GRM32ER71E226KE15L_技术文档

NN30312A

VIN = 4.5 V to 30 V, 10 A

Synchronous DC-DC Step down Regulator

comprising of Controller IC and Power MOSFET

FEATURES

DESCRIPTION

NN30312A is a synchronous DC-DC Step down

Regulator (1-ch) comprising of a Controller IC and two

power MOSFETs and employs the hysteretic control

system.

z High-Speed Response DC-DC Step Down Regulator

Circuit that employs Hysteretic Control System

z Two 11 mΩ (Typ.)

MOSFETs for High Efficiency at 10 A

z SKIP (discontinuous) Mode for Light Load Efficiency

z Up to 10 A Output Current

By this system, when load current changes suddenly, it

responds at high speed and minimizes the changes of

output voltage.

Since it is possible to use capacitors with small

capacitance and it is unnecessary to add external parts

for system phase compensation, this IC realizes

downsizing of set and reducing in the number of external

parts. Output voltage is adjustable by user.

z Input VoltageRange : AVIN : 4.5 V to 30 V,

PVIN : 4.5 V to 30 V,

Output Voltage Range : 0.75 V to 5.5 V

Selectable Switching Frequency 250 kHz , 750 kHz ,

1250 kHz

Maximum current is 10 A.

z Adjustable Soft Start

z Low Operating and Standby Quiescent Current

APPLICATIONS

z Open Drain Power Good Indication for Output Over ,

Under Voltage

High Current Distributed Power Systems such as

・HDDs (Hard Disk Drives)

・SSDs (Solid State Drives)

・PCs

z Built-in Under Voltage Lockout (UVLO),

Thermal Shut Down (TSD),

Over Voltage Detection (OVD),

Under Voltage Detection (UVD),

Over Current Protection (OCP),

Short Circuit Protection (SCP)

・Game consoles

・Servers

・Security Cameras

・Network TVs

z HQFN040-A3-0606B ( Size : 6 mm X 6 mm, 0.5 mm

pitch ), 40pin Plastic Quad Flat Non-leaded Package

Heat Slug Down (QFN Type)

・Home Appliances

・OA Equipment etc.

SIMPLIFIED APPLICATION

EFFICIENCY CURVE

VREG

Frequency = 250 kHz

100

90

80

70

60

50

40

30

20

10

0

PVIN

EN

PVIN

100k Ω

PGOOD

BST

VOUT

AVIN

FCCM/ Vo= 1.05V

FCCM/ Vo= 1.2V

FCCM/ Vo= 1.8V

FCCM/ Vo= 3.3V

FCCM/ Vo= 5.0V

SKIP/ Vo= 1.05V

SKIP/ Vo= 1.2V

SKIP/ Vo= 1.8V

SKIP/ Vo= 3.3V

SKIP/ Vo= 5.0V

0.1μF

4.7μH

NN30312A

DCDCOUT

1.05 V

LX

1.5k Ω

1k Ω

22μF x 3

VFB

VREG

SS

AGND PGND

10nF

1μF

Notes) This application circuit is an example. The operation

of mass production set is not guaranteed. You should

perform enough evaluation and verification on the

design of mass production set. You are fully

responsible for the incorporation of the above

application circuit and information in the design of

your equipment.

IOUT (A)

Condition )

_IN= 12 V, Vout = 1.05 V , 1.2 V , 1.8V , 3.3V , 5.0 V,

L = 4.7 µH, Cout = 66 µF ( 22 µF x 3 ), Frequency = 250 kHz

V

Ver. CEB

Publication date: October 2012

1

NN30312A

ABSOLUTE MAXIMUM RATINGS

Parameter

Supply voltage

Symbol

V_IN

Rating

33

Unit

V

Notes

*1

Operating free-air temperature

Operating junction temperature

Storage temperature

T_opr

T_j

– 40 to + 85

– 40 to + 150

– 55 to + 150

°C

*2

T_stg

*2

*1

*3

MODE,FSEL,VOUT,VFB,

– 0.3 to (VREG + 0.3)

-0.3 to 6.0

V

Input Voltage Range

EN

*1

*3

PGOOD

– 0.3 to (VREG + 0.3)

Output Voltage Range

ESD

*1

*4

LX

– 0.3 to ( V_IN+ 0.3 )

2

V

HBM (Human Body Model)

kV

—

Notes) Do not apply external currents and voltages to any pin not specifically mentioned.

This product may sustain permanent damage if subjected to conditions higher than the above stated absolute maximum rating.

This rating is the maximum rating and device operating at this range is not guaranteeable as it is higher than our stated

recommended operating range. When subjected under the absolute maximum rating for a long time, the reliability of the product

may be affected. V_INis voltage for AVIN, PVIN. AVIN = PVIN.

*1:The values under the condition not exceeding the above absolute maximum ratings and the power dissipation.

*2:Except for the power dissipation, operating ambient temperature, and storage temperature, all ratings are for Ta = 25 °C.

*3:(VREG + 0.3) V must not be exceeded 6 V.

*4:(V_IN+ 0.3) V must not be exceeded 33 V.

