2SK3559 [PANASONIC]
Power Field-Effect Transistor, 30A I(D), 230V, 0.074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TOP3F-B1, 3 PIN;
| 型号： | 2SK3559 |
| 厂家： | 
PANASONIC |
| 描述： | Power Field-Effect Transistor, 30A I(D), 230V, 0.074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TOP3F-B1, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总16页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New
Achieving the industry's lowest Ron Qg along with high switching speed through the use of
micro-cell structure and a newly developed design.
Low On-Resistance, High-Speed Switching MOSFET Series
Product Outline
2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal
for PDP sustain drivers, inverters and power supplies for various equipment. Offering the lowest Ron Qg of its
kind and improved switching speed, these products enhance equipment efficiency. This results in savings in
labor and total cost reduction.
Features
z Low On-resistance: 29m (minimum) (45% lower than conventional Panasonic product)
z Low Ron Qg: 2.50nC (40% lower than conventional Panasonic product) -- industry's lowest
z High-speed switching
Applications
z PDP sustain drivers, inverters and power supply for various equipment
Specifications
Product
tr
tf
Package
VDSS
(V)
ID
Pc
Ron (typ)
Qg
(nC)
45
(n s)
(A)
20
30
30
50
50
(W)
100
100
200
100
100
(mohm)
65
(n s)
40
2SK3628
2SK3559
2SK3665
2SK3637
2SK3652
45
50
TOP-3F
TOP-3F
TOP-3L
TOP-3E
TOP-3E
230
230
200
200
230
55
55
45
50
55
45
50
125
140
140
145
29
85
29
105
The products and specification are subject to change without any notice. Please ask for the latest Product Standards to guarantee the satisfaction of your product requirements.
1 Kotari-yakemachi, Nagaokakyo, Kyoto 617-8520, Japan
E00128AE
Tel. (075)951-8151
http://www.panasonic.co.jp/semicon/
New publication, effective from Jul.23 2002.
Silicon MOSFET
2SK3628
N-channel enhancement mode MOSFET
High speed switching
Unit : mm
5.0 0.2
15.0 0.3
11.0 0.2
(3.2)
φ 3.2 0.1
■ Absolute Maximum Ratings
Symbol
VDSS
VGSS
ID
Rating
230
±30
20
Parameter
Unit
V
2.0 0.1
2.0 0.2
Drain-Source breakdown voltage
Gate-Source voltage
1.1 0.1
0.6 0.2
V
5.45 0.3
A
DC
10.9 0.5
2
Drain current
A
IDP
80
Pulse
1
3
Avalanche energy capability
m J
W
*1
EAS
PD
570
100
TOP-3F-B1
Allowable power Tc = 25 °C *2
dissipation
W
3
Ta = 25 °C *3
PD
°C
Junction temperature
Storage temperature
150
Tj
-55 to +150
°C
Tstg
*1 : Guarantee of single pulse avalanche energy.
