
1
3
10
30
100 300 1000
( )
V
( )
A
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
Collector current IC
2
Power Transistors
2SC4638
Area of safe operation, reverse bias ASO
Reverse bias ASO measuring circuit
8
Lcoil=50µH
L coil
IC/IB=5
(IB1=–IB2
7
)
TC=100˚C
T.U.T
IC
6
5
4
3
2
1
0
IB1
–IB2
Vin
VCC
V
clamp
tW
0
100 200 300 400 500 600 700 800
( )
V
Collector to emitter voltage VCE
Rth(t) — t
1000
100
10
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
(1)
(2)
1
0.1
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
s
Time
t
3
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