POWER DISSIPATION RATING

PACKAGE

θ_JA

PD ( Ta = 25 °C)

PD ( Ta = 85 °C ) Notes

1.47 W *1

40pin Plastic Quad Flat Non-leaded Package

Heat Slug Down (QFN Type)

44.2 °C / W

2.82 W

Note). For the actual usage, please refer to the PD-Ta characteristics diagram in the package specification, follow the power supply

voltage, load and ambient temperature conditions to ensure that there is enough margin and the thermal design does not

exceed the allowable value.

*1:Glass Epoxy Substrate ( 4 Layers ) [ Glass-Epoxy: 50 X 50 X 0.8 t ( mm ) ]

Die Pad Exposed , Soldered.

CAUTION

Although this has limited built-in ESD protection circuit, but permanent damage may occur on it.

Therefore, proper ESD precautions are recommended to avoid electrostatic damage to the MOS gates

Ver. CEB

2

NN30312A

RECOMMENDED OPERATING CONDITIONS

Parameter

Pin Name

AVIN

Min.

4.5

Typ.

12

—

Max.

30

Unit Notes

V

—

*1

—

*1

*2

Supply voltage range

PVIN

4.5

30

MODE

FSEL

EN

– 0.3

VREG + 0.3

6.0

Input Voltage Range

Output Voltage Range

—

PGOOD

LX

—

VREG + 0.3

V_IN+ 0.3

—

Note) Do not apply external currents and voltages to any pin not specifically mentioned.

Voltage values, unless otherwise specified, are with respect to GND. GND is voltage for AGND, PGND. AGND = PGND

V_INis voltage for AVIN, PVIN. AVIN = PVIN.

The values under the condition not exceeding the above absolute maximum ratings and the power dissipation.

*1 : (VREG + 0.3) V must not be exceeded 6 V.

*2 : (V_IN+ 0.3) V must not be exceeded 33 V.

Ver. CEB

3

NN30312A

ELECRTRICAL CHARACTERISTICS

Co = 22 μF X 3 (Murata), Lo= 1 μH (TDK), VOUT Setting = 3.3 V, V_IN= AV_IN= PV_IN= 12 V,

Switching Frequency = 750 kHz, MODE = VREG (FCCM), T_a= 25 °C 2 °C unless otherwise noted.

Limits

Parameter

Symbol

Condition

Unit Note

Min

Typ

Max

Current Consumption

EN= 5 V, I_OUT= 0 A

RFB1 = 4.5 kΩ

RFB2 = 1.0 kΩ

MODE=GND

Consumption current at active

I^VDDACT

—

650

—

1000

2

μA

—

(Skip MODE)

Consumption current at standby

Logic Pin

I^VDDSTB

EN = 0 V

EN pin Low-level input voltage

EN pin High-level input voltage

EN pin leak current

V^ENL

V^ENH

—

1.5

—

0.3

5.0

V

—

ILEAKEN

EN = 5 V

6.25

12.5

μA

VREG

X 0.3

MODE pin Low-level input voltage

MODE pin High-level input voltage

VMODEL

—

V

—

VREG

X 0.7

V^MODEH

VREG

MODE pin leak current

ILEAKMODE MODE = 5 V

—

6.25

—

12.5

0.3

μA

—

FSEL pin Low-level input voltage

V^MODEL

V^MODEH

I^LEAKMD

—

V

VREG

– 0.3

FSEL pin High-level input voltage

—

VREG

25.0

V

—

FSEL pin leak current

VREG

FSEL = 5 V

—

15.0

μA

VREG output voltage

V^REGOUT

V^REGLINE

IVREG = – 20 mA

_IN= 12 V to 6 V

IVREG = – 20 mA

_IN= 4.5 V

5.1

—

5.5

—

5.9

V

—

V

VREG line regulation

200

mV

V

VREG drop out voltage

V^REGDO

4.11

—

V

—

IVREG = – 20 mA

Ver. CEB

4

NN30312A

ELECRTRICAL CHARACTERISTICS ( Continued )

Co = 22 μF X 3 (Murata), Lo= 1 μH (TDK), VOUT Setting = 3.3 V, V_IN= AV_IN= PV_IN= 12 V,

Switching Frequency = 750 kHz, MODE = VREG (FCCM), T_a= 25 °C 2 °C unless otherwise noted.