(L = 2.23mH, IL = 20A, VDD = 50V, 1pulse, Ta = 25 °C )
*2 : Tc = 25 °C
*3 : Ta = 25 °C (Without heat sink )
■ Electrical Characteristics (Tc = 25 3 °C)
Parameter
Symbol
IDSS
Condition
Min
−
Typ
−
Max
Unit
Drain Cutoff Current
Gate-source Leakage Current
Drain-source Breakdown Voltage
Gate Threshold Voltage
Drain-source on Resistance
Forward Transfer Admittance
Diode Forward Voltage
Input Capacitance
100
1
VDS = 184V, VGS = 0
VGS = 30 V, VDS = 0
ID = 1 mA, VGS = 0
µ A
µ A
IGSS
−
−
VDSS
Vth
230
1.7
−
−
−
V
V
3.7
−
65
VDS = 25 V, ID = 1 mA
RDS (on) VGS = 10 V, ID = 10 A
m Ω
S
85
Yfs
7
14
−
VDS = 25 V, ID = 10 A
VDSF
Ciss
Coss
Crss
td (on)
tr
IDR = 20 A, VGS = 0
−
−
V
-1.5
−
−
2300
330
30
p F
p F
p F
n s
n s
n s
n s
VDS = 25 V, VGS = 0,
f = 1MHz
Output Capacitance
−
−
Reverse Transfer Capacitance
Turn-on delay time
−
−
−
−
−
−
−
−
−
−
35
VDD = 100V, ID = 15 A
26
Rise time
220
36
Turn-off delay time
td (off)
tf
RL = 6.7 Ω, VGS = 10 V
Fall time
2SK3628
140
120
100
80
1000
100
10
(1) Tc=Ta
Non repetitive pulse
(2) With a 100 × 100 × 2mm
Tc=25˚C
Al heat sink
(3) Without heat sink
IDP
ID
(1)
t=100µs
t=1ms
60
t=10ms
t=1s
40
1
20
(2)
(3)
0.1
0
10
100
VDS (V)
1000
1
0
20 40 60 80 100 120 140 160
Ta (˚C)
Silicon MOSFET
2SK3559
N-channel enhancement mode MOSFET
High speed switching
Unit : mm
5.0 0.2
15.0 0.3
11.0 0.2
(3.2)
φ 3.2 0.1
■ Absolute Maximum Ratings
Symbol
VDSS
VGSS
ID
Rating
230
Parameter
Unit
V
2.0 0.1
2.0 0.2
Drain-Source breakdown voltage
Gate-Source voltage
1.1 0.1
0.6 0.2
V
±30
30
5.45 0.3
A
DC
10.9 0.5
Drain current
A
IDP
120
1
2 3
Pulse
Tc = 25 °C *1
Ta = 25 °C *2
PD
100
W
W
Allowable power
dissipation
TOP-3F-B1
PD
3
Junction temperature
Storage temperature
Tj
150
°C
°C
-55 to +150
Tstg
*1 : Tc = 25 °C
*2 : Ta = 25 °C (Without heat sink )
■ Electrical Characteristics (Tc = 25 3 °C)
Parameter
Symbol
IDSS
Condition
Min
−
Typ
−
Max
Unit
Drain Cutoff Current
Gate-source Leakage Current
Drain-source Breakdown Voltage
Gate Threshold Voltage
Drain-source on Resistance
Forward Transfer Admittance
Diode Forward Voltage
Input Capacitance
100
1
VDS = 184V, VGS = 0
VGS = 30 V, VDS = 0
ID = 1 mA, VGS = 0
µ A
µ A
IGSS
−
−
VDSS
Vth
230
2
−
−
V
V
4
−
55
VDS = 25 V, ID = 1 mA
−
RDS (on) VGS = 10 V, ID = 15 A
m Ω
S
74
Yfs
8
16
−
VDS = 25 V, ID = 15 A
VDSF
Ciss
Coss
Crss
td (on)
tr
IDR = 30 A, VGS = 0
−
−
V
-1.5
−
−
3170
440
35
p F
p F
p F
n s
n s
n s
n s
VDS = 25 V, VGS = 0,
f = 1MHz
Output Capacitance
−
−
Reverse Transfer Capacitance
Turn-on delay time
−
−
−
−
−
−
−
−
−
−
36
VDD = 100V, ID = 15 A
25
Rise time
217
35
Turn-off delay time
td (off)
tf
RL = 6.7 Ω, VGS = 10 V
Fall time
2SK3559
140
120
100
80
1000
100
10
(1) Tc=Ta
Non repetitive pulse
(2) With a 100 × 100 × 2mm
Tc=25˚C
Al heat sink
(3) Without heat sink
IDP
ID
(1)
t=100µs
t=1ms
60
40
t=10ms
t=1s
1
20
(2)
(3)
0
0.1
0
20 40 60 80 100 120 140 160
100
VDS (V)
1000
10
1
Ta (˚C)
Silicon MOSFET
2SK3665
N-channel enhancement mode MOSFET
High speed switching
Unit : mm
20.0 0.5
5.0 0.3
(3.0)
φ 3.3 0.2
■ Absolute Maximum Ratings
(1.5)
Symbol
VDSS
VGSS
ID
Rating
200
Parameter
Unit
V
(1.5)
2.0 0.3
2.7 0.3
3.0 0.3
1.0 0.2
Drain-Source breakdown voltage
Gate-Source voltage
0.6 0.2
V
±30
30
5.45 0.3
A
DC
10.9 0.5
Drain current
A
IDP
120
Pulse
1
2
3
m J
W
W
°C
Avalanche energy capability
*1
EAS
PD
1800
180
TOP-3L
Allowable power Tc = 25 °C *2
dissipation
3
Ta = 25 °C *3
PD
D
S
Junction temperature
Storage temperature
150
Tj
-55 to +150
°C
Tstg
*1 : Guarantee of single pulse avalanche energy.
