2SC4638 [PANASONIC]

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching); 硅NPN三重扩散平面类型(高击穿电压高速开关)
2SC4638
型号: 2SC4638
厂家: PANASONIC    PANASONIC
描述:

Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
硅NPN三重扩散平面类型(高击穿电压高速开关)

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文件: 总3页 (文件大小:65K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Power Transistors  
2SC4638  
Silicon NPN triple diffusion planar type  
For high breakdown voltage high-speed switching  
Unit: mm  
10.0±0.2  
5.5±0.2  
4.2±0.2  
Features  
High-speed switching  
2.7±0.2  
High collector to base voltage VCBO  
Low collector to emitter saturation voltage VCE(sat)  
φ3.1±0.1  
Full-pack package which can be installed to the heat sink with  
one screw  
1.3±0.2  
Absolute Maximum Ratings (T =25˚C)  
C
1.4±0.1  
Parameter  
Symbol  
VCBO  
VCES  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
+0.2  
–0.1  
0.5  
0.8±0.1  
Collector to base voltage  
800  
800  
V
2.54±0.25  
Collector to emitter voltage  
500  
V
5.08±0.5  
Emitter to base voltage  
Peak collector current  
Collector current  
8
V
1
2
3
10  
A
1:Base  
2:Collector  
3:Emitter  
IC  
5
A
TO–220 Full Pack Package(a)  
Base current  
IB  
3
A
Collector power TC=25°C  
40  
PC  
W
dissipation  
Ta=25°C  
2
Junction temperature  
Storage temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics (T =25˚C)  
C
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
100  
100  
Unit  
µA  
µA  
V
Collector cutoff current  
Emitter cutoff current  
VCB = 800V, IE = 0  
IEBO  
VEB = 5V, IC = 0  
*
Collector to emitter voltage  
VCEO(sus)  
hFE1  
IC = 0.2A, L = 25mH  
VCE = 5V, IC = 0.1A  
VCE = 5V, IC = 3A  
500  
15  
8
Forward current transfer ratio  
hFE2  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = 3A, IB = 0.6A  
1
V
V
IC = 3A, IB = 0.6A  
1.5  
Transition frequency  
Turn-on time  
Storage time  
Fall time  
fT  
ton  
tstg  
tf  
VCE = 10V, IC = 0.5A, f = 1MHz  
8
MHz  
µs  
1.0  
3
IC = 3A, IB1 = 0.6A, IB2 = – 0.6A,  
VCC = 200V  
µs  
1.0  
µs  
*VCEO(sus) Test circuit  
50/60Hz  
mercury relay  
X
L 25mH  
Y
120Ω  
1Ω  
6V  
15V  
G
1
Power Transistors  
2SC4638  
PC — Ta  
IC — VCE  
VCE(sat) — IC  
80  
8
7
6
5
4
3
2
1
0
100  
IC/IB=5  
TC=25˚C  
(1) TC=Ta  
70  
30  
10  
(2) With a 100 × 100 × 2mm  
Al heat sink  
(3) Without heat sink  
(PC=2.0W)  
IB=1200mA  
60  
50  
40  
30  
20  
10  
0
1000mA  
800mA  
25˚C  
TC=100˚C  
3
1
600mA  
(1)  
400mA  
300mA  
0.3  
0.1  
200mA  
150mA  
–25˚C  
100mA  
50mA  
20mA  
(2)  
(3)  
0.03  
0.01  
0
20 40 60 80 100 120 140 160  
0
2
4
6
8
10  
0.01 0.03  
0.1  
0.3  
1
3
10  
(
)
( )  
V
( )  
A
Ambient temperature Ta ˚C  
Collector to emitter voltage VCE  
Collector current IC  
VBE(sat) — IC  
hFE — IC  
fT — IC  
100  
1000  
1000  
IC/IB=5  
VCE=5V  
VCE=10V  
f=1MHz  
TC=25˚C  
30  
10  
300  
100  
300  
100  
TC=100˚C  
–25˚C  
25˚C  
3
1
30  
10  
30  
10  
25˚C  
TC=–25˚C  
100˚C  
0.3  
0.1  
3
1
3
1
0.03  
0.01  
0.3  
0.1  
0.3  
0.1  
0.01 0.03  
0.1  
0.3  
1
3
10  
0.01 0.03  
0.1  
0.3  
1
3
10  
0.01 0.03  
0.1  
0.3  
1
3
10  
( )  
A
( )  
A
( )  
Collector current IC A  
Collector current IC  
Collector current IC  
Cob — VCB  
ton, tstg, tf — IC  
Area of safe operation (ASO)  
10000  
100  
IE=0  
f=1MHz  
TC=25˚C  
Pulsed tw=1ms  
Duty cycle=1%  
IC/IB=5  
10  
ICP  
IC  
3000  
1000  
30  
10  
(IB1=–IB2  
CC=250V  
TC=25˚C  
)
3
1
t=0.5ms  
V
tstg  
300  
100  
3
1
1ms  
0.3  
0.1  
ton  
10ms  
DC  
30  
10  
0.3  
0.1  
tf  
0.03  
0.01  
3
1
0.03  
0.01  
Non repetitive pulse  
TC=25˚C  
0.003  
0.1  
0.3  
1
3
10  
30  
100  
0
1
2
3
4
5
6
7
8
1
3
10  
30  
100 300 1000  
( )  
V
( )  
A
( )  
Collector to emitter voltage VCE V  
Collector to base voltage VCB  
Collector current IC  
2
Power Transistors  
2SC4638  
Area of safe operation, reverse bias ASO  
Reverse bias ASO measuring circuit  
8
Lcoil=50µH  
L coil  
IC/IB=5  
(IB1=–IB2  
7
)
TC=100˚C  
T.U.T  
IC  
6
5
4
3
2
1
0
IB1  
–IB2  
Vin  
VCC  
V
clamp  
tW  
0
100 200 300 400 500 600 700 800  
( )  
V
Collector to emitter voltage VCE  
Rth(t) — t  
1000  
100  
10  
Note: Rth was measured at Ta=25˚C and under natural convection.  
(1) PT=10V × 0.2A (2W) and without heat sink  
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink  
(1)  
(2)  
1
0.1  
10–4  
10–3  
10–2  
10–1  
1
10  
102  
103  
104  
( )  
s
Time  
t
3

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