MA776 [PANASONIC]

Rectifier Diode, Schottky, 1 Element, Silicon, DO-34,;


型号：	MA776
厂家：	PANASONIC
描述：	Rectifier Diode, Schottky, 1 Element, Silicon, DO-34, 二极管
文件：	总3页 (文件大小：155K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Schottky Barrier Diodes (SBD)

2SK1606

MA776

Silicon epitaxial planer type

Unit : mm

For the switching circuit

ø0.45 max.

COLORED BAND

INDICATES

■ Features

●

Sealed in small glass package (DO-34)

CATHODE

5mm pitch insertion possible

Low forward rise voltage V_Fand satisfactory wave detection effi-

ciency

1st Band

2nd Band

●

Temperature coefficient of forward characteristic is small.

Extremely low reverse current I_R

V_R(DC value)= 40V guaranteed

ø1.75 max.

■ Absolute Maximum Ratings (Ta= 25˚C)

1 : Cathode

2 : Anode

JEDEC : DO-34

Parameter

Reverse voltage (DC)

Repetitive peak reverse voltage

Peak forward current

Average forward current

Junction temperature

Storage temperature

Symbol

V_R

Rating

Unit

V_RRM

I_FM

150

˚C

I_F

T_j

125

T_stg

– 55 to +125

˚C

■ Electrical Characteristics (Ta= 25˚C)

Parameter

Symbol

I_R

Condition

min

typ

max

200

Unit

Reverse current (DC)

V_R= 40V

I_F=1mA

V_F1

V_F2

C_t

0.4

Forward voltage (DC)

Terminal capacitance

Reverse recovery time

I_F= 30mA

V_R= 1V, f=1MHz

1.3

I_F= I_R=100mA

t_rr*

I_rr= 1mA , R_L=100Ω

V_in= 3V_(peak), f= 30MHz

R_L= 3.9kΩ, C_L=10pF

Detection efficiency

Note 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on charge of a human body and leakage

from the equipment used.

2. Rated input/output frequency : 2000MHz

3. * t_rrmeasuring circuit

Bias Insertion

Unit N-50BU

■ Cathode Indication

Input Pulse

Output Pulse

Type No.

1st Band

2nd Band

MA776

Silver

10%

Color

Yellow

90%

I =1mA

t =2µs

I =10mA

t =0.35ns

δ=0.05

I =10mA

R =100Ω

Pulse Generator

PG-10N

R =50Ω

W.F.Analyzer

SAS-8130

R =50Ω

Schottky Barrier Diodes (SBD)

MA776

I_F– V_F

V_F– Ta

I_R– V_R

10³

10²

1.0

0.8

0.6

0.4

0.2

75˚C 25˚C

Ta=125˚C

75˚C

10²

I_F=30mA

10mA

Ta=125˚C

–20˚C

10^–1

10^–2

10^–3

25˚C

1mA

10^–1

10^–2

0.2

0.4

0.6

0.8

1.0

1.2

–40

120 160 200

(

Reverse voltage V_RV

)

(

)

(

)

Forward voltage V_F

Ambient temperature Ta ˚C

C_t– V_R

I_R– Ta

10²

2.4

2.0

1.6

1.2

0.8

0.4

f=1MHz

Ta=25˚C

V_R=40V

10V

10^–1

10^–2

10^–3

–40

120 160 200

(

)

(

)

Reverse voltage V_R

Ambient temperature Ta ˚C

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other

company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

– Any applications other than the standard applications intended.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

Electric Industrial Co., Ltd.

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