LNCT28PF01WW [PANASONIC]

Laser Diode;


型号：	LNCT28PF01WW
厂家：	PANASONIC
描述：	Laser Diode 光电
文件：	总9页 (文件大小：559K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Laser Diode

LNCT28PF01WW

(1)

Description

Package

(2)

LNCT28PF01WW is a MOCVD fabricated 660nm and 780nm band

dual wavelength laser diode with multi quantum well structure,

adapting open type frame package to reduce the size and weight.

(3)

Feature

y Dual wavelength: 661 nm (typ) and 783 nm (typ)

y High output power: 300 mW (pulse) for Red and 380 mW (pulse) for IR

y Package : Flat package

y Operating temperature : Max. +85°C

Pin assignment

Application

RED

PIN connection

y Optical disk drive

y Sensing

y Industrial use

(1) RED-LD Anode

(2) Com LD Cathode

(3) IR-LD Anode

Absolute Maximum Ratings ³⁾

Item

Symbol

Value

100

Unit

Condition

Output power

300

pulse ¹⁾

RED

Reverse voltage

1.5

10 to +85

200

Operating case temperature

−

CW/pulse

Output power

380

pulse ²⁾

Reverse voltage

1.5

10 to +85

40 to +85

Operating case temperature

Storage temperature

−

CW/pulse

Tstg

Note) 1) Pulse width ≤ 30 ns, duty ≤ 33% for RED-LD

2) Pulse width ≤ 100 ns, duty ≤ 50% for IR-LD

3) These ratings are guaranteed only when RED-LD or IR-LD is turned on individually.

T=25°C, CW, Po=90 mW for RED-LD, 175 mW for IR-LD

Electrical and Optical Characteristics

Item

Threshold current

Symbol

Ith

Min.

Typ.

128

2.4

661

Max.

Unit

Condition

Operating current

Operating voltage

Wavelength

Iop

180

3.0

Vop

RED

656

7.5

13.0

665

13.0

19.5

deg

Parallel

FWHM

Beam Divergence

Perpendicular

Threshold current

Operating current

Operating voltage

Wavelength

Ith

Iop

Vop

210

2.5

783

275

3.0

777

6.0

12.0

791

11.5

19.0

deg

Parallel

FWHM

Beam divergence

Perpendicular

FWHM : Full width at half maximum

Publication date: August 2013

Page 1 of 8

Ver. AEK

Laser Diode

LNCT28PF01WW

Representative Characteristics [RED-LD]

Output Power vs Current (CW)

Voltage vs Current (CW)

25℃ 60℃ 80℃ 85℃

120

100

25℃ 60℃ 80℃ 85℃

100

200

300

400

500

100

200

300

400

500

Current (mA)

Voltage vs Current (Pulse)

Output Power vs Current (Pulse)

25℃ 60℃ 80℃ 85℃

350

300

250

200

150

100

25℃ 60℃ 80℃ 85℃

200

400

600

800

200

400

600

800

Current (mA)

Page 2 of 8

Ver. AEK

Laser Diode

LNCT28PF01WW

Representative Characteristics [RED-LD]

Beam Divergence

Perpendicular to the Junction (CW)

Beam Divergence

Parallel to the Junction (CW)

1.0

0.8

0.6

0.4

0.2

0.0

Po =100mW

0.8

0.6

0.4

0.2

0.0

-30

-20

-10

-30

-20

-10

Angle (deg)

Beam Divergence of parallel

to the junction vs Output Power (CW)

Beam Divergence of Perpendicular

to the junction vs Output Power (CW)

25℃

85℃

25℃

100

Output Power [mW]

Wavelength vs Temperature (CW)

680

100mW

5mW

675

670

665

660

655

Temperatuer (

)

℃

Page 3 of 8

Ver. AEK

Laser Diode

LNCT28PF01WW

Representative Characteristics [IR-LD]

Output Power vs Current (CW)

Voltage vs Current (CW)