(L = 2mH, IL = 30A, VDD = 100V, 1pulse, Ta = 25 °C )
G
*2 : Tc = 25 °C
*3 : Ta = 25 °C (Without heat sink )
■ Electrical Characteristics (Tc = 25 3 °C)
Parameter
Symbol
IDSS
Condition
Min
−
Typ
−
Max
Unit
Drain Cutoff Current
Gate-source Leakage Current
Drain-source Breakdown Voltage
Gate Threshold Voltage
Drain-source on Resistance
Forward Transfer Admittance
Input Capacitance
100
1
VDS = 160V, VGS = 0
VGS = 30 V, VDS = 0
ID = 1 mA, VGS = 0
µ A
µ A
IGSS
−
−
VDSS
Vth
200
1.5
−
−
−
V
V
3.5
−
50
VDS = 10 V, ID = 1 mA
RDS (on) VGS = 10 V, ID = 15 A
m Ω
S
68
Yfs
8
16
−
VDS = 25 V, ID = 15 A
Ciss
−
3170
440
35
−
−
p F
p F
p F
n s
n s
n s
n s
VDS = 25 V, VGS = 0,
Coss
−
Output Capacitance
f = 1MHz
Crss
Reverse Transfer Capacitance
Turn-on delay time
−
−
−
−
−
−
−
−
−
−
td (on)
36
VDD = 100V, ID = 15 A
tr
42
Rise time
230
50
Turn-off delay time
td (off)
tf
RL = 6.7 Ω, VGS = 10 V
Fall time
2SK3665
■ Electrical Characteristics (Tc = 25 3 °C)
Parameter
Symbol
VDSF
Trr
Condition
Min
−
Typ
Max
Unit
Diode forward Voltage
Reverse recovery Time
Reverse recovery Charge
Total Gate Charge
−
-1.5
−
V
IDR = 30V, VGS = 0
−
182
819
n s
L = 230 µH, VDD = 100V
IDR = 15 A, di/dt = 100A/µs
Qrr
−
−
n C
n C
n C
n C
Qg
−
−
55
10
16
−
−
−
VDD = 100 V, ID = 25 A
VGS = 10 V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
−
■ Thermal characteristics
Thermal resistance
(channel to case)
Rth (ch-c)
Rth (ch-a)
°C/W
°C/W
−
−
−
−
0.69
41.6
Thermal resistance
(channel to ambient)
2SK3665
1000
100
10
200
150
Non repetitive pulse
(1) Tc=Ta
(2) Without heat sink
Tc=25˚C
IDP
ID
(1)
t=100µs
1ms
10ms
DC
100
50
0
1
(2)
0.1
10
100
1000
1
25
150
0
50
100 125
75
Drain- Source Voltage (V)
Ta (˚C)
100.0
Without heat sink
10.0
1.0
With heat sink
0.1
1
0.001
0.01
0.1
100
10
1000
t (sec)
1.000
0.100
0.010
0.001
d=1
d=0.5
d=0.2
d=0.1
d=0.05
d=0.02
d=0.01
t
T
Rth(ch-c)=0.69˚C/W
d=t/T
10
1
0.001
0.01
0.1
100
1000
tw (msec)
2SK3665
Derating curve for safety operation
125
100
Apply this derating
curve for current of safety
operation range
when Tc>25˚C.