Limits

Parameter

Symbol

Condition

Unit Note

Min

Typ

Max

VFB Characteristics

VFB comparator threshold

Under Voltage Lock Out

UVLO start voltage 1

UVLO recover voltage 1

PGOOD

V^FBTS

—

0.594 0.600 0.606

V

—

VUVLODET V_IN= 5 V to 0 V

VUVLORMV V_IN= 0 V to 5 V

3.5

3.9

3.8

4.2

4.1

4.5

V

—

PGOOD Threshold 1

(VFB ratio for UVD detect)

PGOOD Hysteresis 1

(VFB ratio for UVD release)

PGOOD Threshold 2

V^THPG1

V^HYSPG1

V^THPG2

PGOOD : High to Low

77

3.5

107

85

5.0

115

93

6.5

123

%

—

PGOOD : Low to High

PGOOD : High to Low

(VFB ratio for OVD detect)

PGOOD Hysteresis 2

(VFB ratio for OVD release)

V^HYSPG2

RPG

PGOOD : Low to High

—

3.5

—

5.0

10

6.5

15

%

—

PGOOD ON resistance

Ω

Ver. CEB

5

NN30312A

ELECRTRICAL CHARACTERISTICS ( Continued )

Co = 22 μF X 3 (Murata), Lo= 1 μH (TDK), VOUT Setting = 3.3 V, V_IN= AV_IN= PV_IN= 12 V,

Switching Frequency = 750 kHz, MODE = VREG (FCCM), T_a= 25 °C 2 °C unless otherwise noted.

Limits

Parameter

Symbol

Condition

Unit Note

Min

Typ

Max

DC-DC

PVIN = 6V to 30 V

DC-DC line regulation

DC-DC load regulation

DD^REGIN

—

0.25

3.5

0.75 %/V

—

*1

I

_OUT= – 0.5 A

DDREGLD I_OUT= – 10 mA to – 10 A

—

%

I_OUT= – 10 mA

MODE=GND

(Skip MODE)

DC-DC efficiency 1

DD^EFF1

—

65

*1

DC-DC efficiency 2

DDEFF2

I

_OUT= – 5A

—

88

20

—

*1

mV

[p-p]

DC-DC output ripple voltage 1

DDVRPL1 I_OUT= – 10 mA

DDVRPL2 I_OUT= – 5A

mV

[p-p]

DC-DC output ripple voltage 2

DC-DC load transient response

—

20

—

*1

I_OUT= – 100 mA ↔ – 1.5

A

Vout = 1 V

Δt = 0.5 A / μs

DD^DVAC

mV

DC-DC High Side MOS ON

resistance

DD^RONH

DD^RONL

VGS = 5.5 V

—

11

22

mΩ

—

DC-DC Low Side MOS ON

resistance

MIN Input and output voltage

difference

DV

DV = PVIN – VOUT

—

2.5

—

V

*1

VFB Characteristics

VFB pin leak current 1

VFB pin leak current 2

ILEAKFB1

ILEAKFB2

VFB = 0 V

VFB = 6 V

– 1

—

1

μA

—

*1 ：Typical Value checked by design.

Ver. CEB

6

NN30312A

ELECRTRICAL CHARACTERISTICS ( Continued )

Co = 22 μF X 3 (Murata), Lo= 1 μH (TDK), VOUT Setting = 3.3 V, V_IN= AV_IN= PV_IN= 12 V,

Switching Frequency = 750 kHz, MODE = VREG (FCCM), T_a= 25 °C 2 °C unless otherwise noted.

Limits

Parameter

PROTECTION

Symbol

Condition

Unit Note

Min

Typ

Max

DC-DC output current limit

DDILMT

—

15.0

60

—

A

*1

—

DC-DC Output GND Short

Protection Threshold

DDSHPTH FB = 0.6 V to 0.0 V

50

70

%

Soft-Start Timing

SS Charge Current

ISSCHG

RSSDIS

V_SS= 0.3 V

EN = 0 V

– 4

—

– 2

5

—

μA

kΩ

—

SS Discharge Resistance (Shut-down)

Switching Frequency Adjustment

DC-DC Switching Frequency 1

DC-DC Switching Frequency 2

DC-DC Switching Frequency 3

10

DDFSW1

DDFSW2

DDFSW3

I_OUT= – 5 A

—

250

750

—

kHz *1

I

_OUT= – 5 A

I_OUT= – 5 A

1250

*1 ：Typical Value checked by design.

Ver. CEB

7

NN30312A

PIN CONFIGURATION

Top View

30 29 28 27

26 25 24 23 22 21

PGOOD

AGND

BST

20 AVIN

31

32

33

34

35

19

18

17

16

15

14

13

12

11

41

AGND

MODE

N.C

36

37

38

43

LX

42

PVIN

PGND

PVIN

39

40

1

2

3

4

5

6

7

8

9 10

PIN FUNCTIONS

Pin No. Pin name

Type

Description

1

2

3

4

LX

Output

Power MOSFET output pin

5

6

7

8

9

10

11

12

PGND

Ground

Ground pin for Power MOSFET

13

14

15

16

17

Notes) Concerning detail about pin description, please refer to OPERATION and APPLICATION INFORMATION section.

Ver. CEB

8

NN30312A

PIN FUNCTIONS ( Continued )

Pin No. Pin name

Type

Input

Description

18

19

20

21

22

23

24

25

26

27

MODE

AGND

AVIN

Skip / FCCM mode select pin

Ground pin

Ground

Power supply Power supply pin

N.C.

-

No connection pin (don’t use pin)

FSEL

EN

Input

Frequency selection pin

ON/OFF control pin

VREG

VFB

Output

Input

LDO output pin (Power supply for internal control circuit)

Comparator negative input pin

VOUT

SS

Input

Output voltage sense pin

28

29

30

31

32

33

34

35

36

37

38

39

40

41

42

43

Output

Soft start capacitor connect pin

N.C.

