MA3V176D [PANASONIC]
Silicon epitaxial planar type; 硅外延平面型
| 型号： | MA3V176D |
| 厂家： | 
PANASONIC |
| 描述： | Silicon epitaxial planar type |
| 文件： | 总2页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Switching Diodes
MA3V175D, MA3V176D
Silicon epitaxial planar type
Unit : mm
4.0 0.2
For switching circuits
I Features
•
•
Short reverse recovery time trr
Small terminal capacitance, Ct
I Absolute Maximum Ratings Ta = 25°C
marking
Parameter
Symbol
VR
Rating
40
Unit
V
1
2
3
MA3V175D
MA3V176D
MA3V175D
MA3V176D
Single
Reverse voltage
(DC)
80
VRM
40
V
Peak reverse
voltage
1.27 1.27
2.54 0.15
1 : Cathode
2 : Anode
3 : Cathode
80
IF
100
mA
mA
mA
Forward current
(DC)
New S-Type Package
Double
150
Single
IFM
225
Peak forward
current
Internal Connection
Double
340
Single
IFSM
500
Non-repetitive peak
forward surge current
*
Double
750
Junction temperature
Storage temperature
Tj
150
°C
°C
1
2
3
Tstg
−55 to +150
Note)
* : t = 1 s
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
IR
Conditions
Min
Typ
Max
0.1
Unit
Reverse current (DC)
MA3V175D
MA3V176D
VR = 35 V
VR = 75 V
µA
0.1
Forward voltage (DC)
VF
VR
IF = 100 mA
1.2
V
V
Reverse voltage (DC) MA3V175D
MA3V176D
IR = 100 µA
40
80
Terminal capacitance
Reverse recovery time*
Ct
trr
VR = 0 V, f = 1 MHz
4
pF
ns
IF = 10 mA, VR = 6 V
10
Irr = 0.1 · IR, RL = 100 Ω
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Input Pulse
DUT
Output Pulse
trr
tr
tP
IF
t
0
Sampling
10%
Oscilloscope
Ri = 50 Ω
Irr = 0.1·I
R
90%
IF
Rs = 50 Ω
V = VR + IR·RS
tp = 100 ns
tr = 0.6 ns
δ = 0.05
IF = 10 mA
VR = 6 V
RL = 100 Ω
1
MA3V175D, MA3V176D
Switching Diodes
IF VF
IR VR
IR VR
3
10
10
10
MA3V175D
MA3V176D
Ta = 125°C
75°C
2
10
1
1
Ta = 125°C
75°C
−1
−1
10
10
10
Ta = 125°C
−2
−3
−4
−2
−3
−4
1
10
10
10
10
10
10
75°C
25°C
−1
−2
− 20°C
10
10
25°C
25°C
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
)
60
0
20
40
60
80
100 120
(
)
V
(
Forward voltage VF
Reverse voltage VR
V
( )
Reverse voltage VR V
VF Ta
IR Ta
IR Ta
10
1.2
1.0
0.8
0.6
0.4
0.2
0
10
MA3V175D
MA3V176D
1
1
VR = 80 V
VR = 40 V
40 V
−1
−1
10
10
20 V
IF = 10 mA
3 mA
1 mA
−2
−3
−4
−2
−3
−4
10
10
10
10
10
10
0.1 mA
−40
0
40
80
120 160
−40
0
40
80
120 160
−40
0
40
80
120 160
(
)
(
)
Ambient temperature Ta °C
(
)
Ambient temperature Ta °C
Ambient temperature Ta °C
Ct VR
10
8
f = 1 MHz
Ta = 25°C
6
4
2
1
0.8
0.6
0.4
0.2
10
0
4
8
12 16 20 24 28 32 36 40
(
)
V
Reverse voltage VR
2
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