FK3906010L [PANASONIC]

Small Signal Field-Effect Transistor, 0.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN;


型号：	FK3906010L
厂家：	PANASONIC
描述：	Small Signal Field-Effect Transistor, 0.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN 开关光电二极管晶体管
文件：	总6页 (文件大小：356K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Doc No. TT4-EA-12654

Revision. 3

Product Standards

MOS FET

FK3906010L

Silicon N-channel MOSFET

Unit : mm

For switching

1.6

FK350601 in SSMini3 type package

0.26

0.13

 Features

 Low drive voltage : 2.5 V drive

 Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)

 Marking Symbol :

 Packaging

0.7

(0.5)(0.5)

1.0

Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)

Gate

Source

Drain

 Absolute Maximum Ratings Ta = 25C

Panasonic

JEITA

SSMini3-F3-B

SC-89

SOT-490

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Symbol

VDS

VGS

Rating

12

100

200

Unit

C

Code

Pulse drain current

IDp

Tch

Topr

Tstg

Internal Connection

Total power dissipation

Channel temperature

Operating ambient temperature

Storage temperature

125

150

-40 to + 85

-55 to +150

(D)

C

(G)

(S)

Pin Name

Gate

Source

Drain

Page 1 of 5

Established : 2010-06-30

Revised

: 2013-08-28

Doc No. TT4-EA-12654

Revision. 3

Product Standards

MOS FET

FK3906010L

 Electrical Characteristics Ta = 25C  3C

Parameter

Drain-source breakdown voltage

Drain-source cutoff current

Gate-source cutoff current

Gate threshold voltage

Symbol

VDSS ID = 1 mA, VGS = 0

IDSS

IGSS

VTH

Conditions

Min Typ Max

Unit

A



0.9

VDS = 60 V, VGS = 0

1.0

10

1.5

VGS = 10 V, VDS = 0

ID = 1.0 A, VDS = 3.0 V

ID = 10 mA, VGS = 2.5 V

ID = 10 mA, VGS = 4.0 V

ID = 10 mA, VDS = 3.0 V

1.2

Drain-source ON resistance

RDS(on)

Forward transfer admittance

Input capacitance

Output capacitance

|Yfs|

Ciss

Coss

Crss

VDS = 3 V, VGS = 0, f = 1 MHz

Reverse transfer capacitance

VDD = 3 V, VGS = 0 to 3 V,

ID = 10 mA

VDD = 3 V, VGS = 3 to 0 V,

ID = 10 mA

Turn-on time ^*1

ton

toff

100

Turn-off time ^*1

Note) 1.

Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.

*1 Turn-on and Turn-off test circuit

VDD=3V

ID=10mA

RL=300Ω

90%

Vout

10%

V GS

V out

Vin

VGS=0～3V

10%

50Ω

90%

ton

toff

Page 2 of 5

Established : 2010-06-30

Revised : 2013-08-28

Doc No. TT4-EA-12654

Revision. 3

Product Standards

MOS FET

FK3906010L

ID - VDS

ID - VGS

0.1

0.05

0.1

0.05

2.5 V

4.0 V

Ta = 85 ℃

VGS = 1.5 V

25 ℃

2.0 V

0.6

-40 ℃

0.2

0.4

0.8

1.2

Drain-source Voltage VDS (V)

Gate-source voltage VGS (V)

VDS - VGS

RDS(on) - ID

0.3

0.25

0.2

2.5 V

ID = 20.0 mA

VGS = 4.0 V

0.15

0.1

5.0 mA

10.0 mA

0.05

100

Gate-source Voltage VGS (V)

Drain Current ID (mA)

Capacitance - VDS

100

Ciss

Coss

Crss

0.1

100

Drain-source Voltage VDS (V)

Page 3 of 5

Established : 2010-06-30

Revised : 2013-08-28

Doc No. TT4-EA-12654

Revision. 3

Product Standards

MOS FET

FK3906010L

Vth - Ta

RDS(on) - Ta

2.5

VGS = 2.5V

1.5

4.0 V

0.5

-50

100

150

-50

100

150

Temperature (℃)

PD - Ta

0.15

0.1

0.05

100

150

Temperature Ta (C)

Rth -tsw

Safe Operating Area

1000

100

IDp = 0.2 A

0.1

1 ms

10 ms

100 ms

0.01

0.001

0.0001

1 s

Operation in this area

is limited by RDS(on)

Ta=25℃,

Glass epoxy board (25.4×25.4×t0.8mm)

coated with copper foil, which has more than

0.01

0.1

100

1000

0.01

0.1

100

Drain-source Voltage VDS (V)

Pulse Width tsw (s)

Page 4 of 5

Established : 2010-06-30

Revised : 2013-08-28

Doc No. TT4-EA-12654

Revision. 3

Product Standards

MOS FET

FK3906010L

SSMini3-F3-B

Unit : mm

1.60^+-0.05³

0.26^+-0.05²

0.13^+-0.05²

(0.5) (0.5)

1.00±0.05

(5°)

 Land Pattern (Reference) (Unit : mm)

0.6

1.0

Page 5 of 5

Established : 2010-06-30

Revised

: 2013-08-28

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any

other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any

other company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for general applications (such as office equipment, communications

equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.

Consult our sales staff in advance for information on the following applications:

– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,

life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of

the products may directly jeopardize life or harm the human body.

It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with

your using the products described in this book for any special application, unless our company agrees to your using the products in

this book for any special application.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.

20100202

相关型号：