LN152 [PANASONIC]
GaAs Infrared Light Emitting Diode; 砷化镓红外发光二极管
| 型号： | LN152 |
| 厂家： | 
PANASONIC |
| 描述： | GaAs Infrared Light Emitting Diode |
| 文件： | 总2页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Infrared Light Emitting Diodes
LN152
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems
Features
High-power output, high-efficiency : PO = 10 mW (typ.)
2-ø0.45±0.05
Wide directivity, matched for external optical systems : θ = 100 deg.
Infrared light emission close to monochromatic light :
1.0
λP = 950 nm (typ.)
0.1
Optimum for mesuring instruments and control equipments
in conbination with silicon photodetectors
±
1.0
High-speed modulation
2
1
Absolute Maximum Ratings (Ta = 25˚C)
2.54±0.2
Parameter
Symbol
Ratings
160
Unit
mW
mA
A
1: Anode
2: Cathode
Power dissipation
PD
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
IF
100
*
IFP
1.5
VR
Topr
Tstg
3
V
–25 to +85
–30 to +100
˚C
˚C
*
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Radiant power
Symbol
Conditions
min
typ
10
max
Unit
mW
nm
nm
V
PO
λP
∆λ
VF
IR
Ct
tr
IF = 100mA
5
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Rise time
IF = 100mA
IF = 100mA
IF = 100mA
VR = 3V
950
50
1.3
1.6
10
µA
pF
VR = 0V, f = 1MHz
60
1
µs
IFP = 100mA
Fall time
tf
1
µs
Half-power angle
θ
The angle in which radiant intencity is 50%
100
deg.
1
Infrared Light Emitting Diodes
LN152
IF — Ta
I
FP — Duty cycle
IFP — VF
120
t
w = 10µs
f = 100Hz
Ta = 25˚C
tw = 10µs
Ta = 25˚C
10 2
10
1
10 3
100
80
10 2
10
60
10 –1
10 –2
1
40
20
0
10 –1
10 –2
10 –3
– 25
0
20
40
60
80
100
10 4
120
10 –2
10 –1
1
10
10 2
0
1
2
3
4
5
Ambient temperature Ta (˚C )
Duty cycle (%)
Forward voltage VF (V)
∆PO — IFP
VF — Ta
∆PO — Ta
1.6
1.2
0.8
0.4
0
10
(1) tw = 10µs
f = 100Hz
(2) DC
IF = 50mA
10 3
IF = 100mA
Ta = 25˚C
10 2
10
50mA
10mA
(1)
1
(2)
1
10 –1
10 –2
10 –1
1
10
10 2
10 3
– 40
0
40
80
120
– 40
0
40
80
Pulse forward current IFP (mA)
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
λP — Ta
Spectral characteristics
Directivity characteristics
0˚ 10˚ 20˚ 30˚
1000
980
960
940
920
900
100
80
60
40
20
0
I
F = 100mA
40˚
IF = 100mA
100
80
Ta = 25˚C
50˚
60˚
60
40
70˚
80˚
90˚
20
– 40
0
40
80
800 850 900 950 1000 1050 1100
Ambient temperature Ta (˚C )
Wavelength λ (nm)
2
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