Is/b secondary
breakdown line
75
50
PC line
25
0
140 150
20
10
50 60
80
110 120
100 130
0
30 40
90
70
Case temperature (˚C)
Silicon MOSFET
2SK3637
N-channel enhancement mode MOSFET
High speed switching
Unit : mm
15.5 0.5
3.0 0.3
5˚
φ 3.2 0.1
5˚
■ Absolute Maximum Ratings
5˚
5˚
5˚
(4.0)
2.0 0.2
Symbol
VDSS
VGSS
ID
Rating
200
Parameter
Unit
V
1.1 0.1
0.7 0.1
Drain-Source breakdown voltage
Gate-Source voltage
5.45 0.3
V
±30
50
10.9 0.5
A
DC
5˚
Drain current
1
2
3
A
IDP
200
Pulse
m J
W
W
°C
Avalanche energy capability
*1
EAS
PD
2000
100
TOP-3E
Allowable power Tc = 25 °C *2
dissipation
3
Ta = 25 °C *3
PD
D
S
Junction temperature
Storage temperature
150
Tj
-55 to +150
°C
Tstg
*1 : Guarantee of single pulse avalanche energy.
(L = 0.8mH, IL = 50A, VDD = 100V, 1pulse, Ta = 25 °C )
*2 : Tc = 25 °C
*3 : Ta = 25 °C (Without heat sink )
G
■ Electrical Characteristics (Tc = 25 3 °C)
Parameter
Symbol
IDSS
Condition
Min
−
Typ
−
Max
Unit
Drain Cutoff Current
Gate-source Leakage Current
Drain-source Breakdown Voltage
Gate Threshold Voltage
Drain-source on Resistance
Forward Transfer Admittance
Input Capacitance
100
1
VDS = 160V, VGS = 0
VGS = 30 V, VDS = 0
ID = 1 mA, VGS = 0
µ A
µ A
IGSS
−
−
VDSS
Vth
200
2
−
−
V
V
4
−
VDS = 25 V, ID = 10 mA
−
RDS (on) VGS = 10 V, ID = 25 A
29
30
m Ω
S
40
Yfs
15
−
−
VDS = 25 V, ID = 25 A
Ciss
4550
750
75
−
−
p F
p F
p F
n s
n s
n s
n s
VDS = 25 V, VGS = 0,
Coss
−
Output Capacitance
f = 1MHz
Crss
Reverse Transfer Capacitance
Turn-on delay time
−
−
−
−
−
−
−
−
−
−
td (on)
50
VDD = 100V, ID = 25 A
tr
125
390
140
Rise time
Turn-off delay time
td (off)
tf
RL = 4 Ω, VGS = 10 V
Fall time
2SK3637
■ Electrical Characteristics (Tc = 25 3 °C)
Parameter
Symbol
VDSF
Trr
Condition
Min
−
Typ
Max
Unit
Diode forward Voltage
Reverse recovery Time
Reverse recovery Charge
Total Gate Charge
−
-1.5
−
V
IDR = 50V, VGS = 0
−
210
820
n s
L = 230 µH, VDD = 100V
IDR = 25 A, di/dt = 100A/µs
Qrr
−
−
n C
n C
n C
n C
Qg
−
−
85
30
12
−
−
−
VDD = 100 V, ID = 25 A
VGS = 10 V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
−
■ Thermal characteristics
Thermal resistance
(channel to case)
Rth (ch-c)
Rth (ch-a)
°C/W
°C/W
−
−
−
−
1.25
41.6
Thermal resistance
(channel to ambient)
2SK3637
1000
100
10
120
110
100
90
(1) Tc=Ta
(2) Without heat sink
Non repetitive pulse
Tc=25˚C
IDP
ID
t=100µs
(1)
80
70
60
50
40
30
20
1ms
DC
10ms
100ms
1
10
0
(2)
0.1
10
100
1000
1
25
100
150
0
50
125
75
Drain- Source Voltage (V)
Ta (˚C)
Silicon MOSFET
2SK3652
N-channel enhancement mode MOSFET
High speed switching
Unit : mm
15.5 0.5
3.0 0.3
φ 3.2 0.1
5˚
5˚
■ Absolute Maximum Ratings
5˚
5˚
5˚
(4.0)
2.0 0.2
Symbol
VDSS
VGSS
ID
Rating
230
Parameter
Unit
V
1.1 0.1
0.7 0.1
Drain-Source breakdown voltage
Gate-Source voltage
5.45 0.3
V
±30
50
10.9 0.5
A
DC
5˚
Drain current
1
2
3
A
IDP
230
Pulse
m J
W
W
°C
Avalanche energy capability
*1
EAS
PD
2200
100
TOP-3E
Allowable power Tc = 25 °C *2
dissipation
3
Ta = 25 °C *3
PD
D
S
Junction temperature
Storage temperature
150
Tj
-55 to +150
°C
Tstg
*1 : Guarantee of single pulse avalanche energy.
