2SK65Q [PANASONIC]

Small Signal Field-Effect Transistor, 0.002A I(D), 1-Element, N-Channel, Silicon, Junction FET, NS-B1, 3 PIN;


型号：	2SK65Q
厂家：	PANASONIC
描述：	Small Signal Field-Effect Transistor, 0.002A I(D), 1-Element, N-Channel, Silicon, Junction FET, NS-B1, 3 PIN 放大器晶体管
文件：	总2页 (文件大小：31K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Silicon Junction FETs (Small Signal)

2SK65

Silicon N-Channel Junction FET

For impedance conversion in low frequency

For electret capacitor microphone

unit: mm

2.0±0.2

4.5±0.1

1.0

■ Features

● Diode is connected between gate and source

● Low noise voltage

■ Absolute Maximum Ratings (Ta = 25°C)

Parameter

Drain to Source voltage

Gate to Drain voltage

Drain to Source current

Drain to Gate current

Gate to Source current

Allowable power dissipation

Symbol

V_DSO

V_GDO

I_DSO

Ratings

Unit

−12

0.45±0.05

°C

2.54

0.8±0.1

I_DGO

I_GSO

1: Drain

2: Gate

3: Source

P_D

S Type Package

Operating ambient temperature T_opr

Storage temperature T_stg

−10 to +70

−20 to +150

°C

■ Electrical Characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Drain to Source cut-off current

I_DSS

V_DS= 4.5V, V_GS= 0, R_S= 2.2kΩ ± 1%

V_DS= 4.5V, V_GS= 0

0.04

0.8

Mutual conductance

Noise figure

g_m

300

500

µS

µV

R_S= 2.2kΩ ± 1%, f = 1kHz

V_DS= 4.5V, R_S= 2.2kΩ ± 1%

C_G= 10pF, A-curve

V_DS= 4.5V, R_S= 2.2kΩ ± 1%

C_G= 10pF, e_G= 100mV, f = 70Hz

V_DS= 12V, R_S= 2.2kΩ ± 1%

C_G= 10pF, e_G= 100mV, f = 70Hz

V_DS= 1V, R_S= 2.2kΩ ± 1%

C_G= 10pF, e_G= 100mV, f = 70Hz

G_V1

−10

−9.5

−11

Voltage gain

G_V2

G_V3

^*I_DSSrank classification and G_Vvalue

Runk

I_DSS(mA)

0.04 to 0.2

> −13

> −12

< 3

0.15 to 0.8

> −12

> −11

< 3

G_V1(dB)

G_V2(dB)

∆| G_V1− G_V2| (dB)

Silicon Junction FETs (Small Signal)

2SK65

P_D

I_DV_DS

I_D

V_GS

800

700

600

500

400

300

200

100

1.2

1.0

0.8

0.6

0.4

0.2

V_DS=4.5V

Ta=25˚C

V_GS=0V

– 0.1V

– 0.2V

– 0.3V

Ta=–25˚C

25˚C

75˚C

– 0.4V

– 0.5V

– 0.6V

– 0.7V

20 40 60 80 100 120 140 160

–2.0

–1.6

–1.2

– 0.8 – 0.4

)

(

)

(

)

(

Gate to source voltage V_GSV

Ambient temperature Ta ˚C

Drain to source voltage V_DS

g_m

V_GS

g_m

I_D

1.2

1.0

0.8

0.6

0.4

0.2

1.2

1.0

0.8

0.6

0.4

0.2

V_DS=4.5V

f=1kHz

Ta=25˚C

V_DS=4.5V

f=1kHz

Ta=25˚C

V_DS=4.5V

R_g=100kW

Ta=25˚C

I_DSS=0.9mA

0.3mA

0.1mA

f=100Hz

0.3mA

1kHz

10kHz

0.1mA

–1.0

– 0.8 – 0.6 – 0.4 – 0.2

0.2

0.4

0.6

0.8

1.0

0.2

0.4

0.6

0.8

1.0

( )

(

)

(

)

Gate to source voltage V_GS

Drain current I_DmA

R_g

V_DS=4.5V

I_D=300µA

Ta=25˚C

V_DS=4.5V

I_D=300µA

Ta=25˚C

f=100Hz

1kHz

10kHz

R_g=10kΩ

100kΩ

1000kΩ

0.1

0.3

100

0.01 0.03

0.1

0.3

(

)

(

)

Signal source resistance R_gkΩ

Frequency

KHz

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