2SD1251AOP [PANASONIC]

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, N TYPE PACKAGE-3;


型号：	2SD1251AOP
厂家：	PANASONIC
描述：	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, N TYPE PACKAGE-3
文件：	总3页 (文件大小：169K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Power Transistors

2SD1251, 2SD1251A

Silicon NPN triple diffusion junction type

For power amplification

Unit: mm

3.4±0.3

8.5±0.2

6.0±0.5

1.0±0.1

Features

Wide area of safe operation (ASO)

■

●

1.5max.

1.1max.

0.5max.

●

N type package enabling direct soldering of the radiating fin to

the printed circuit board, etc. of small electronic equipment.

0.8±0.1

Absolute Maximum Ratings (T =25˚C)

■

2.54±0.3

5.08±0.5

Parameter

Symbol

Ratings

Unit

1:Base

2:Collector

3:Emitter

N Type Package

Collector to

2SD1251

2SD1251A

2SD1251

V_CBO

base voltage

Collector to

Unit: mm

3.4±0.3

8.5±0.2

6.0±0.3

V_CEO

1.0±0.1

emitter voltage 2SD1251A

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

Base current

I_B

R0.5

0.8±0.1

Collector power T_C=25°C

0 to 0.4

2.54±0.3

P_C

1.1 max.

5.08±0.5

dissipation

Ta=25°C

1.3

Junction temperature

Storage temperature

T_j

150

˚C

1:Base

2:Collector

3:Emitter

T_stg

–55 to +150

N Type Package (DS)

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 20V, I_E= 0

I_EBO

V_EB= 8V, I_C= 0

2SD1251

2SD1251A

Collector to emitter

voltage

V_CEO(sus)

h_FE1

I_C= 0.2A, L = 25mH

V_CE= 3V, I_C= 0.1A

V_CE= 3V, I_C= 1A

Forward current transfer ratio

Base to emitter voltage

h_FE2

160

1.2

V_BE

V_CE= 3V, I_C= 1A

Collector to emitter saturation voltage V_CE(sat)

Transition frequency f_T

I_C= 2A, I_B= 0.4A

V_CE= 10V, I_C= 0.2A, f = 0.5MHz

MHz

Rank classification

CEO(sus)

Test circuit

FE2

50/60Hz mercury relay

Rank

h_FE2

I_C(A)

0.2

30 to 60

50 to 100

80 to 160

L 25mH

0.1

120Ω

15V

1Ω

60/80

V_CE(V)

Note: Ordering can be made by the common rank (OP rank h_FE2= 50 to 160) in the rank classification.

Power Transistors

2SD1251, 2SD1251A

P_C— Ta

I_C— V_CE

I_C— V_BE

2.4

2.0

1..6

1.2

0.8

0.4

3.2

T_C=25˚C

I_B=35mA

25˚C

T_C=100˚C

(1) T_C=Ta

(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

(P_C=1.3W)

V_CE=3V

2.8

2.4

2.0

1.6

1.2

0.8

0.4

–25˚C

30mA

25mA

20mA

(1)

15mA

10mA

5mA

(2)

(3)

20 40 60 80 100 120 140 160

0.4

0.8

1.2

1.6

2.0

2.4

(

)

( )

Base to emitter voltage V_BEV

Ambient temperature Ta ˚C

Collector to emitter voltage V_CE

V_CE(sat)— I_C

h_FE— I_C

C_ob— V_CB

10000

V_CE=3V

I_E=0

f=1MHz

T_C=25˚C

I_C/I_B=5

T_C=25˚C

3000

1000

T_C=100˚C

25˚C

300

100

300

100

–25˚C

T_C=100˚C

25˚C

0.3

0.1

–25˚C

0.03

0.01

0.01 0.03

0.1

0.3

0.01 0.03

0.1

0.3

0.1

0.3

100

(

)

( )

Collector to base voltage V_CBV

Collector current I_C

Area of safe operation (ASO)

R_th(t)— t

100

10³

10²

(1) Without heat sink

(2) With a 50 × 50 × 2mm Al heat sink

Non repetitive pulse

T_C=25˚C

(1)

(2)

I_CP

t=5ms

I_C

10ms

300ms

0.3

0.1

10^–1

10^–2

0.03

0.01

100 300 1000

10^–4

10^–3

10^–2

10^–1

10²

10³

10⁴

(

)

( )

t s

Collector to emitter voltage V_CE

Time

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

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equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

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defect which may arise later in your equipment.

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