MA774 [PANASONIC]
Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, DO-34, GLASS PACKAGE-2;
| 型号： | MA774 |
| 厂家： | 
PANASONIC |
| 描述： | Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, DO-34, GLASS PACKAGE-2 二极管 |
| 文件： | 总2页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky Barrier Diodes (SBD)
MA774
Silicon epitaxial planer type
Unit : mm
For super high-speed switching circuit
For small current rectification
φ0.45 max.
COLORED BAND
INDICATES
1
CATHODE
■ Features
●
●
●
●
Sealed in small glass package (DO-34)
5mm pitch insertion possible
IF(AV)=100mA rectification possible
Fast reverse recovery time trr, optimum for high-frequency rectifica-
tion
●
Low VF (forward rise voltage) with high rectification efficiency
2
φ1.75 max.
■ Absolute Maximum Ratings (Ta= 25˚C)
1 : Cathode
2 : Anode
JEDEC : DO-34
Parameter
Symbol
VR
Rating
Unit
V
Reverse voltage (DC)
30
Repetitive peak reverse voltage
Peak forward current
VRRM
IFM
30
V
300
mA
mA
A
Average forward current
Non-repetitive peak forward surge current
Junction temperature
IF(AV)
100
IFSM*
2
Tj
150
˚C
Storage temperature
Tstg
– 55 to +150
˚C
* 50Hz sine wave, one-cycle wave, high value (non-repetitive)
■ Electrical Characteristics (Ta= 25˚C)
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Condition
min
typ
max
15
0.55
Unit
µA
V
Symbol
IR
VR= 30V
IF=100mA
VF
VR = 0V, f=1MHz
IF = IR=100mA
30
pF
Ct
Reverse recovery time
1.5
ns
trr*
Irr= 10mA , RL=100Ω
Note 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on charge of a human body and leakage
from the equipment used.
2. Rated input/output frequency : 1000MHz
3. * trr measuring circuit
Bias Insertion
Unit N-50BU
■ Cathode Indication
Input Pulse
Output Pulse
Type No.
Color 1st Band
MA774
t
t
p
r
t
10%
Light Green
t
rr
I
F
t
A
90%
t =2µs
V
R
I =10mA
rr
I =100mA
p
F
t =0.35ns
r
δ=0.05
I =100mA
R
R =100Ω
L
Pulse Generator
PG-10N
R =50Ω
W.F.Analyzer
SAS-8130
i
R =50Ω
s
Schottky Barrier Diodes (SBD)
MA774
IF – VF
VF – Ta
IR – VR
103
104
103
102
10
1.0
0.8
0.6
0.4
0.2
0
Ta=150˚C
100˚C
100˚C 25˚C
102
Ta=150˚C
–20˚C
10
1
IF=100mA
25˚C
10–1
10–2
1
10mA
3mA
10–1
–40
0
40
80
120 160 200
0
5
10
(
Reverse voltage VR V
15
20
25
)
30
0
0.1
0.2
0.3
0.4
0.5
0.6
(
)
(
V
)
Ambient temperature Ta ˚C
Forward voltage VF
Ct – VR
IR – Ta
104
103
102
10
24
20
16
12
8
f=1MHz
Ta=25˚C
VR=30V
10V
5V
1
4
0
10–1
–40
0
5
10
15
20
25
30
0
40
80
120 160 200
(
)
(
V
)
Ambient temperature Ta ˚C
Reverse voltage VR
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