(L = 1mH, IL = 50A, VDD = 100V, 1pulse, Ta = 25 °C )
*2 : Tc = 25 °C
*3 : Ta = 25 °C (Without heat sink )
G
■ Electrical Characteristics (Tc = 25 3 °C)
Parameter
Symbol
IDSS
Condition
Min
−
Typ
−
Max
Unit
Drain Cutoff Current
Gate-source Leakage Current
Drain-source Breakdown Voltage
Gate Threshold Voltage
Drain-source on Resistance
Forward Transfer Admittance
Input Capacitance
100
1
VDS = 184V, VGS = 0
VGS = 30 V, VDS = 0
ID = 1 mA, VGS = 0
µ A
µ A
IGSS
−
−
VDSS
Vth
230
2
−
−
V
V
4
−
VDS = 25 V, ID = 10 mA
−
RDS (on) VGS = 10 V, ID = 25 A
29
35
m Ω
S
40
Yfs
17
−
−
VDS = 25 V, ID = 25 A
Ciss
5950
850
80
−
−
p F
p F
p F
n s
n s
n s
n s
VDS = 25 V, VGS = 0,
Coss
−
Output Capacitance
f = 1MHz
Crss
Reverse Transfer Capacitance
Turn-on delay time
−
−
−
−
−
−
−
−
−
−
td (on)
65
VDD = 100V, ID = 25 A
tr
140
470
145
Rise time
Turn-off delay time
td (off)
tf
RL = 4 Ω, VGS = 10 V
Fall time
2SK3652
■ Electrical Characteristics (Tc = 25 3 °C)
Parameter
Symbol
VDSF
Trr
Condition
Min
−
Typ
Max
Unit
Diode forward Voltage
Reverse recovery Time
Reverse recovery Charge
Total Gate Charge
−
-1.5
−
V
IDR = 50V, VGS = 0
−
235
n s
L = 230 µH, VDD = 100V
IDR = 25 A, di/dt = 100A/µs
Qrr
−
−
1180
n C
n C
n C
n C
Qg
−
−
105
40
−
−
−
VDD = 100 V, ID = 25 A
VGS = 10 V
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
14
−
■ Thermal characteristics
Thermal resistance
(channel to case)
Rth (ch-c)
Rth (ch-a)
°C/W
°C/W
−
−
−
−
1.25
41.6
Thermal resistance
(channel to ambient)
2SK3652
1000
100
10
120
110
100
90
(1) Tc=Ta
(2) Without heat sink
Non repetitive pulse
Tc=25˚C
IDP
ID
t=100µs
(1)
80
70
60
50
40
30
20
1ms
DC
10ms
100ms
1
10
0
(2)
0.1
25
100
150
0
50
125
75
10
100
1000
1
Ta (˚C)
Drain- Source Voltage (V)
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and semiconductors described in this material
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ment if any of the products or technologies described in this material and controlled under the
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Consult our sales staff in advance for information on the following applications:
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(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
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Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
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2001 MAR
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