-

No connection pin (don’t use pin)

PGOOD

AGND

BST

Output

Ground

Output

-

Power good open drain pin

Ground pin

Supply input pin for high side FET gate driver

No connection pin (don’t use pin)

N.C.

PVIN

Power supply Power supply pin for Power MOSFET

AGND

PVIN

LX

Ground

Power supply Power supply pin for radiation of heat

Output Power MOSFET output pin for radiation of heat

Ground pin for radiation of heat

Notes) Concerning detail about pin description, please refer to OPERATION and APPLICATION INFORMATION section.

Ver. CEB

9

NN30312A

FUNCTIONAL BLOCK DIAGRAM

AVIN

20

SS

28

Soft-Start

31

SS

VBG

PGOOD

EN

BGR

VINT

24

25

27

VREG

ON / OFF

VREG

33

VREG : 5.5 V

BST

UVLO

SCP

OCP

TSD

35,36,37,38,39,40,42

PVIN

0.6 V + 15 %

VOUT

Fault

0.6 V – 15 %

HGATE

HPD

HGO

26

VFB

Soft-Start

0.6 V

1,2,3,4,5,6,7,8,43

LX

VREF

Ton

Aux

Timer

REF

Control

Logic

ON

CMP

LGATE

23

18

Toff

Timer + Comp

FSEL

LPD

LGO

Timer + Comp

VIN

Coast

PGND

FCCM

/ Skip

9,10,11,12,13,14,15,16,17

MODE

19,32,41

AGND

Notes) This block diagram is for explaining functions. Part of the block diagram may be omitted, or it may be simplified.

Ver. CEB

10

NN30312A

OPERATION

Note) The characteristics listed below are reference values derived from the design of the IC and are not guaranteed.

1. Protection

(1).Output Over-Current Protection (OCP) function

115 %

110 %

And Short-Circuit Protection (SCP) function

0.6 V

VFB

1) The Over Current Protection is activated at about 15

A (Typ.) During the OCP, the output voltage continues

to drop at the specified current.

90 %

85 %

2) The Short-Circuit Protection function is implemented

when the output voltage decreases and the VFB pin

reaches to about 60 % of the set voltage of 0.6 V.

1 ms

2)

1 ms

4)

1)

3)

3) The SCP operates intermittently at 2 ms-ON, 16 ms

OFF intervals.

PGOOD

Note: PGOOD Pin is pulled up to VREG pin

Figure : OVD and UVD Operation

Over Current Protection ( typ : 15 A )

10.5 A to 20.5 A

(3).Thermal Shut Down (TSD)

When the IC internal temperature becomes more than

about 130 °C, TSD operates and DCDC turns off.

1)

(Ground short

protection Detection

2. Pin Setting

2)

about 60% of Vout )

(1).Operating Mode Setting

3)

Pendency

characteristics

The IC can operate at two different modes : Skip mode

and Forced Continuous Conduction mode (FCCM).

Intermittent

operation area

In Skip mode, the IC is working under pulse skipping

mechanism to improve efficiency at light load condition.

about 2 A

In FCCM mode, the IC is working at fixed frequency to

avoid EMI issues.

Output current [A]

The Operating Mode can be set by MODE pin as follows.

Figure : OCP and SCP Operation

MODE pin

Low

Mode

Skip

(2).Over Voltage Detection (OVD) and Under Voltage

Detection (UVD)

1).The NMOS connected to the PGOOD pin turns ON

when the output voltage rises and the VFB pin voltage

reaches 115 % of its set voltage (0.6 V).

High

FCCM

(2).Switching Frequency Setting

2).After (1) above, the NMOS connected to the PGOOD

pin is turned OFF after 1 ms when the output voltage

drops and the VFB pin voltage reaches 110 % of its set

voltage (0.6 V).

The IC can operate at three different frequency : 1250

kHz, 750 kHz and 250 kHz.

The Switching Frequency can be set by FSEL pin as

follows.

3).The NMOS connected to the PGOOD pin turns ON

when the output voltage drops and the VFB pin

voltage reaches 85 % of its set voltage (0.6 V).

4).After (3) above, the NMOS connected to the PGOOD

pin is turned OFF after 1 ms when the output voltage

drops and the VFB pin voltage reaches 90 % of its set

voltage (0.6 V).

FSEL pin

Low

Frequency [kHz]

1250

250

High

Open

750

Ver. CEB

11

NN30312A

OPERATION ( Continued )

Note) The characteristics listed below are reference values derived from the design of the IC and are not guaranteed.

3. Output Voltage Setting

Because the voltage of FB pin is controlled by the

voltage of SS pin during start up, the voltage of FB

increase straightly to the regulation voltage (0.6 V)

together with the voltage of SS pin and keep the

regulation voltage after that. On the other hand, the

voltage of SS pin increase to about 2.8 V and keep the

voltage. The calculation of Soft Start Time is as follows.

