DMA264040R [PANASONIC]

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, SC-74, 6 PIN;


型号：	DMA264040R
厂家：	PANASONIC
描述：	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MINI6-G4-B, SC-74, 6 PIN 开关光电二极管晶体管
文件：	总4页 (文件大小：655K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMA26404

Silicon PNP epitaxial planar type

For digital circuits

Unit: mm

 Features

 Low collector-emitter saturation voltage V_CE(sat)

 Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

ꢀMarking Symbol: J3

ꢀBasic Part Number

Dual DRA2114Y (Individual)

1: Emitter (Tr1)

2: Base (Tr1)

3: Collector (Tr2)

Panasonic

4: Emitter (Tr2)

 Packaging

5: Base (Tr2)

6: Collector (Tr1)

Mini6-G4-B

SC-74

DMA264040R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)

ꢀAbsolute Maximum Ratings T_a= 25°C

JEITA

Code

SOT-457

Parameter

Symbol

V_CBO

V_CEO

I_C

Rating

–50

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector current

(C1) (B2) (E2)

Tr1

Tr2

–50

–100

°C

R₁

R₂

Tr1

Total power dissipation

P_T

300

Tr2

R₁

R₂

Junction temperature

T_j

150

Overall

Operating ambient temperature

Storage temperature

T_opr

–40 to +85

–55 to +150

°C

(E1) (B1) (C2)

stg

°C

R₁

kΩ

Resistance value

R₂

ꢀElectrical Characteristics T_a= 25°C±3°C

Parameter

Symbol

Conditions

Min

–50

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Input voltage (ON)

V_CBOI_C= –10 µA, I_E= 0

V_CEOI_C= –2 mA, I_B= 0

I_CBO

I_CEO

I_EBO

h_FE

V_CB= –50 V, I_E= 0

V_CE= –50 V, I_B= 0

V_EB= –6 V, I_C= 0

– 0.1

– 0.5

– 0.2

µA



V_CE= –10 V, I_C= –5 mA

V_CE(sat)I_C= –10 mA, I_B= – 0.5 mA

V_I(on)V_CE= – 0.2 V, I_C= –5 mA

– 0.25

–1.7

Input voltage (OFF)

V_I(off)V_CE= –5 V, I_C= –100 µA

– 0.5

+30%

0.25

Input resistance

R₁

–30%

0.17

kΩ



Resistance ratio

R₁/ R₂

0.21

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: September 2013

Ver. EED

DMA26404

P_T T

I_C V_CE

h_FE I_C

350

300

−120

−100

−80

−60

−40

−20

300

250

200

150

100

_CE= −10 V

T_a= 25°C

_B= −600 µA

T_a= 85°C

250

200

150

100

−500 µA

−400 µA

25°C

−40°C

−300 µA

−200 µA

−100 µA

120

160

200

−2

−4

−6

−8 −10 −12

− 0.1

−1

−10

−100

(

)

Ambient temperature T_a°C

Collector-emitter voltage V_CE(V)

Collector current I_C(mA)

V_CE(sat) I_C

I_O V_IN

V_IN I_O

−10

−1

−100

−10

−1

I_C/ I_B= 20

V_O= −5 V

_O= − 0.2 V

T_a= 85°C

25°C

−10⁻¹

−10⁻²

−10⁻³

T_a= −40°C

25°C

T_a= 85°C

25°C

−1

− 0.1

85°C

−40°C

− 0.1

− 0.01

− 0.5

−1.0

−1.5

−2.0

− 0.1

−1

−10

−100

− 0.1

−1

−10

−100

Output current I_O(mA)

Collector current I_C(mA)

(V)

Input voltage V_IN

Ver. EED

DMA26404

Unit: mm

Mini6-G4-B

 Land Pattern (Reference) (Unit: mm)

Ver. EED

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any

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Consult our sales staff in advance for information on the following applications:

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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

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(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

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