DRA3144V0L [PANASONIC]

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN;
DRA3144V0L
型号: DRA3144V0L
厂家: PANASONIC    PANASONIC
描述:

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN

开关 光电二极管 晶体管
文件: 总4页 (文件大小:463K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Doc No. TT4-EA-11683  
Revision. 2  
Transistors with Built-in Resistor  
DRA3144V0L  
DRA3144V0L  
Silicon PNP epitaxial planar type  
Unit: mm  
For digital circuits  
Complementary to DRC3144V  
DRA9144V in SSSMini3 type package  
1.2  
0.3  
0.13  
3
Features  
Low collector-emitter saturation voltage Vce(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  
1
2
0.2  
0.52  
Marking Symbol:  
Packaging  
LJ  
(0.4) (0.4)  
0.8  
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)  
1. Base  
2. Emitter  
3. Collector  
Panasonic  
JEITA  
SSSMini3-F2-B  
SC-105AA  
Absolute Maximum Ratings Ta = 25 C  
Code  
SOT-723  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Total power dissipation  
Junction temperature  
Symbol  
VCBO  
VCEO  
IC  
PT  
Tj  
Topr  
Tstg  
Rating  
-50  
-50  
-100  
100  
Unit  
V
V
mA  
mW  
°C  
Internal Connection  
C
R1  
B
150  
-40 to +85  
-55 to +150  
R2  
Operating ambient temperature  
Storage temperature  
°C  
°C  
E
k  
k  
Resistance R1  
R2  
47  
10  
value  
Electrical Characteristics Ta = 25 C 3 C  
Parameter  
Symbol  
VCBO IC = -10 μA, IE = 0  
VCEO IC = -2 mA, IB = 0  
Conditions  
Min Typ Max  
-50  
-50  
Unit  
V
V
μA  
μA  
mA  
-
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
ICBO  
ICEO  
IEBO  
hFE  
VCB = -50 V, IE = 0  
VCE = -50 V, IB = 0  
VEB = -6 V, IC = 0  
-0.1  
-0.5  
-0.2  
VCE = -10 V, IC = -5 mA  
30  
Collector-emitter saturation voltage  
VCE(sat) IC = -10 mA, IB = -0.5 mA  
-0.25  
V
Vi(on) VCE = -0.2 V, IC = -5 mA  
Vi(off) VCE = -5 V, IC = -100 μA  
-6.3  
V
V
Input voltage  
-1.9  
k  
-
Input resistance  
Resistance ratio  
R1  
R1/R2  
-30% 47 +30%  
3.7  
4.7  
5.7  
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.  
Note)1.  
Page 1 of 3  
Established : 2009-10-23  
Revised : 2014-02-18  
Doc No. TT4-EA-11683  
Revision. 2  
Transistors with Built-in Resistor  
DRA3144V0L  
Technical Data ( reference )  
PT - Ta  
IC - VCE  
125  
100  
75  
50  
25  
0
-0.12  
Ta = 25 ℃  
IB = -600 μA  
-0.1  
-0.08  
-0.06  
-0.04  
-0.02  
-0  
-500 μA  
-400 μA  
-300 μA  
-200 μA  
-100 μA  
0
20 40 60 80 100 120 140 160 180 200  
-0  
-2  
-4  
-6  
-8  
-10  
-12  
Ambient temperature Ta ()  
Collector-emitter voltage VCE (V)  
hFE - IC  
VCE(sat) - IC  
-10  
-1  
200  
150  
100  
50  
IC/IB = 20  
VCE = -10 V  
Ta = 85 ℃  
25 ℃  
Ta = 85 ℃  
25 ℃  
-40 ℃  
-0.1  
-0.01  
-40 ℃  
0
-0.0001  
-0.001  
-0.01  
-0.1  
-0.0001  
-0.001  
Collector current IC (A)  
-0.01  
-0.1  
Collector current IC (A)  
Io - VIN  
VIN - Io  
-1.0E-02  
-1.0E-03  
-1.0E-04  
-1.0E-05  
-1.0E-06  
-100  
-10  
-1  
Vo = -5 V  
Vo = -0.2 V  
Ta = 85 ℃  
25 ℃  
25 ℃  
Ta = -40 ℃  
-40 ℃  
85 ℃  
-0.1  
-0  
-1  
-2  
-3  
-4  
-5  
-0.0001  
-0.001  
-0.01  
-0.1  
Input voltage VIN (V)  
Output current Io (A)  
Page 2 of 3  
Established : 2009-10-23  
Revised : 2014-02-18  
Doc No. TT4-EA-11683  
Revision. 2  
Transistors with Built-in Resistor  
DRA3144V0L  
SSSMini3-F2-B  
Unit: mm  
1.20±0.05  
0.30+-0.052  
0.13+-0.052  
3
1
2
0.20+-0.052  
(0.4) (0.4)  
0.80±0.05  
(5°)  
Land Pattern (Reference) (Unit: mm)  
0.45  
0.35  
0.35  
0.4  
0.4  
Page 3 of 3  
Established : 2009-10-23  
Revised : 2014-02-18  
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any  
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any  
other company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications  
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,  
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of  
the products may directly jeopardize life or harm the human body.  
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with  
your using the products described in this book for any special application, unless our company agrees to your using the products in  
this book for any special application.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.  
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.  
20100202  

相关型号:

DRA3A13Z

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN
PANASONIC

DRA3A14Y

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN
PANASONIC

DRA3A14Y0L

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE, SSSMINI3-F2-B, 3 PIN
PANASONIC

DRA3A23J0L

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE, SSSMINI3-F2-B, 3 PIN
PANASONIC

DRA3A23Y

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN
PANASONIC

DRA3A23Y0L

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE, SSSMINI3-F2-B, 3 PIN
PANASONIC

DRA3A24E

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN
PANASONIC

DRA3A43T

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN
PANASONIC

DRA3A43X

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN
PANASONIC

DRA3A43Z

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN
PANASONIC

DRA3A43Z0L

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE, SSSMINI3-F2-B, 3 PIN
PANASONIC

DRA3A44E

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN
PANASONIC