MA6XD16 [PANASONIC]
Mixer Diode, L Band, Silicon, SC-74, 6 PIN;型号: | MA6XD16 |
厂家: | PANASONIC |
描述: | Mixer Diode, L Band, Silicon, SC-74, 6 PIN 光电二极管 |
文件: | 总3页 (文件大小:187K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Schottky Barrier Diodes (SBD)
MA6XD16
Silicon epitaxial planar type
Unit: mm
+0.20
–0.05
1.9 0.1
(0.95) (0.95)
2.90
For high speed switching
+0.10
–0.06
0.16
4
5
6
ꢀ Features
•
Fore elements are contained in one package, allowing high-
density mounting
3
2
1
•
•
High-frequency wave detection is possible
Mini type 6-pin package
0.30
1 : Anode 1
2 : Anode 2
Cathode 3
3 : Cathode 2
4 : Anode 3
5 : Cathode 1
Anode 4
ꢀ Absolute Maximum Ratings Ta = 25°C
Parameter
Reverse voltage (DC)
Peak reverse voltage
Forward current (DC) Single
Seesꢀ
Symbol
VR
Rati
Unit
V
VR
30
30
V
6 : Cathode 4
EIAJ : SC-74
Mini6-G2 Package
mA
20
Peak forward current Single
Serie
I
150
mA
Marking Symbol: M7A
Internal Connection
110
Junction temperatu
Storage temperate
Tj
125
°C
°C
4
5
6
1
Tst
to 125
3
2
ꢀ Elctrical CharacteristicTa = 25°C 3°C
eter
Revers
Forward vo
Symbol
IR
Conditions
Min
Typ
Max
30
Unit
µA
V
VR = 30 V
IF = 1 mA
VF1
VF2
Ct
0.3
1.0
IF = 30 mA
Terminal capacitance
Reverse recovery time *
VR = 1 V, f = 1 MHz
1.5
1.0
pF
ns
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
Detection efficiency
η
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. : trr measuring instrument
*
Bias Application Unit N-50BU
Input Pulse
tp
Output Pulse
trr
tr
t
10%
IF
t
A
90%
VR
Irr=1 mA
tp=2 µs
tr=0.35 ns
δ=0.05
IF=10 mA
IR=10 mA
RL=100 Ω
Pulse Generator
(PG-10N)
Wave Form Analyzer
(SAS-8130)
�
Rs=50 Ω
Ri=50 Ω
Publication date: August 2001
SKH00113AED
1
MA6XD16
IF VF
IR VR
VF Ta
103
104
103
102
10
1.0
0.8
0.6
0.4
2
Ta = 125°C
5°C
75°C 25°C
−20°C
102
Ta = 125°C
IF = 30 mA
10
1
°C
10 mA
10−1
10−2
1
1 mA
10−1
0
0.4
0.8
1.2
1.6
2.0
2.4
0
10
1
20
25
3
0
40
)
Ambient temperature Ta °C
80
120
160
(
)
V
( )
Rerse voltage VR V
(
Forward voltage VF
IR Ta
Ct VR
104
103
102
10
3.2
2.8
2.4
2.0
1.
0.4
0
f = 1
= 25°C
VR =
V
V
1
10−
−
0
5
10
15
20
25
30
0
40
80
0 160 00
( )
Reverse voltage VR V
(
)
Ambtemperure Ta °C
SKH00113AED
2
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book re subjet to change wnotice for modification and/or im-
provement. At the final stage of your design, purchasingouse f the roducts, therfor the most up-to-date Product
Standards in advance to make sure that the latest specifictions saisfy your requirements.
(5) When designing your equipment, comply with the rnge f absolute maximuing nd the guaranteed operating conditions
(operating power supply voltage and operating nvirnt etc.). Especiallyplee be creful not to exceed the range of absolute
maximum rating on the transient state, such as powpower-off and mode-witching. Otherwise, we will not be liable for any
defect which may arise later in your equpment
Even when the products are used withthe guarnteed values, ake nto te cosideration of incidence of break down and failure
mode, possible to occur to semicuctor roducts. Mesures the syems such as redundant design, arresting the spread of fire
or preventing glitch are recomin ordeto prevent pysicainjury, fire, social damages, for example, by using the products.
(6) Comply with the instructionfor ue in rder to prevent reakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mcanical stress) at the time of handlin, mounting or at customer's process. When using products for which
damp-proof packinis reqred, satisfy the condions, suh as shelf life and the elapsed time since first opening the packages.
(7) This book may e noreprinted or repwhther wholly or partially, without the prior written permission of Matsushita
Electric ndurial Co., Ltd.
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