MA200K [PANASONIC]

Rectifier Diode, 1 Element, 0.1A, Silicon, TO-236AB, MINI TYPE, SC-59, 3 PIN;
MA200K
型号: MA200K
厂家: PANASONIC    PANASONIC
描述:

Rectifier Diode, 1 Element, 0.1A, Silicon, TO-236AB, MINI TYPE, SC-59, 3 PIN

光电二极管
文件: 总3页 (文件大小:157K)
中文:  中文翻译
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Switching Diodes  
MA200K  
Silicon epitaxial planer type  
Unit : mm  
For switching circuits  
2.8 +00..32  
0.65±0.15  
1.5 +00..0255  
0.65±0.15  
Features  
Small reverse current IR, with extremely small leakage current  
1
2
trr of a soft recovery type  
3
3  
Absolute Maximum Ratings (Ta= 25˚C)  
±0.2  
Symbol  
Rating  
Parameter  
Reverse voltage (DC)  
Peak reverse voltage  
Forward current (DC)  
Peak forward current  
Non-repetitive peak forward surge current  
Junction temperature  
Storage temperature  
it  
1 : Anode  
2 : NC  
3 : Cathode  
VR  
80  
0  
JEDEC : TO-236  
EIAJ : SC-59  
VRM  
IF  
V
00  
mA  
mA  
A  
˚C  
Mini Type Package (3-pin)  
IFM  
225  
Marking Symbol : M4M  
SM  
Tj  
*
50  
Internal Connection  
150  
Tg  
– 55 to +15
C  
1
3
2
* t=1s  
Electrical Characteristics (Ta= 25˚C)  
Parameer  
Symbol  
Condition  
min  
80  
typ  
max  
10  
Unit  
nA  
nA  
V
IR1  
VR= 75V  
Reverse curret (DC)  
IR2  
VR= 5V, Ta= 85˚C  
IF=100mA  
20  
Forward voltage (DC)  
Reverse voltage (DC)  
Terminal capacitance  
VF  
1.2  
VR  
IR=100µA  
V
Ct  
VR= 0V, f=1MHz  
IF=10mA, VR= 6V  
Irr= 0.1 · IR, RL=100  
2.5  
pF  
*
Reverse recovery time  
trr  
100  
ns  
Note 1 : Rated input/output frequency : 100MHz  
2 : * trr measuring circuit  
Marking  
Bias Insertion  
Unit N-50BU  
Input Pulse  
Output Pulse  
t
t
p
r
M4M  
t
10%  
t
rr  
I
F
t
A
90%  
t =2µs  
V
R
I =0.1 · I  
rr  
R
I =10mA  
p
F
t =0.35ns  
r
δ=0.05  
V =6V  
R
R =100Ω  
L
Pulse Generator  
PG-10N  
s
W.F.Analyzer  
SAS-8130  
R =50Ω  
i
R =50Ω  
Switching Diodes  
MA200K  
IF – VF  
VF – Ta  
IR – VR  
102  
10  
103  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
Ta=150˚C  
100˚C  
102  
10  
Ta=150˚C  
IF=100mA  
1
100˚C  
10mA  
3mA  
1
10–1  
10–2  
10–3  
25˚C  
–20˚C  
101  
–2  
10–3  
25˚C  
0
60  
80  
100 120  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
–40  
0
40  
80  
120 160  
(
V
)
Reverse voltage VR  
(
V
)
(
)
Forward voltage VF  
Ambient temperatuTa ˚C  
IR – Ta  
Ct R  
102  
10  
6
4
3
1
0
=25˚C  
VR=80V  
35V  
6V  
1
10–1  
10–2  
10–3  
–40  
0
40  
120 160 0  
0
20  
40  
80  
100 120  
Ambietemperatu
(
V
)
Reverse voltage VR  
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-  
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product  
Standards in advance to make sure that the latest specifications satisfy your requirements.  
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions  
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute  
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any  
defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire  
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.  
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which  
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.  
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita  
Electric Industrial Co., Ltd.  

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