GN1010R [PANASONIC]
RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINII4-G2, 4 PIN;
| 型号： | GN1010R |
| 厂家： | 
PANASONIC |
| 描述： | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINII4-G2, 4 PIN 晶体 小信号场效应晶体管 射频小信号场效应晶体管 光电二极管 放大器 |
| 文件： | 总2页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs MMICs
GN1010
GaAs N-Channel MES IC
Unit : mm
2.8–+00..32
1.5–+00..32
For high-output high-gain amplification
0.65±0.15
0.65±0.15
■ Features
0.5R
●
●
●
General-use wide-band amplifier
4
3
1
2
Low noise
With bandwidth control pin
■ Absolute Maximum Ratings (Ta = 25˚C)
0.4±0.2
Parameter
Symbol
VDS
VGS
ID
Rating
Unit
V
1 : Source
2 : Drain
3 : C
6
Power supply voltage
– 4
V
4 : Gate
Mini Type Package (4-pin)
Drain current
45
mA
mA
mW
˚C
Gate current
IG
3
200
■ Equivalent Circuit
Allowable power dissipation
Channel temperature
Storage temperature
PD
2
Tch
150
3
4
Tstg
– 55 to +150
˚C
1
■ Electrical Characteristics (Ta = 25˚C)
Parameter
Drain current
Symbol
Condition
Min
5
Typ
30
Max
45
Unit
mA
* 1
IDD
VDS= 3V
VDS= 3V, f= 0.5GHz
VDS= 3V, f=1.8GHz
VDS= 3V, f= 0.5GHz
VDS= 3V, f=1.8GHz
VDS= 3V, f= 0.5GHz
VDS= 3V, f=1.8GHz
Noise figure
Power gain
NF * 2
PG * 2
2
3
dB
dB
10
9
5
8
* 2
I
dB compression output
PO
15
dBm
* 1
I
DD
rank classification
* 2 NF, PG, PO test circuit
V
D
C = 1000 pF
Cc = 200 pF
Rank
P
Q
R
IDD(mA)
5 to 20
15 to 30
25 to 45
C
C = 27 pF
f
Cc
C
C
f
G
Cc
S
GaAs MMICs
GN1010
PG, NF – f
| S21 |, | S12 | – f
| S11 |, | S22 | – f
12
10
8
30
20
20
10
VDD=3V
Ta=25˚C
VDD=3V
Ta=25˚C
VDD=3V
Ta=25˚C
PG
| S21
|
10
0
| S22
|
6
0
–10
–20
–30
–40
NF
4
–10
–20
–30
| S11
|
| S12
|
2
0
0.1
0.3
1
3
10
10
30
100 300 1000 3000 10000
10
30
100 300 1000 3000 10000
(
)
(
)
(
)
Frequency
f
GHz
Frequency
f
MHz
Frequency
f
MHz
NF, PG – f
Pout, IM2, IM3 – Pin
20
40
20
VDD=3V
C =27pF
VDD=3V
C =27pF
f
f
I.P
3
2
1
0
PG
NF
0
10
Pout
–20
–40
–60
–80
IM3
IM2
0
0.1
0.3
0.5
1.0
2.0
(
)
Frequency
f
GHz
–90MHz
–500MHz
–1800MHz
–40
–20
0
20
(
)
Pin dBm
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