MA7D52 [PANASONIC]
Silicon epitaxial planar type (cathode common); 硅外延平面型(阴极常见)型号: | MA7D52 |
厂家: | PANASONIC |
描述: | Silicon epitaxial planar type (cathode common) |
文件: | 总3页 (文件大小:68K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Schottky Barrier Diodes (SBD)
MA3D752, MA3D752A (MA7D52, MA7D52A)
Silicon epitaxial planar type (cathode common)
Unit : mm
4.6 0.2
For switching power supply
9.9 0.3
2.9 0.2
I Features
φ 3.2 0.1
•
•
Low forward rise voltage VF
TO-220D (Full-pack package) with high dielectric breakdown
voltage > 5.0 kV
1.4 0.2
1.6 0.2
2.6 0.1
•
Easy-to-mount, caused by its V cut lead end
0.8 0.1
0.55 0.15
I Absolute Maximum Ratings Ta = 25°C
2.54 0.3
3
5.08 0.5
1
2
Parameter
Symbol
VRRM
Rating
40
Unit
V
MA3D752
MA3D752A
MA3D752
MA3D752A
Repetitive peak
reverse voltage
45
1 : Anode
2 : Cathode
3 : Anode
VRSM
40
V
Non repetitive peak
reverse voltage
45
TO-220D Package
Average forward current
IF(AV)
IFSM
20
A
A
Internal Connection
Non-repetitive peak forward
surge current*
120
Junction temperature
Storage temperature
Tj
−40 to +125
−40 to +125
°C
°C
Tstg
1
2
3
Note)
* : Half sine-wave; 10 ms/cycle
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
IR
Conditions
Min
Typ
Max
5
Unit
mA
Reverse current (DC)
MA3D752
VR = 40 V, TC = 25°C
VR = 45 V, TC = 25°C
MA3D752A
5
0.55
3
Forward voltage (DC)
Thermal resistance
VF
IF = 10 A, TC = 25°C
V
Rth(j-c)
Direct current (between junction and case)
°C/W
Note) Rated input/output frequency: 100 MHz
Note) The part number in the parenthesis shows conventional part number.
632
Schottky Barrier Diodes (SBD)
MA3D752, MA3D752A
IF VF
IR VR
VF Ta
2
2
10
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Ta = 125°C
75°C 25°C
−20°C
Ta = 125°C
10
10
75°C
IF = 20 A
1
1
25°C
10 A
5 A
−1
−1
10
10
10
10
−2
−3
−2
−3
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
( )
Reverse voltage VR V
20
30
40
50
60
−40
0
40
80
120 160 200
( )
V
Forward voltage VF
(
)
Ambient temperature Ta °C
IR Ta
PD(AV) IF(AV)
Ct VR
2
10
1 600
1 400
1 200
1 000
800
600
400
200
0
40
f = 1 MHz
Ta = 25°C
VR = 45 V
t0
t1
20 V
10 V
10
30
20
10
0
1
t0 / t1 = 1/6
−1
10
1/3
1/2
DC
−2
−3
10
10
−40
0
40
80
120 160 200
0
10
20
30
40
50
60
0
4
8
12
16
20
24
)
(
)
Ambient temperature Ta °C
( )
V
(
Average forward current IF(AV) A
Reverse voltage VR
IF(AV) TC
32
28
24
20
16
12
8
t0
t1
t0 / t1 = 1/2
1/3
DC
1/6
4
0
20
40
60
80
100 120 140
(
)
Case temperature TC °C
633
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and semiconductors described in this material
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istics and applied circuit examples of the products. It does not constitute the warranting of industrial
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struments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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harm the human body.
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make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
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Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
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2001 MAR
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