2SC4715R [PANASONIC]

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2SC4715R
型号: 2SC4715R
厂家: PANASONIC    PANASONIC
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Transistor  
2SC4715  
Silicon NPN epitaxial planer type  
For low-frequency high breakdown voltage amplification  
Unit: mm  
4.0±0.2  
Features  
Satisfactory linearity of forward current transfer ratio hFE  
.
High collector to emitter voltage VCEO  
Small collector output capacitance Cob.  
.
marking  
Absolute Maximum Ratings (Ta=25˚C)  
1
2
3
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
150  
150  
1.27 1.27  
V
2.54±0.15  
5
V
100  
mA  
mA  
mW  
˚C  
1:Emitter  
2:Collector  
3:Base  
IC  
50  
EIAJ:SC–72  
New S Type Package  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
300  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
µA  
V
Collector cutoff current  
VCB = 100V, IE = 0  
1
Collector to emitter voltage  
Emitter to base voltage  
VCEO  
VEBO  
IC = 100µA, IB = 0  
150  
5
IE = 10µA, IC = 0  
V
*1  
Forward current transfer ratio  
hFE  
VCE = 5V, IC = 10mA  
IC = 30mA, IB = 3mA  
VCB = 10V, IE = 0, f = 1MHz  
130  
330  
1
Collector to emitter saturation voltage VCE(sat)  
V
pF  
Collector output capacitance  
Transition frequency  
Cob  
fT  
3
VCB = 10V, IE = –10mA, f = 200MHz  
VCE = 10V, IC = 1mA, GV = 80dB  
Rg = 100k, Function = FLAT  
160  
150  
MHz  
Noise voltage  
NV  
mV  
*1  
h
Rank classification  
FE  
Rank  
hFE  
R
S
130 ~ 220  
185 ~ 330  
1
Transistor  
2SC4715  
PC — Ta  
IC — VCE  
VCE(sat) — IC  
500  
400  
300  
200  
100  
0
180  
150  
120  
90  
10  
IC/IB=10  
Ta=25˚C  
IB=10mA  
3
1
9mA  
8mA  
7mA  
6mA  
5mA  
4mA  
3mA  
Ta=75˚C  
–25˚C  
0.3  
0.1  
25˚C  
2mA  
1mA  
0.03  
0.01  
60  
30  
0.003  
0.001  
0
0
20 40 60 80 100 120 140 160  
0
2
4
6
8
10  
12  
1
3
10  
30  
100 300 1000  
(
)
( )  
V
(
)
Ambient temperature Ta ˚C  
Collector to emitter voltage VCE  
Collector current IC mA  
hFE — IC  
Cob — VCB  
300  
250  
200  
150  
100  
50  
6
f=1MHz  
IE=0  
Ta=25˚C  
VCE=5V  
5
Ta=75˚C  
25˚C  
4
3
2
1
0
–25˚C  
0
1
3
10  
30  
100 300 1000  
1
3
10  
30  
100  
(
)
( )  
Collector to base voltage VCB V  
Collector current IC mA  
2

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