DSC5002R0L [PANASONIC]

Silicon NPN epitaxial planar type;


型号：	DSC5002R0L
厂家：	PANASONIC
描述：	Silicon NPN epitaxial planar type
文件：	总5页 (文件大小：794K)
中文：	中文翻译
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DSC5002

Silicon NPN epitaxial planar type

For general ampliﬁcation

Complementary to DSA5002

DSC2002 in SMini3 type package

Unit: mm

 Features

 High forward current transfer ratio h_FEwith excellent linearity

 Low collector-emitter saturation voltage V_CE(sat)

 Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

 Marking Symbol: C2

 Packaging

DSC5002×0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)

 Absolute Maximum Ratings T_a= 25°C

1: Base

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

2: Emitter

3: Collector

Panasonic

JEITA

SMini3-F2-B

SC-85

500

Code



Peak collector current

I_CP

Collector power dissipation

Junction temperature

P_C

150

°C

T_j

150

Operating ambient temperature

Storage temperature

T_opr

–40 to +85

–55 to +150

stg

 Electrical Characteristics T_a= 25°C±3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

V_CBOI_C= 10 mA, I_E= 0

V_CEOI_C= 2 mA, I_B= 0

V_EBOI_E= 10 mA, I_C= 0

I_CBO

V_CB= 20 V, I_E= 0

0.1

h_FE1

h_FE2

V_CE= 10 V, I_C= 150 mA

V_CE= 10 V, I_C= 500 mA

120

340

Forward current transfer ratio ^*



Collector-emitter saturation voltage ^*

V_CE(sat)I_C= 300 mA, I_B= 30 mA

0.1

0.6

Transition frequency

f_T

V_CE= 10 V, I_C= 50 mA

160

MHz

Collector output capacitance

(Common base, input open circuited)

C_ob

V_CB= 10 V, I_E= 0, f = 1 MHz

4.8

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. 1: Pulse measurement

2: Rank classiﬁcation

Code

Rank

No-rank

120 to 340

h_FE1

120 to 240

C2R

170 to 340

C2S

Marking Symbol

Product of no-rank is not classiﬁed and have no marking symbol for rank.

Publication date: March 2014

Ver. EED

DSC5002

P_C T

I_C V_CE

h_FE I_C

350

300

250

200

_CE= 10 V

T_a= 25°C

_B= 3.0 mA

2.7 mA

2.4 mA

2.1 mA

T_a= 85°C

25°C

1.8 mA

1.5 mA

150

100

200

150

100

−40°C

1.2 mA

0.9 mA

0.6 mA

0.3 mA

10²

10³

120

160

200

(

)

Ambient temperature T_a°C

Collector-emitter voltage V_CE(V)

Collector current I_C(mA)

V_CE(sat) I_C

I_C V_BE

C_ob V_CB

_C/ I_B= 10

I_E= 0

_CE= 10 V

f = 1 MHz

T_a= 25°C

25°C

T_a= 85°C

−40°C

T_a= 85°C

10⁻¹

25°C

−40°C

10⁻²

10²

10³

0.2 0.4 0.6 0.8 1.0 1.2

Base-emitter voltage V_BE(V)

100

Collector current I_C(mA)

Collector-base voltage V_CB(V)

f_T I_C

250

V_CE= 10 V

T_a= 25°C

200

150

100

0.1

100

Collector current I_C(mA)

Ver. EED

DSC5002

Unit: mm

SMini3-F2-B

 Land Pattern (Reference) (Unit: mm)

Ver. EED

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

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(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

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defect which may arise later in your equipment.

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mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

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20100202

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