The Output Voltage can be set by external resistance of

FB pin, and its calculation is as follows.

(VIN = 12 V, IOUT = 0 A, FCCM, Fsw = 750 kHz).

VOUT

RFB1

RFB2

VFB (0.6 V)

VOUT = ( 1 +

) × 0.6

0.6

Soft Start Time(sec) =

×Css

RFB2

2μ

When Css is set at 10 nF, soft-start time is

approximately 3ms.

Below resistors are recommended for following popular

output voltage.

VOUT [V]

5.0

RFB1 [Ω]

11.0 k

4.5 k

RFB2 [Ω]

1.5 k

EN

3.3

1.0 k

1.8

2.0 k

1.0 k

4.2 V

1.0

1.0 k

1.5 k

VREG

Note: RFB2 can be set to a maximum value of 10 kΩ.

A larger FBR2 value will be more susceptible

to noise.

UVLO

Soft Start Time (s)

VFB comparator threshold is adjusted to 1 %, but the

actual output voltage accuracy becomes more than

1 % due to the influence from the circuits other than VFB

comparator.

SS

0.6 V

In the case of VOUT setting = 3.3 V, the actual output

voltage accuracy becomes 2.5 %.

VFB

(VIN = 12 V, IOUT = 0 A, FCCM, Fsw = 750 kHz).

4. Soft Start Setting

VOUT

Soft Start function maintains the smooth control of the

output voltage during start up by adjusting soft start

time. When the EN pin becomes High, the current (2

µA) begin to charge toward the external capacitor

(Css) of SS pin, and the voltage of SS pin increases

straightly.

Figure : Soft Start Operation

Ver. CEB

12

NN30312A

OPERATION ( Continued )

Note) The characteristics listed below are reference values derived from the design of the IC and are not guaranteed.

5. Start-up / Shut-down Settings

6. Power ON / OFF sequence

The Start-up / Shut-down is enabled by the EN pin.

The EN pin can be set by either applying voltage from an

external voltage source or through a resistor

connected to the AVIN pin.

(1) When the EN pin is set to High after the VIN settles,

the BGR and the VREG start-up.

(2) When the VREG pin exceeds its threshold value, the

UVLO is released and the SOFT START sequence is

enabled.

Case 1: Setting up the EN pin using an external voltage

source. When an external voltage source is used, the

EN pin input voltage (VENH, VENL) should satisfy the

conditions as defined in the electrical characteristics

The capacitor connected to the SS pin begins to charge

and the SS pin voltage increases linearly.

(3) The VOUT pin (DC-DC Output) voltage increases at

the same rate as the SS pin.

AVIN VREG

Normal operation begins after the VOUT pin reaches the

set voltage.

(4) When the EN pin is set to “Low”, the BGR, VREG

and UVLO stop operation. The VOUT pin / SS pin

Voltage starts to drop and the VOUT pin discharge time

depends on the value of the Feedback resistors and the

output load current.

5 V (Max.)

EN

24

0 V

Figure : Internal circuit with EN pin

Note: The SS pin capacitor should be discharged

completely before restarting the startup sequence.

An incomplete discharge process might result in an

overshoot of the output voltage.

Case 2: Setting up the EN pin through a resistor

connected to AVIN pin. When setting up the EN pin

through a resistor connected to the AVIN pin, refer to

equations (1) and (2) to calculate the optimal resistor

settings.

V_IN

EN

AVIN – Vd

Equation (1) : REN1 >

Id

(AVIN – VENH) × REN2

Equation (2) : REN1 <

VENH

4.2 V

12 V – 6 V

100 µA

VREG

= 60 kΩ

Equation (1) : REN1 >

Equation (2) : REN1 <

(12 V – 5 V) × 400 kΩ

= 560 kΩ

UVLO

5 V

0.6

2 µ

× Css

Soft Start Time (s) =

AVIN VREG

0.6 V

SS

AVIN

REN1

EN

VFB

VOUT

500

24

0.09

2 µ

× Css + 1 m

Delay Time (s) =

REN2 : 800 kΩ 50 %

PGOOD

Vd : 5.7 V 0.3 V

Id : more than 100 μA

Figure : Internal circuit with EN pin

(1) (2) (3)

(4)

Figure : Power ON/OFF sequence

Ver. CEB

13

NN30312A

OPERATION ( Continued )

Note) The characteristics listed below are reference values derived from the design of the IC and are not guaranteed.

7. Inductor and Output Capacitor Setting

IL

Eo⋅

2Ei⋅ Iox⋅ f

(

Ei − Eo

)

@ Ei = Ei_max

Io

0

Lo ≥

And its maximum current rating is

⊿IL/2

ΔIL

2

IL_max = Io_max +

(@ Ei = Ei_max)

0

Ic

The selection of COUT is primarily determined by the

ESR (Rc) required to minimize voltage ripple and load

transients. The output ripple Vrpl is approximately

bounded by:

⊿IL/2

Vo

Eo

Vrpl

Co⋅ Rc²

2Lo

ΔIL

8Co⋅ f

Vrpl =Vop −Vob = Ei⋅

Co⋅ Rc²

+

Ton

Q1

Eo⋅

(

Ei − Eo

)

= Ei⋅

+

T=1/f

Lo

2Lo

8Ei⋅ Lo⋅Co⋅ f ²

From the above equation, to achieve desired output

ripple, low ESR ceramic capacitors are recommended,

and its required RMS current rating is:

Vo(Eo)

IL

Q2

Io

Ic

Ei

Co

ΔIL

2 3

Ic(rms)_max =

(@ Ei = Ei_max)

Rc

Given the desired input and output voltages, the inductor

value and operating frequency determine the ripple

Current.

