关闭背景特效

DE2705600L [PANASONIC]

Zener Diode, 5.6V V(Z), 5%, 0.12W, Silicon, Unidirectional, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI2-F4-B, SC-104A, 2 PIN;

DE2705600L


元器件型号：	DE2705600L
生产厂家：	PANASONIC SEMICONDUCTOR
描述和应用：	Zener Diode, 5.6V V(Z), 5%, 0.12W, Silicon, Unidirectional, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI2-F4-B, SC-104A, 2 PIN 测试光电二极管
PDF文件：	总5页 (文件大小：322K)
下载文档：	下载PDF数据表文档文件
型号参数：DE2705600L参数

DE2708200L

Zener Diode, 8.2V V(Z), 5%, 0.12W, Silicon, Unidirectional, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI2-F4-B, SC-104A, 2 PIN

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0 PANASONIC

DE275-101N30

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D2, 6 PIN

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1 IXYS

DE275-101N30-00

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 100V V(BR)DSS | 30A I(D)

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75 ETC

DE275-101N30A

RF Power MOSFET

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65 IXYS

DE275-101P12-00

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 100V V(BR)DSS | 12A I(D)

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21 ETC

DE275-102N05-00

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D)

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19 ETC

DE275-102N06A

RF Power MOSFET

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172 IXYS

DE275-201N25

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D2, 6 PIN

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0 IXYS

DE275-201N25-00

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 25A I(D)

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15 ETC

DE275-201N25A

RF Power MOSFET

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36 IXYS

DE275-201N25A

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

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0 IXYS

DE275-201P11-00

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 11A I(D)

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14 ETC

DE275-501N12-00

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 12A I(D)

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6 ETC

DE275-501N16

RF Power MOSFET

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20 IXYS

DE275-501N16

RF Power MOSFET

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51 IXYS

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