2SD2345TX [PANASONIC]
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| 型号： | 2SD2345TX |
| 厂家： | 
PANASONIC |
| 描述： | 暂无描述 晶体 小信号双极晶体管 光电二极管 放大器 |
| 文件： | 总2页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistor
2SD2345
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
1.6±0.15
0.8±0.1
0.4
0.4
Features
High foward current transfer ratio hFE
■
●
.
1
●
●
●
Low collector to emitter saturation voltage VCE(sat)
.
High emitter to base voltage VEBO
.
3
Low noise voltage NV.
2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
0.2±0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
50
40
V
15
V
100
mA
mA
mW
˚C
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
IC
50
Collector power dissipation
Junction temperature
Storage temperature
PC
125
Marking symbol : 1Z
Tj
125
Tstg
–55 ~ +125
˚C
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
100
1
Unit
nA
µA
V
VCB = 20V, IE = 0
VCE = 20V, IB = 0
Collector cutoff current
ICEO
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
VCBO
VCEO
VEBO
IC = 10µA, IE = 0
IC = 1mA, IB = 0
50
40
V
IE = 10µA, IC = 0
VCE = 10V, IC = 2mA
IC = 10mA, IB = 1mA
15
V
*
Forward current transfer ratio
hFE
400
2000
0.2
Collector to emitter saturation voltage VCE(sat)
0.05
120
V
Transition frequency
fT
V
CB = 10V, IE = –2mA, f = 200MHz
MHz
*hFE Rank classification
Rank
hFE
R
S
T
400 ~ 800 600 ~ 1200 1000 ~ 2000
1
Transistor
2SD2345
PC — Ta
IC — VCE
IC — VBE
150
125
100
75
160
140
120
100
80
120
100
80
60
40
20
0
VCE=10V
Ta=25˚C
25˚C
Ta=75˚C
–25˚C
IB=100µA
90µA
80µA
70µA
60µA
50µA
40µA
30µA
60
50
40
20µA
10µA
25
20
0
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IE
100
1800
250
200
150
100
50
VCB=10V
Ta=25˚C
IC/IB=10
VCE=10V
30
10
1500
1200
900
600
300
0
3
1
Ta=75˚C
25˚C
–25˚C
0.3
0.1
Ta=75˚C
–25˚C
25˚C
0.03
0.01
0
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
– 0.1 – 0.3
–1
–3
–10 –30 –100
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Emitter current IE mA
Cob — VCB
NV — IC
NV — VCE
8
100
80
60
40
20
0
100
80
60
40
20
0
VCE=10V
GV=80dB
Function=FLAT
Ta=25˚C
IE=0
f=1MHz
Ta=25˚C
7
6
5
4
3
2
1
0
Rg=100kΩ
Rg=100kΩ
22kΩ
5kΩ
22kΩ
5kΩ
IC=1mA
GV=80dB
Function=FLAT
Ta=25˚C
1
3
10
30
100
0.01
0.03
0.1
0.3
1
1
3
10
30
100
( )
V
(
)
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
Collector current IC mA
2
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