CNB1009R [PANASONIC]
暂无描述;
| 型号： | CNB1009R |
| 厂家： | 
PANASONIC |
| 描述： | 暂无描述 光电 传感器 |
| 文件： | 总2页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Reflective Photosensors (Photo Reflectors)
CNB1009
Reflective Photosensor
Overview
Unit : mm
CNB1009 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si phototransistor
is used as the light detecting element. The two elements are located
parallel in the same direction and objects are detected when passing
in front of the device.
12.0±0.3
2-ø2.3
1.0
(4.0)
(1.0)
1.0
19.0±0.3
2-9.5±0.2
ø2.2
Features
Fast response : tr, tf = 6 µs (typ.)
Small size, light weight
(15.5)
2
Applications
3
Detection of paper, film and cloth
Optical mark reading
Detection of coin and bill
Detection of position and edge
1
4
1
2
3
4
Start, end mark detection of magnetic tape
Pin connection
(Note) ( ) Dimension is reference
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC)
Forward current (DC)
Power dissipation
VR
IF
3
50
75
20
5
V
mA
mW
V
Input (Light
emitting diode)
*1
PD
Collector to emitter voltage VCEO
Emitter to collector voltage VECO
V
Output (Photo
transistor)
Collector current
IC
*2
30
100
mA
mW
˚C
*1
Input power derating ratio is
Collector power dissipation PC
1.0 mW/˚C at Ta ≥ 25˚C.
*2 Output power derating ratio is
Operating ambient temperature
Storage temperature
Topr –25 to +85
Temperature
Tstg –30 to +100 ˚C
1.34 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
VF
Conditions
min
typ
max
1.5
Unit
V
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
IF = 50mA
VR = 3V
1.2
Input
IR
10
µA
pF
µA
pF
µA
µs
characteristics
Ct
VR = 0V, f = 1MHz
50
Output characteristics Collector cutoff current
ICEO VCE = 10V
CC VCE = 10V, f= 1MHz
VCC = 10V, IF = 20mA, RL = 100Ω
tr*2 , tf*3 VCC = 10V, IC = 1mA, RL = 100Ω
0.2
Collector to emitter capacitance
5
500
6
*1
Collector current
Response time
IC
100
Transfer
characteristics
Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA
*2
0.3
V
*1
Transfer characteristics measurement circuit
(Ambient light is shut off completely)
Time required for the collector current to increase from
10% to 90% of its final value.
VCC
IC
*3
Time required for the collector
IF
90%
10%
current to decrease from 90%
to 10% of its initial value.
d = 5 mm
tr
tf
RL
Standard white paper (Reflective ratio 90%)
1
Reflective Photosensors (Photo Reflectors)
CNB1009
IF , IC — Ta
IF — VF
VF — Ta
60
50
40
30
20
10
0
60
50
40
30
20
10
0
1.6
1.2
0.8
0.4
0
Ta = 25˚C
IF
IF = 50mA
10mA
1mA
IC
– 25
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2.0
2.4
– 40 – 20
0
20
40
60
80 100
Ambient temperature Ta (˚C )
Forward voltage VF (V)
Ambient temperature Ta (˚C )
IC — IF
IC — VCE
IC — Ta
10 2
10
10 2
10
160
120
80
40
0
VCC = 5V
Ta = 25˚C
RL = 100Ω
Ta = 25˚C
VCC = 10V
IF = 20mA
RL = 100Ω
IF = 30mA
20mA
1
1
10mA
10 –1
10 –1
10 –2
10 –1
10 –2
10 –1
1
10
10 2
1
10
10 2
– 40 – 20
0
20
40
60
80 100
Forward current IF (mA)
Collector to emitter voltage VCE (V)
Ambient temperature Ta (˚C )
I
CEO — Ta
tr — IC
IC — d
10
1
10 3
10 2
800
600
400
200
0
VCC = 10V
Ta = 25˚C
VCE = 10V
V
CC = 10V
Ta = 25˚C
RL = 100Ω
IF = 20mA
RL = 1kΩ
d
10 –1
10 –2
10 –3
10
1
500Ω
100Ω
10 –1
– 40 – 20
0
20
40
60
80 100
10 –2
10 –1
Collector current IC (mA)
1
10
0
4
8
12
16
Ambient temperature Ta (˚C )
Distance d (mm)
2
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