Eo⋅

Ei⋅ Lo⋅ f

(

Ei − Eo

)

ΔIL =

ΔIL

2

Iox =

Highest efficiency operation is obtained at low frequency

with small ripple current. However, achieving this

requires a large inductor. There is a trade-off among

component size, efficiency and operating frequency. A

reasonable starting point is to choose a ripple current

that is about 40 % of IOUT(MAX). The largest ripple

current occurs at the highest VIN. To guarantee that

ripple current does not exceed a specified maximum, the

inductance should be chosen according to:

Ver. CEB

14

NN30312A

TYPICAL CHARACTERISTICS CURVES

(1) Output Ripple Voltage

Condition : VIN=12V,Vout = 1.05V,Frequency = 750kHz,Skip Mode

I Load = 0A

I Load = 3A

Vout

LX

I Load = 6A

I Load = 10A

Vout

LX

Ver. CEB

15

NN30312A

TYPICAL CHARACTERISTICS CURVES ( Continued )

(1) Output Ripple Voltage

Condition : VIN=12V,Vout = 1.05V,Frequency = 750kHz,FCCM Mode

I Load = 0A

I Load = 3A

Vout

LX

I Load = 6A

I Load = 10A

Vout

LX

Ver. CEB

16

NN30312A

TYPICAL CHARACTERISTICS CURVES ( Continued )

(2) Load transient

Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 750 kHz, Iout = 10 mA ÅÆ 10 A ( 0.5 A / μs )

Skip Mode FCCM Mode

VOUT (50 mV/div)

16.5mV

11mV

10.5mV

IOUT (10 A/div)

Time (100 us/div)

Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 750 kHz, Iout = 1 A ÅÆ 10 A ( 0.4 A / μs )

Skip Mode FCCM Mode

VOUT (50 mV/div)

10mV

9.5mV

10.5mV

10mV

IOUT (10 A/div)

Time (100 us/div)

(3) Efficiency

Condition : Vin = 12 V, Vout = 1.05 V / 1.2 V / 1.8V / 3.3V / 5.0 V, Condition : Vin = 12 V, Vout = 1.05 V / 1.2 V / 1.8V / 3.3V / 5.0 V,

L = 4.7 μH, Cout = 66 μF (22 μF x 3), Frequency = 250 kHz

L = 1 μH, Cout = 66 μF (22 μF x 3), Frequency = 750kHz

Frequency = 750 kHz

100

Frequency = 250 kHz

100

90

80

70

60

90

80

70

60

FCCM/ Vo= 1.05V

50

40

30

20

10

0

FCCM/ Vo= 1.05V

FCCM/ Vo= 1.2V

FCCM/ Vo= 1.8V

FCCM/ Vo= 3.3V

FCCM/ Vo= 5.0V

SKIP/ Vo= 1.05V

SKIP/ Vo= 1.2V

SKIP/ Vo= 1.8V

SKIP/ Vo= 3.3V

SKIP/ Vo= 5.0V

50

40

30

20

10

0

FCCM/ Vo= 1.2V

FCCM/ Vo= 1.8V

FCCM/ Vo= 3.3V

FCCM/ Vo= 5.0V

SKIP/ Vo= 1.05V

SKIP/ Vo= 1.2V

SKIP/ Vo= 1.8V

SKIP/ Vo= 3.3V

SKIP/ Vo= 5.0V

IOUT (A)

Ver. CEB

17

NN30312A

TYPICAL CHARACTERISTICS CURVES ( Continued )

(4) Load regulation

Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 250 kHz

Load Regulation_f = 250kHz (skip mode)

Load regulation_f = 250kHz (FCCM mode)

1.100

1.080

1.060

1.040

1.020

1.000

1.100

1.080

1.060

1.040

1.020

1.000

IOUT (A)

Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 750 kHz

Load Regulation_f = 750kHz (skip mode)

Load Regulation_f = 750kHz (FCCM mode)

1.100

1.080

1.060

1.040

1.020

1.000

1.100

1.080

1.060

1.040

1.020

1.000

IOUT (A)

(5) Line regulation

Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 750 kHz, Iout = 1.5 A

Line Regulation_f = 750kHz (FCCM mode)

Line Regulation_f = 750kHz (skip mode)

1.40

1.20

1.00

0.80

0.60

0.40

0.20

0.00

1.40

1.20

1.00

0.80

0.60

0.40

0.20

0.00

VIN (V)

Ver. CEB

18

NN30312A

TYPICAL CHARACTERISTICS CURVES ( Continued )

