MA6XD16 [PANASONIC]

Mixer Diode, L Band, Silicon, SC-74, 6 PIN;
MA6XD16
型号: MA6XD16
厂家: PANASONIC    PANASONIC
描述:

Mixer Diode, L Band, Silicon, SC-74, 6 PIN

光电二极管
文件: 总3页 (文件大小:187K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Schottky Barrier Diodes (SBD)  
MA6XD16  
Silicon epitaxial planar type  
Unit: mm  
+0.20  
–0.05  
1.9 0.1  
(0.95) (0.95)  
2.90  
For high speed switching  
+0.10  
–0.06  
0.16  
4
5
6
Features  
Fore elements are contained in one package, allowing high-  
density mounting  
3
2
1
High-frequency wave detection is possible  
Mini type 6-pin package  
0.30  
1 : Anode 1  
2 : Anode 2  
Cathode 3  
3 : Cathode 2  
4 : Anode 3  
5 : Cathode 1  
Anode 4  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Reverse voltage (DC)  
Peak reverse voltage  
Forward current (DC) Single  
Sees  
Symbol  
VR  
Rati
Unit  
V
VR
30  
30  
V
6 : Cathode 4  
EIAJ : SC-74  
Mini6-G2 Package  
mA  
20  
Peak forward current Single  
Serie
I
150  
mA  
Marking Symbol: M7A  
Internal Connection  
110  
Junction temperatu
Storage temperate  
Tj  
125  
°C  
°C  
4
5
6
1
Tst
to 125  
3
2
Elctrical CharacteristicTa = 25°C 3°C  
eter  
Revers
Forward vo
Symbol  
IR  
Conditions  
Min  
Typ  
Max  
30  
Unit  
µA  
V
VR = 30 V  
IF = 1 mA  
VF1  
VF2  
Ct  
0.3  
1.0  
IF = 30 mA  
Terminal capacitance  
Reverse recovery time *  
VR = 1 V, f = 1 MHz  
1.5  
1.0  
pF  
ns  
trr  
IF = IR = 10 mA  
Irr = 1 mA, RL = 100 Ω  
Detection efficiency  
η
Vin = 3 V(peak) , f = 30 MHz  
RL = 3.9 k, CL = 10 pF  
65  
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body  
and the leakage of current from the operating equipment.  
2. Rated input/output frequency: 2 GHz  
3. : trr measuring instrument  
*
Bias Application Unit N-50BU  
Input Pulse  
tp  
Output Pulse  
trr  
tr  
t
10%  
IF  
t
A
90%  
VR  
Irr=1 mA  
tp=2 µs  
tr=0.35 ns  
δ=0.05  
IF=10 mA  
IR=10 mA  
RL=100 Ω  
Pulse Generator  
(PG-10N)  
Wave Form Analyzer  
(SAS-8130)  
Rs=50 Ω  
Ri=50 Ω  
Publication date: August 2001  
SKH00113AED  
1
MA6XD16  
IF VF  
IR VR  
VF Ta  
103  
104  
103  
102  
10  
1.0  
0.8  
0.6  
0.4  
2  
Ta = 125°C  
5°C  
75°C 25°C  
20°C  
102  
Ta = 125°C  
IF = 30 mA  
10  
1
°C  
10 mA  
101  
102  
1
1 mA  
101  
0
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
0
10  
1
20  
25  
3
0
40  
)
Ambient temperature Ta °C  
80  
120  
160  
(
)
V
( )  
Rerse voltage VR V  
(
Forward voltage VF  
IR Ta  
Ct VR  
104  
103  
102  
10  
3.2  
2.8  
2.4  
2.0  
1.
0.4  
0
f = 1
= 25°C  
VR =
V  
V  
1
10
0
5
10  
15  
20  
25  
30  
0
40  
80  
0 160 00  
( )  
Reverse voltage VR V  
(
)
Ambtemperure Ta °C  
SKH00113AED  
2
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other  
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other  
company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-  
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product  
Standards in advance to make sure that the latest specifictions saisfy your requirements.  
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions  
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute  
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any  
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure  
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire  
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.  
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,  
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which  
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.  
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita  
Electric ndurial Co., Ltd.  

相关型号:

MA6Z100WA

Zener Diode, 10V V(Z), Silicon, Unidirectional
PANASONIC

MA6Z100WK

Zener Diode, 10V V(Z), Silicon, Unidirectional
PANASONIC

MA6Z121

Silicon epitaxial planar type
PANASONIC

MA6Z718

Schottky Barrier Diodes (SBD)
PANASONIC

MA700

Silicon epitaxial planar type
PANASONIC

MA700

SMALL SIGNAL SCHOTTKY DIODES
BL Galaxy Ele

MA700

SILICON EPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES
SEMTECH

MA700

SCHOTTKY BARRIER DIODES
EIC

MA700

Small Signal Schottky Diodes
LGE

MA700.A.ABC.001

Pantheon Antenna 3in1 MA.700 Screw-Mount
TAOGLAS

MA700.A.ABC.001_18

Pantheon Antenna 3in1 MA.700 Screw-Mount
TAOGLAS

MA700.A.ABC.002

Pantheon Antenna 3in1 MA.700 Screw-Mount
TAOGLAS