LNC802PS [PANASONIC]

GaAlAs Semiconductor Laser; GaAlAs的半导体激光
LNC802PS
型号: LNC802PS
厂家: PANASONIC    PANASONIC
描述:

GaAlAs Semiconductor Laser
GaAlAs的半导体激光

半导体 光电 二极管 激光二极管
文件: 总2页 (文件大小:43K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Semiconductor Laser  
LNC802PS  
GaAlAs Semiconductor Laser  
+0  
ø5.6  
–0.025  
Unit : mm  
ø4.3±0.1  
2
ø3.55±0.1  
ø1.0 min.  
Y
Features  
Low threshold current  
LD  
PD  
3
X
1
Junction plane  
Stable single horizontal mode oscillation  
Long lifetime, high reliability  
1.0±0.1  
Reference slot  
Kovar glass  
LD pellet  
Z
High radiant power : 50mW  
Reference plane  
ø1.2 max.  
3-ø0.45  
Applications  
Optical data processing devices  
2
Optical disk memory  
Medical equipment  
1
3
1: LD Anode  
2: Common Case  
3: PD Cathode  
ø2.0  
Bottom view  
Absolute Maximum Ratings (Ta = 25˚C)  
Parameter  
Radiant power  
Symbol  
PO  
Ratings  
50  
Unit  
mW  
V
Laser  
PIN  
VR  
1.5  
Reverse voltage  
VR (PIN)  
Pd (PIN)  
Topr  
30  
V
Power dissipation  
100  
mW  
˚C  
Operating ambient temperature  
Storage temperature  
–10 to +60  
– 40 to +80  
Tstg  
˚C  
Electro-Optical Characteristics (Ta = 25˚C)  
Parameter  
Threshold current  
Operating current  
Operating voltage  
Oscillation wavelength  
Symbol  
Ith  
Conditions  
min  
10  
typ  
30  
max  
50  
Unit  
mA  
mA  
V
CW  
IOP  
CW PO = 40mW  
45  
65  
100  
3.0  
845  
13  
VOP  
λL  
CW PO = 40mW  
2.0  
830  
10  
CW PO = 40mW  
815  
7
nm  
*1  
Horizontal direction  
Vertical direction  
θ//  
CW PO = 40mW  
deg.  
deg.  
Radiation angle  
*1  
θ
CW PO = 40mW  
18  
0.6  
25  
30  
Differential efficiency  
PIN photo current  
η
CW PO = 36mW/I(40mW – 4mW)  
CW PO = 40mW, VR (PIN) = 5V  
VR (PIN) = 15V  
1.0  
1.5  
IP  
mA  
µA  
Reverse current (DC)  
IR  
θX  
θY  
0.1  
X direction  
Y direction  
CW PO = 40mW  
–2.0  
–3.0  
+2.0  
+3.0  
deg.  
deg.  
Optical axis  
accuracy  
CW PO = 40mW  
*1  
The radiation angle is indicated as half full angles.  
1
Semiconductor Laser  
LNC802PS  
PO — IOP  
I — V  
Far field pattern  
60  
200  
100  
0
100  
80  
60  
40  
20  
0
Ta = 25˚C  
50  
40  
30  
20  
10  
θ//  
θ
–100  
0
–200  
0
40  
80  
120  
–4  
–2  
0
2
4
40  
20  
0
20  
40  
Operating current IOP (mA)  
Voltage V (V)  
Angle θ (deg.)  
Ith — Ta  
I
OP — Ta  
PO — Ta  
10 2  
10 3  
60  
50  
40  
30  
20  
10  
0
PO = 40mW  
10  
10 2  
1
– 10  
10  
– 10  
10  
30  
50  
70  
10  
30  
50  
70  
– 10  
10  
30  
50  
70  
Ambient temperature Ta (˚C )  
Ambient temperature Ta (˚C )  
Ambient temperature Ta (˚C )  
Id — Ta  
10 2  
VR (PIN) = 15V  
10  
1
10 –1  
10 –2  
10 –3  
– 10  
10  
30  
50  
70  
Ambient temperature Ta (˚C )  
2

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