25℃ 60℃ 80℃ 85℃

250

200

150

100

25℃ 60℃ 80℃ 85℃

100

200

300

400

500

100

200

300

400

500

Current (mA)

Voltage vs Current (Pulse)

Output Power vs Current (Pulse)

25℃ 60℃ 80℃ 85℃

400

300

200

100

25℃ 60℃ 80℃ 85℃

200

400

600

800

200

400

600

800

Current (mA)

Page 4 of 8

Ver. AEK

Laser Diode

LNCT28PF01WW

Representative Characteristics [IR-LD]

Beam Divergence

Perpendicular to the Junction (CW)

Beam Divergence

Parallel to the Junction (CW)

1.0

0.8

0.6

0.4

0.2

0.0

Po =200mW

0.8

0.6

0.4

0.2

0.0

-30

-20

-10

-30

-20

-10

Angle (deg)

Beam Divergence of parallel

to the junction vs Output Power (CW)

Beam Divergence of Perpendicular

to the junction vs Output Power (CW)

85℃

25℃

85℃

25℃

100

150

200

100

150

200

Output Power [mW]

Wavelength vs Temperature (CW)

810

805

800

795

790

785

780

775

770

200mW

5mW

Temperature (

)

℃

Page 5 of 8

Ver. AEK

Laser Diode

LNCT28PF01WW

Package Dimensions

Unit: mm

（４）

（３）

（２）

（１）

2.55±0.2

3.5±0.2

1.3

0.825

5.15±0.1

4.05±0.1

4.85±0.1

4.32

3.52

0.09±0.001

（spacing of E.P.）

1.65±0.15

0.85

±0.15

0.4

±0.05

2.53±0.08

(Distance from plane A

to Red-E.P.)

2-R0.2MAX

2-R0.25MAX

1.63

0.83

＋1.5°

－0.5°

0.3±0.

IR E.P.

Red E.P.

1.1±0.1

（１）

（２）

（５）

（３）

1.3±0.3

3-0.6±0.2

3-0.4±0.2

③

②

①

(1) LD Chip

(2) Submount

(3) Package

(4) Ag Paste

(5) Au Wire

y E.P. = Emitting point

y General corner R is 0.25mm

Page 6 of 8

Ver. AEK

Laser Diode

LNCT28PF01WW

Page 7 of 8

Ver. AEK

Laser Diode

LNCT28PF01WW

Cautions

Laser class

This product is ranked in class IIIb laser according to IEC60825-1 and JIS standard 6802 “Laser Product Emission

Safety Standards”, so that safety protection is necessary when laser beam is radiated.

Flat package laser diode (FLD)

This product is adopting open type plastic package for the reduction of size and weight, so please take care of dust

and touching laser diode with tweezers.

Prevention of Electrostatic discharge (ESD) and surge stress

Semiconductor laser diode is sensitive device to ESD and surge, so that sufficient cautions are needed. If electric

pulses that may cause emission are inputted, the laser itself will be damaged by light intensity and will bring the laser

diode degradation in a short time. Therefore, taking all possible measures against ESD and surge for FLD usage is

strongly requested.

Heat sink design

If case temperature becomes higher, the life of semiconductor laser diode becomes shorter. So it is important that

design for heat radiation is appropriated. Especially it is effective to make the heat radiation from metal moiety of the

package back side, locating under the submount and laser diode.

Precaution at soldering

When soldering, please give attention to the mechanical stress and the temperature because of using Ag paste.

Temperature of die-pad portion should be less than 200℃. It is recommended to radiate heat by putting heat sink on

the package.

Soldering temperature and time

Temperature ： Less than 360°C （FLD only）

Less than 380°C （FLD with holder for heat radiation）

： Within 5sec (Recommend within 3sec)

Time

Page 8 of 8

Ver. AEK

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any

other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any

other company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for general applications (such as office equipment, communications

equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.

Consult our sales staff in advance for information on the following applications:

– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,

life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of

the products may directly jeopardize life or harm the human body.

It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with

your using the products described in this book for any special application, unless our company agrees to your using the products in

this book for any special application.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.

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