DSC9G02C0L [PANASONIC]
Silicon NPN epitaxial planar type; NPN硅外延平面型
| 型号： | DSC9G02C0L |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planar type |
| 文件： | 总4页 (文件大小：383K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSC9G02
Silicon NPN epitaxial planar type
For high-frequency amplification
DSC5G02 in SSMini3 type package
Features
Package
ꢀCode
High forward current transfer ratio hFE with excellent linearity
High transition frequency fT
SSMini3-F3-B
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
ꢀPin Name
1. Base
2. Emitter
3. Collector
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: C5
Absolute Maximum Ratings Ta = 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
30
20
V
3
15
V
mA
mW
°C
°C
Collector power dissipation
Junction temperature
PC
125
Tj
150
Storage temperature
T
stg
–55 to +150
Electrical Characteristics Ta = 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Symbol
Conditions
Min
30
3
Typ
Max
Unit
V
VCBO IC = 10 mA, IE = 0
VEBO IE = 10 mA, IC = 0
V
VBE
hFE
fT
VCE = 6 V, IC = 1 mA
VCE = 6 V, IC = 1 mA
VCE = 6 V, IC = 1 mA
0.72
V
Forward current transfer ratio *
Transition frequency
65
260
450
650
0.6
MHz
Reverse transfer capacitance
(Common emitter)
Cre
VCE = 6 V, IC = 1 mA, f = 10.7 MHz
pF
Power gain
PG
NF
VCE = 6 V, IC = 1 mA, f = 100 MHz
VCE = 6 V, IC = 1 mA, f = 100 MHz
24
dB
dB
Noise figure
3.3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Code
Rank
C
C
D
D
0
No-rank
65 to 260
C5
hFE
65 to 160
C5C
100 to 260
C5D
Marking Symbol
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: September 2010
Ver. AED
1
DSC9G02
PC T
IC VCE
hFE IC
a
200
150
125
100
75
20
16
V
CE = 6 V
Ta = 25°C
160
120
80
Ta = 85°C
I
B = 120 µA
110 µA
100 µA
90 µA
80 µA
70 µA
60 µA
50 µA
40 µA
30 µA
25°C
12
8
−30°C
50
4
40
25
0
0
0
0
10−1
1
10
102
40
80
120
160
200
0
2
4
6
8
10
12
(
)
Ambient temperature Ta °C
Collector current IC (mA)
Collector-emitter voltage VCE (V)
VCE(sat) IC
IC VBE
Cob VCB
10
1
2.0
20
15
10
5
IC / IB = 10
IE = 0
f = 1 MHz
V
CE = 6 V
Ta = 25°C
25°C
1.6
1.2
0.8
0.4
0
Ta = 85°C
−30°C
Ta = 85°C
−30°C
25°C
10−1
10−2
10−1
0
1
10
102
1
10
100
0
0.2 0.4 0.6 0.8 1.0 1.2
Collector current IC (mA)
Collector-base voltage VCB (V)
Base-emitter voltage VBE (V)
fT IC
1600
1200
800
400
0
VCE = 6 V
Ta = 25°C
10−1
1
10
102
Collector current IC (mA)
Ver. AED
2
DSC9G02
SSMini3-F3-B
Unit: mm
1.60 +−00..0035
0.26 +−00..0025
3
1
2
0.13 +−00..0025
(0.50)
(0.50)
1.00 ±0.05
(5°)
Ver. AED
3
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semiconductors described in this book
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20100202
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