2SD2469P [PANASONIC]
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220E, FULL PACK-3;
| 型号： | 2SD2469P |
| 厂家： | 
PANASONIC |
| 描述： | Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220E, FULL PACK-3 |
| 文件： | 总4页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD2469, 2SD2469A
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB1607
Unit: mm
Features
4.6±0.2
■
●
Low collector to emitter saturation voltage VCE(sat)
Satisfactory linearity of foward current transfer ratio hFE
±0.3
2.9±0.2
φ3.
●
●
Large collector current IC
●
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
2.6±0.1
0.7±0.1
.2±0
Absolute Maximum Ratings (T =25˚C)
■
C
45±0.15
Parameter
Symbol
Ratings
Uni
0.7±0.1
Collector to
2SD2469
2SD2469A
2SD2469
130
VCBO
2.54±0.2
5.08±0.4
base voltage
Collector to
150
80
VCEO
V
1
2 3
7°
emitter voltage 2SD2469A
Emitter to base voltage
Peak collector current
Collector current
100
VEBO
ICP
7
A
A
1:Base
2:Collector
3:Emitter
15
TO–220E Full Pack Package
I
7
Collector power TC=25°C
40
PC
W
dissipation
Ta=25°C
2
Junction temperature
Storage temperaure
Tj
1
˚C
˚C
Tstg
–55 to +
ElecticaChacteristics (T =5˚C)
■
C
Parameter
ymol
I
Conditions
min
typ
max
10
Unit
µA
Coector cutff curre
Emitter utoff c
VCB 100V, IE = 0
IEBO
VCEO
hE1
VEB = 5V, I= 0
50
µA
Collector to em
80
100
45
IC = 0mA, IB = 0
V
voltage
9A
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 3A
IC = 5A, IB = 0.25A
Forward current transfer ratio
*
hFE2
90
260
0.5
1.5
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
V
V
IC = 5A, IB = 0.25A
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 10V, IC = 0.5A, f = 10MHz
30
0.5
1.5
0.1
MHz
µs
IC = 3A, IB1 = 0.3A, IB2 = – 0.3A,
VCC = 50V
µs
µs
*hFE2 Rank classification
Rank
hFE2
Q
P
90 to 180
130 to 260
1
Power Transistors
2SD2469, 2SD2469A
PC — Ta
IC — VCE
VCE(sat) — IC
50
10
8
(1) IC/IB=10
(2) IC/IB=20
TC=25˚C
TC=25˚C
(1) TC=Ta
(2) With a 100 × 100 × 2mm
10
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
(1)
40
30
20
10
0
3
IB=55mA
50mA
45mA
40mA
6
(2)
(1)
35mA
30mA
0.3
4
20mA
15mA
10mA
(2)
2
0.03
0.01
(3)
(4)
5mA
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
0
0.01
0.03
1
3
(
)
(
V
)
( )
A
Ambient temperature Ta ˚C
Collector to emitter voltge VC
CollectIC
VCE(sat) — IC
VE(sat) IC
VBE(sat) — IC
100
100
IC/IB=20
IC/IB=20
(1) IC/IB=10
10
(2) IC/IB=20
TC=25˚
30
10
3
10
3
1
(
(2)
3
1
3
1
TC=–25˚C
0.3
0.1
TC=1
25C
100˚C
25˚C
0.3
0.1
0.3
0.1
5˚C
0.03
0.01
0.03
0.01
0.03
0.01
0.01 3
0.1
3
10
0.1
0.3
1
3
10
0
0.01 0.03
0.1
0.3
1
3
10
( )
A
(
)
( )
Collector current IC A
Colctor cIC
Collector current IC
hFE — IC
fT — IC
Cob — VCB
10000
10000
10000
VCE=2
VCE=10V
f=10MHz
TC=25˚C
IE=0
f=1MHz
TC=25˚C
3000
3000
1000
3000
1000
1000
300
100
300
100
300
100
TC=100˚C
25˚C
–25˚C
30
10
30
10
30
10
3
1
3
1
3
1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
30
100
( )
A
(
A
)
( )
Collector to base voltage VCB V
Collector current IC
Collector current IC
2
Power Transistors
2SD2469, 2SD2469A
ton, tstg, tf — IC
Area of safe operation (ASO)
100
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10 (IB1=–IB2
Non repetitive pulse
TC=25˚C
30
10
)
30
ICP
V
CC=50V
TC=25˚C
10 IC
t=0.5ms
3
1
3
1
10ms
DC
tstg
ton
1ms
0.3
0.1
0.3
0.1
tf
0.03
0.01
0.03
0.01
0
1
2
3
4
5
6
7
8
1
3
10
30
100 00 10
( )
A
( )
V
Collector current IC
Collector to emitter voltge VC
Rth(t) — t
103
102
10
(1) Without heink
(2) With a 0 × 10× 2mat sink
1)
2)
1
10–1
10–2
10–
10–3
10–1
1
10
102
103
104
( )
s
Time
t
3
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Electric Industrial Co., Ltd.
相关型号：
2SD2469Q
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220E, FULL PACK-3
PANASONIC
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