2SD1261A [PANASONIC]

Silicon PNP epitaxial planar type Darlington(For power amplification and switching); PNP硅外延平面型达林顿（对于功率放大和开关）


型号：	2SD1261A
厂家：	PANASONIC
描述：	Silicon PNP epitaxial planar type Darlington(For power amplification and switching) PNP硅外延平面型达林顿（对于功率放大和开关）开关
文件：	总2页 (文件大小：67K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Power Transistors

2SB938, 2SB938A

Silicon PNP epitaxial planar type Darlington

For power amplification and switching

Unit: mm

3.4±0.3

8.5±0.2

6.0±0.5

1.0±0.1

Complementary to 2SD1261 and 2SD1261A

Features

High foward current transfer ratio h_FE

■

●

1.5max.

1.1max.

0.5max.

●

High-speed switching

N type package enabling direct soldering of the radiating fin to

●

0.8±0.1

the printed circuit board, etc. of small electronic equipment.

2.54±0.3

Absolute Maximum Ratings (T =25˚C)

■

5.08±0.5

1:Base

2:Collector

3:Emitter

Parameter

Symbol

Ratings

Unit

Collector to

2SB938

2SB938A

2SB938

–60

N Type Package

V_CBO

base voltage

Collector to

–80

Unit: mm

8.5±0.2

6.0±0.3

3.4±0.3

–60

1.0±0.1

V_CEO

emitter voltage 2SB938A

Emitter to base voltage

Peak collector current

Collector current

–80

V_EBO

I_CP

–5

–8

I_C

–4

R0.5

0.8±0.1

Collector power T_C=25°C

0 to 0.4

2.54±0.3

P_C

1.1 max.

5.08±0.5

dissipation

Ta=25°C

1.3

Junction temperature

Storage temperature

T_j

150

˚C

1:Base

2:Collector

3:Emitter

T_stg

–55 to +150

N Type Package (DS)

Electrical Characteristics (T =25˚C)

■

Parameter

Collector cutoff

Symbol

Conditions

min

typ

max

–200

–500

–2

Unit

2SB938

V_CB= –60V, I_E= 0

I_CBO

µA

current

2SB938A

2SB938

V_CB= –80V, I_E= 0

V_CE= –30V, I_B= 0

V_CE= –40V, I_B= 0

V_EB= –5V, I_C= 0

Collector cutoff

current

I_CEO

I_EBO

V_CEO

h_FE1

µA

2SB938A

Emitter cutoff current

Collector to emitter 2SB938

voltage 2SB938A

–60

–80

I_C= –30mA, I_B= 0

V_CE= –3V, I_C= – 0.5A

V_CE= –3V, I_C= –3A

1000

2000

Forward current transfer ratio

Base to emitter voltage

h_FE2

10000

–2.5

–2

V_BE

_C= –3A, I_B= –12mA

Collector to emitter saturation voltage V_CE(sat)

I_C= –5A, I_B= –20mA

–4

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= –10V, I_C= – 0.5A, f = 1MHz

0.3

MHz

µs

I_C= –3A, I_B1= –12mA, I_B2= 12mA

µs

0.5

µs

^*h_FE2Rank classification

Internal Connection

Rank

h_FE2

2000 to 5000 4000 to 10000

Power Transistors

2SB938, 2SB938A

P_C— Ta

I_C— V_CE

I_C— V_BE

–6

–5

–4

–3

–2

–1

–10

–8

–6

–4

–2

T_C=25˚C

V_CE=–3V

(1) T_C=Ta

(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

(P_C=1.3W)

I_B=–3.0mA

–2.5mA

–2.0mA

–1.5mA

(1)

–1.0mA

25˚C

– 0.5mA

T_C=100˚C

–25˚C

– 0.4mA

– 0.3mA

– 0.2mA

(2)

(3)

20 40 60 80 100 120 140 160

–1

–2

–3

–4

–5

– 0.8

–1.6

–2.4

–3.2

(

)

( )

Base to emitter voltage V_BEV

Ambient temperature Ta ˚C

Collector to emitter voltage V_CE

V_CE(sat)— I_C

h_FE— I_C

C_ob— V_CB

–100

10⁶

10000

I_C/I_B=250

V_CE=–3V

I_E=0

f=1MHz

T_C=25˚C

–30

–10

3000

1000

10⁵

10⁴

10³

10²

T_C=100˚C

25˚C

–3

–1

300

100

25˚C

T_C=100˚C

–25˚C

– 0.3

– 0.1

– 0.03

– 0.01

– 0.01 – 0.03 – 0.1 – 0.3

–1

–3

–10

– 0.01 – 0.03 – 0.1 – 0.3

–1

–3

–10

– 0.1 – 0.3

–1

–3

–10 –30 –100

( )

Collector to base voltage V_CBV

Collector current I_C

Area of safe operation (ASO)

R_th(t)— t

–100

10³

10²

(1) Without heat sink

(2) With a 50 × 50 × 2mm Al heat sink

Non repetitive pulse

T_C=25˚C

–30

–10

(1)

(2)

I_CP

t=1ms

10ms

I_C

–3

–1

300ms

– 0.3

– 0.1

10^–1

10^–2

– 0.03

– 0.01

–1

–3

–10 –30 –100 –300 –1000

10^–4

10^–3

10^–2

10^–1

10²

10³

10⁴

( )

Collector to emitter voltage V_CE

Time

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