MA7D50 [PANASONIC]

Silicon epitaxial planar type (cathode common); 硅外延平面型（阴极常见）


型号：	MA7D50
厂家：	PANASONIC
描述：	Silicon epitaxial planar type (cathode common) 硅外延平面型（阴极常见）
文件：	总3页 (文件大小：67K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Schottky Barrier Diodes (SBD)

MA3D750, MA3D750A (MA7D50, MA7D50A)

Silicon epitaxial planar type (cathode common)

Unit: mm

For switching mode power supply

4.6 0.2

9.9 0.3

2.9 0.2

ꢀ Features

φ 3.2 0.1

•

Low forward voltage V_F

High dielectric breakdown voltage: > 5 kV

Easy-to-mount, due to its V cut lead end

TO-220D-A1 package

1.4 0.2

1.6 0.2

2.6 0.1

0.8 0.1

0.55 0.15

ꢀ Absolute Maximum Ratings T_a= 25°C

Parameter

Symbol

Rating

Unit

2.54 0.30

5.08 0.50

Repetitive peak MA3D750

reverse-voltage MA3D750A

Average forward current

V_RRM

1 : Anode

2 : Cathode

3 : Anode

I_F(AV)

I_FSM

Non-repetitive peak forward-

surge-current ^*

120

TO-220D-A1 Package

Internal Connection

Junction temperature

Storage temperature

T_j

−40 to +125

°C

T_stg

Note) : Half sine wave; 10 ms/cycle

ꢀ Electrical Characteristics T_a= 25°C

Parameter

Reverse current (DC) MA3D750

MA3D750A

Symbol

Conditions

Min

Typ

Max

Unit

I_R

V_R= 40 V, T_C= 25°C

V_R= 45 V, T_C= 25°C

Forward voltage (DC)

High voltage rectification

V_F

I_F= 5 A, T_C= 25°C

0.55

R_th(j-c)

Smoothed current (between junction and case)

°C/W

Note) Rated input/output frequency: 150 MHz

Note) The part number in the parenthesis shows conventional part number.

Publication date: August 2001

SKH00043AED

MA3D750, MA3D750A

I_F V_F

I_R V_R

V_F T_a

10²

10⁵

10⁴

10³

10²

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

T_a= 125°C

75°C

25°C

75°C

25°C

I_F= 10 A

−20°C

10⁻¹

5 A

1 A

10⁻²

10⁻³

0.2

0.4

0.6

0.8

1.0

1.2

−40

120 160 200

( )

(

)

Forward voltage V_F

Reverse voltage V_R

Ambient temperature T_a°C

I_R T_a

I_R V_R

P_D(AV) I_F(AV)

10⁵

10⁴

10³

10²

10⁵

10⁴

10³

10²

t₀

t₁

V_R= 45 V

T_a= 125°C

20 V

10 V

t₀/ t₁= 1/6

75°C

25°C

1/3

1/2

−40

120 160 200

( )

Average forward current I_F(AV)A

(

)

Ambient temperature T_a°C

( )

Reverse voltage V_R

I_F(AV) T_C

t₀

t₁

t₀/ t₁= 1/2

1/3

1/6

100 120 140

(

)

Case temperature T_C°C

SKH00043AED

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A. These materials are intended as a reference to assist customers with the selection of Panasonic

semiconductor products best suited to their applications.

Due to modification or other reasons, any information contained in this material, such as available

product types, technical data, and so on, is subject to change without notice.

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2001 MAR

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