MA3G655 [PANASONIC]
Silicon planar type (cathode common); 硅平面型(阴极常见)型号: | MA3G655 |
厂家: | PANASONIC |
描述: | Silicon planar type (cathode common) |
文件: | 总2页 (文件大小:47K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Fast Recovery Diodes (FRD)
MA3G655
Silicon planar type (cathode common)
Unit : mm
15.0 0.3
11.0 0.2
5.0 0.2
3.2
For switching circuits
φ 3.2 0.1
I Features
•
•
•
High reverse voltage VR
Low forward voltage VF
Fast reverse recovery time trr
2.0 0.2
2.0 0.1
0.6 0.2
1.1 0.1
I Absolute Maximum Ratings Ta = 25°C
5.45 0.3
Parameter
Symbol
VRRM
Rating
300
Unit
V
10.9 0.5
Repetitive peak reverse voltage
1
2
3
Non-repetitive peak reverse
surge voltage
VRSM
300
V
1 : Anode
2 : Cathode
(Common)
3 : Anode
Average forward current
IF(AV)
IFSM
20
A
A
TOP-3F(a) (TOP-3 Full Pack Package)
Non-repetitive peak forward
surge current*
150
Internal Connection
Junction temperature
Storage temperature
Tj
−40 to +150
−40 to +150
°C
°C
Tstg
Note)
* : Half sine-wave; 10 ms/cycle
1
2
3
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
IRRM1
IRRM2
VF
Conditions
Min
Typ
Max
20
5
Unit
µA
Repetitive peak reverse current
VRRM = 300 V, TC = 25°C
VRRM = 300 V, Tj = 150°C
IF = 10 A, TC = 25°C
mA
V
Forward voltage (DC)
Reverse recovery time*
Thermal resistance
1
trr
IF = 1 A, IR = 1 A
50
1.5
40
ns
Rth(j-c)
Rth(j-a)
°C/W
°C/W
Direct current (between junction and case)
Note) 1. Rated input/output frequency: 10 MHz
2. * : trr measuring circuit
50 Ω
50 Ω
trr
IF
D.U.T
0.1 × IR
IR
5.5 Ω
1
MA3G655
Fast Recovery Diodes (FRD)
IF VF
PD(AV) IF(AV)
IR VR
7
6
5
4
3
2
10
10
10
10
10
10
60
100
10
Ta = 150°C
t0
50
t1
Ta = 150°C
25°C
100°C
25°C
40
100°C
t0 / t1 = 1/6
30
1
1/3
1/2
DC
20
10
0
0.1
0.01
10
0
50 100 150 200 250 300 350
0
4
8
12
16
20
24
0
0.4
0.8
1.2
1.6
2.0
(
)
V
Reverse voltage VR
( )
Average forward current IF(AV) A
(
)
Forward voltage VF
V
IF(AV) TC
Rth(t) t
2
10
24
20
16
12
8
Without heat sink
t0 / t1 = 1/2
1/3
DC
10
1/6
1
−1
10
4
t0
t1
−2
10
10
0
30
−4
−3
−2
−1
2
3
4
10
10
10
10
1
10
10
10
50
100
150
( )
s
Time
t
(
)
Case temperature TC °C
2
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