2SD1261 [PANASONIC]
Silicon NPN triple diffusion planar type Darlington(For power amplification); 硅NPN三重扩散平面型达林顿（对于功率放大）
| 型号： | 2SD1261 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion planar type Darlington(For power amplification) |
| 文件： | 总2页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD1261, 2SD1261A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Unit: mm
3.4±0.3
8.5±0.2
6.0±0.5
1.0±0.1
Complementary to 2SB938 and 2SB938A
Features
High foward current transfer ratio hFE
■
●
●
High-speed switching
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
1.5max.
1.1max.
0.5max.
●
0.8±0.1
2.54±0.3
Absolute Maximum Ratings (T =25˚C)
■
C
5.08±0.5
1:Base
Parameter
Symbol
Ratings
Unit
1
2
3
2:Collector
3:Emitter
N Type Package
Collector to
2SD1261
2SD1261A
2SD1261
60
VCBO
V
base voltage
Collector to
80
Unit: mm
60
8.5±0.2
6.0±0.3
3.4±0.3
VCEO
V
1.0±0.1
emitter voltage 2SD1261A
Emitter to base voltage
Peak collector current
Collector current
80
VEBO
ICP
5
V
A
A
8
IC
4
40
R0.5
R0.5
Collector power TC=25°C
0.8±0.1
0 to 0.4
PC
W
2.54±0.3
1.1 max.
dissipation
Ta=25°C
1.3
5.08±0.5
Junction temperature
Storage temperature
Tj
150
˚C
˚C
1:Base
2:Collector
3:Emitter
1
2
3
Tstg
–55 to +150
N Type Package (DS)
Electrical Characteristics (T =25˚C)
■
C
Parameter
Collector cutoff
Symbol
ICBO
Conditions
min
typ
max
200
200
500
500
2
Unit
2SD1261
2SD1261A
2SD1261
2SD1261A
VCB = 60V, IE = 0
µA
current
VCB = 80V, IE = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
Collector cutoff
current
ICEO
IEBO
VCEO
hFE1
µA
mA
V
Emitter cutoff current
VEB = 5V, IC = 0
Collector to emitter 2SD1261
voltage 2SD1261A
60
80
IC = 30mA, IB = 0
VCE = 3V, IC = 0.5A
VCE = 3V, IC = 3A
1000
1000
Forward current transfer ratio
Base to emitter voltage
*
hFE2
10000
VBE
VCE = 3V, IC = 3A
2.5
2
V
V
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
VCE = 10V, IC = 0.5A, f = 1MHz
Collector to emitter saturation voltage VCE(sat)
4
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
20
0.5
4
MHz
µs
IC = 3A, IB1 = 12mA, IB2 = –12mA,
VCC = 50V
µs
1
µs
C
E
*hFE2 Rank classification
Internal Connection
B
Rank
hFE2
R
Q
P
1000 to 2500 2000 to 5000 4000 to 10000
1
Power Transistors
2SD1261, 2SD1261A
PC — Ta
IC — VCE
IC — VBE
50
10
8
10
TC=25˚C
VCE=3V
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
(1)
IB=4.0mA
40
30
20
10
0
8
6
4
2
0
3.5mA
3.0mA
2.5mA
2.0mA
25˚C
–25˚C
1.5mA
6
TC=100˚C
1.0mA
0.5mA
4
2
(2)
(3)
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
0
0.8
1.6
2.4
3.2
(
)
(
V
)
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
Cob — VCB
100
105
10000
IC/IB=250
VCE=3V
IE=0
f=1MHz
TC=25˚C
30
10
3000
1000
104
103
102
10
TC=100˚C
25˚C
3
1
300
100
TC=100˚C
25˚C
–25˚C
–25˚C
0.3
0.1
30
10
0.03
0.01
3
1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
30
100
(
A
)
(
A
)
( )
Collector to base voltage VCB V
Collector current IC
Collector current IC
Area of safe operation (ASO)
Rth(t) — t
100
103
102
10
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
Non repetitive pulse
TC=25˚C
30
10
(1)
(2)
ICP
IC
t=10ms
1ms
3
1
300ms
1
0.3
0.1
10–1
10–2
0.03
0.01
1
3
10
30
100 300 1000
10–4
10–3
10–2
10–1
1
10
102
103
104
(
V
)
( )
t s
Collector to emitter voltage VCE
Time
2
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