DRC3A15E [PANASONIC]

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN;


型号：	DRC3A15E
厂家：	PANASONIC
描述：	Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN 开关光电二极管晶体管
文件：	总3页 (文件大小：301K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

This product complies with the RoHS Directive (EU 2002/95/EC).

DRC3A15E

Silicon NPN epitaxial planar type

For digital circuits

Complementary to DRA3A15E

DRC9A15E in SSSMini3 type package

 Features

ꢀPackage

 Low collector-emitter saturation voltage V_CE(sat)

 Contributes to miniaturization of sets, reduction of component count.

 Eco-friendly Halogen-free package

ꢀCode

SSSMini3-F2-B

ꢀPin Name

1: Base

 Packaging

2: Emitter

3: Collector

Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)

ꢀMarking Symbol: JZ

ꢀInternal Connection

ꢀAbsolute Maximum Ratings T = 25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector current

Symbol

V_CBO

V_CEO

I_C

Rating

Unit

R₁

R₂

°C

Total power dissipation

P_T

100

R₁

R₂

100 kΩ

Resistance value

Junction temperature

T_j

150

Storage temperature

stg

–55 to +150

°C

ꢀElectrical Characteristics T = 25°C±3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Input voltage (ON)

V_CBOI_C= 10 µA, I_E= 0

V_CEOI_C= 2 mA, I_B= 0

I_CBO

I_CEO

I_EBO

h_FE

V_CB= 50 V, I_E= 0

V_CE= 50 V, I_B= 0

V_EB= 6 V, I_C= 0

0.1

0.5

0.1

µA



V_CE= 10 V, I_C= 5 mA

V_CE(sat)I_C= 10 mA, I_B= 0.5 mA

V_I(on)V_CE= 0.2 V, I_C= 5 mA

0.25

5.7

Input voltage (OFF)

V_I(off)V_CE= 5 V, I_C= 100 µA

0.8

+30%

1.2

Input resistance

R₁

–30%

0.8

100

1.0

kΩ



Resistance ratio

R₁/ R₂

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: April 2011

Ver. AED

This product complies with the RoHS Directive (EU 2002/95/EC).

DRC3A15E

SSSMini3-F2-B

Unit: mm

1.20 ±0.05

0.30 ⁺−0⁰.^.0⁰2⁵

0.13 ⁺−0⁰.^.0⁰2⁵

0.20 ⁺−0⁰.^.0⁰2⁵

(0.4)

0.80 ±0.05

(5°)

Ver. AED

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