(6) start/shut down

Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 750 kHz, SKIP mode, Iout = 0 A

EN

SS

EN

SS

VOUT

Time = 10ms/div

Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 750 kHz, FCCM mode, Iout = 0 A

EN

SS

EN

SS

VOUT

Time = 10ms/div

Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 750 kHz, SKIP mode, Rload = 0.5 Ω

EN

SS

EN

SS

VOUT

Time = 10ms/div

Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 750 kHz, FCCM mode, Rload = 0.5 Ω

EN

SS

EN

SS

VOUT

Time = 10ms/div

Ver. CEB

19

NN30312A

TYPICAL CHARACTERISTICS CURVES ( Continued )

(7) Short Current Protection

Condition : VIN = 12 V, Vout = 1.05 V, Frequency = 750 kHz

Skip Mode

FCCM Mode

LX

SS

VOUT

IOUT

Time = 10ms/div

(8) Switching Frequency

Condition : Vin = 12 V, Vout = 1.05 V, Frequency = 750 kHz, Iout = 10 mA ~ 10 A

LX Average Frequency (MHz) Skip Mode

LX Average Frequency (MHz) FCCM Mode

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.01

0.1

1

10

0.01

0.1

1

10

ILOAD (A)

Condition : Vout = 1.05 V, Frequency = 750 kHz, Iout = 5 A

LX Average Frequency (MHz) Skip Mode

LX Average Frequency (MHz) FCCM Mode

0.90

0.85

0.80

0.75

0.70

0.65

0.60

0.55

0.50

0.90

0.85

0.80

0.75

0.70

0.65

0.60

0.55

0.50

4

6

8

10

12

14

16

18

20

22

24

26

28

30

4

6

8

10

12

14

16

18

20

22

24

26

28

30

VIN(V)

Ver. CEB

20

NN30312A

TYPICAL CHARACTERISTICS CURVES ( Continued )

(9) Thermal Performance

Condition : VIN=12V , Vout = 1.05V , Frequency = 750kHz , ILoad = 6A , FCCM Mode

Ver. CEB

21

NN30312A

APPLICATIONS INFORMATION

Condition : Vout = 3.3 V, Frequency = 750 kHz, SKIP mode

PVIN

C-BST

4 0 3 9 3 8 3 7 3 6 3 5 3 3 3 2

3 1

LX

SS

C-PVIN5

C-PVIN6

VOUT

VFB

L-LX

R-FBX

VREG

VOUT

LX

VFB

EN

C-VREG

EN

FSEL

91011121314151617

18 19 20

C-DCDCOUT1

C-DCDCOUT2

C-DCDCOUT3

AVIN

C-AVIN2

C-AVIN1

DCDCOUT

L-LX

PGND

Figure : layout

Figure : Application circuit

NN30312A

Figure : Top Layer with silk screen

( Top View ) with Evaluation board

Figure : Bottom Layer with silk screen

( Bottom View ) with Evaluation board

Notes) This application circuit and layout is an example. The operation of mass production set is not guaranteed. You should perform

enough evaluation and verification on the design of mass production set. You are fully responsible for the incorporation of the

above application circuit and information in the design of your equipment.

Ver. CEB

22

NN30312A

APPLICATIONS INFORMATION ( Continued )

Reference Designator

C-AVIN1

C-AVIN2

C-BST

QTY

2

Value

10 μF

0.1 μF

22 μF

10 μF

0.1 μF

10 nF

1.0 μF

1.0 μH

Manufacturer

TAIYO YUDEN

Murata

Part Number

Note

UMK325AB7106MM-T

GRM188R72A104KA35L

GRM32ER71E226KE15L

UMK325AB7106MM-T

GRM188R72A104KA35L

GRM188R72A103KA01L

GRM188R71E105KA12L

SPM6530-1R0M120

—

1

Murata

C-DCDCOUT

C-PVIN5

C-PVIN6

C-SS

3

Murata

2

TAIYO YUDEN

Murata

1

Murata

C-VREG

1

Murata

L-LX

1

TDK

FSEL

GND ( 1250 kHz )

OPEN ( 750 kHz )

4.7 μH

TOKO

FDA1254-4R7M

FSEL

VREG ( 250 kHz )

R-FB1

R-FB2

R-RB3

R-FB4

R-PG

1

3.3 kΩ

1.2 kΩ

1.0 kΩ

0

Panasonic

ERJ3EKF3301V

ERJ3EKF1201V

ERJ3EKF1001V

ERJ3GEY0R00V

ERJ3EKF1003V

—

100 kΩ

Figure : Recommended component

Ver. CEB

23

NN30312A

PACKAGE INFORMATION ( Reference Data )

Outline Drawing

Unit : mm

Ver. CEB

24

NN30312A

PACKAGE INFORMATION ( Reference Data )

Power dissipation (Supplementary explanation)

Ver. CEB

25

NN30312A

IMPORTANT NOTICE

1.The products and product specifications described in this book are subject to change without notice for

modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore,

ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your

requirements.

2.When using the LSI for new models, verify the safety including the long-term reliability for each product.

3.When the application system is designed by using this LSI, be sure to confirm notes in this book.

Be sure to read the notes to descriptions and the usage notes in the book.

4.The technical information described in this book is intended only to show the main characteristics and application

circuit examples of the products. No license is granted in and to any intellectual property right or other right owned

by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to

the infringement upon any such right owned by any other company which may arise as a result of the use of

technical information de-scribed in this book.

5.This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of

our company.

6.This LSI is intended to be used for general electronic equipment.

Consult our sales staff in advance for information on the following applications: Special applications in which

exceptional quality and reliability are required, or if the failure or malfunction of this LSI may directly jeopardize

life or harm the human body.

Any applications other than the standard applications intended.

(1) Space appliance (such as artificial satellite, and rocket)

(2) Traffic control equipment (such as for automobile, airplane, train, and ship)

(3) Medical equipment for life support

(4) Submarine transponder

(5) Control equipment for power plant

(6) Disaster prevention and security device

(7) Weapon

(8) Others : Applications of which reliability equivalent to (1) to (7) is required

It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in

connection with your using the LSI described in this book for any special application, unless our company agrees

to your using the LSI in this book for any special application.

7.This LSI is neither designed nor intended for use in automotive applications or environments unless the specific

product is designated by our company as compliant with the ISO/TS 16949 requirements.

Our company shall not be held responsible for any damage incurred by you or any third party as a result of or in

connection with your using the LSI in automotive application, unless our company agrees to your using the LSI in

this book for such application.

8.If any of the products or technical information described in this book is to be exported or provided to non-residents,

the laws and regulations of the exporting country, especially, those with regard to security export control, must be

observed.

9. Please use this product in compliance with all applicable laws and regulations that regulate the inclusion or use of

controlled substances, including without limitation, the EU RoHS Directive.

Our company shall not be held responsible for any damage incurred as a result of your using the LSI not

complying with the applicable laws and regulations.

Ver. CEB

26

NN30312A

USAGE NOTES

1. When designing your equipment, comply with the range of absolute maximum rating and the guaranteed

operating conditions (operating power supply voltage and operating environment etc.). Especially, please be

careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off

and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of

break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as

redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical

injury, fire, social damages, for example, by using the products.

2. Comply with the instructions for use in order to prevent breakdown and characteristics change due to external

factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's

process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf

life and the elapsed time since first opening the packages.

3. Pay attention to the direction of LSI. When mounting it in the wrong direction onto the PCB (printed-circuit-board),

it might smoke or ignite.

4. Pay attention in the PCB (printed-circuit-board) pattern layout in order to prevent damage due to short circuit

between pins. In addition, refer to the Pin Description for the pin configuration.

5. Perform a visual inspection on the PCB before applying power, otherwise damage might happen due to

problems such as a solder-bridge between the pins of the semiconductor device. Also, perform a full technical

verification on the assembly quality, because the same damage possibly can happen due to conductive

substances, such as solder ball, that adhere to the LSI during transportation.

6. Take notice in the use of this product that it might break or occasionally smoke when an abnormal state occurs

such as output pin-VCC short (Power supply fault), output pin-GND short (Ground fault), or output-to-output-pin

short (load short) .

And, safety measures such as an installation of fuses are recommended because the extent of the above-

mentioned damage and smoke emission will depend on the current capability of the power supply.

7. The protection circuit is for maintaining safety against abnormal operation. Therefore, the protection circuit

should not work during normal operation.

Especially for the thermal protection circuit, if the area of safe operation or the absolute maximum rating is

momentarily exceeded due to output pin to VCC short (Power supply fault), or output pin to GND short (Ground

fault), the LSI might be damaged before the thermal protection circuit could operate.

8. Unless specified in the product specifications, make sure that negative voltage or excessive voltage are not

applied to the pins because the device might be damaged, which could happen due to negative voltage or

excessive voltage generated during the ON and OFF timing when the inductive load of a motor coil or actuator

coils of optical pick-up is being driven.

9. The product which has specified ASO (Area of Safe Operation) should be operated in ASO

10. Verify the risks which might be caused by the malfunctions of external components.

11. Connect the metallic plates on the back side of the LSI with their respective potentials (AGND, PVIN, LX). The

thermal resistance and the electrical characteristics are guaranteed only when the metallic plates are connected

with their respective potentials.

Ver. CEB

27

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any

other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any

other company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for general applications (such as office equipment, communications

equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.

Consult our sales staff in advance for information on the following applications:

– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,

life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of

the products may directly jeopardize life or harm the human body.

It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with

your using the products described in this book for any special application, unless our company agrees to your using the products in

this book for any special application.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.

20100202


型号：	GRM32ER71E226KE15L
厂家：	PANASONIC
描述：	Synchronous DC-DC Step down Regulator comprising of Controller IC and Power MOSFET 同步DC-DC降压稳压器，包括控制器IC和功率MOSFET 稳压器控制器
文件：	总28页 (文件大小：1272K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GRM32ER71E226KE15L [PANASONIC]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E