NP043A6 [PANASONIC]

Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN;


型号：	NP043A6
厂家：	PANASONIC
描述：	Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN 开关光电二极管晶体管
文件：	总3页 (文件大小：343K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Composite Transistors

NP043A6

Silicon NPN epitaxial planar type (Tr1)

Silicon PNP epitaxial planar type (Tr2)

Unit: mm

For digital circuits

0.12^+0.03

0.02

 Features

0 to 0.02



Reduction of the mounting area and assembly cost by one half



Maximum package height (0.4 mm) contributes to develop thinner equipments

(0.35) (0.35)

 Basic Part Number



UNR31A6 + UNR32A6

1.00±0.05

Display at No.1 lead

 Absolute Maximum Ratings T_a= 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

(Emitter open)

V_CBO

1: Emitter (Tr1)

4: Emitter (Tr2)

5: Base (Tr2)

2: Base (Tr1)

Collector-emitter voltage

(Base open)

Tr1

Tr2

3: Collector (Tr2)

6: Collector (Tr1)

V_CEO

I_C

SSSMini6-F1 Package

Collector current

Marking Symbol: 7U

Collector-base voltage

(Emitter open)

V_CBO

Internal Connection

−

Collector-emitter voltage

(Base open)

V_CEO

−

Tr2

Tr1

Collector current

I_C

P_T

T_j

−

125

Total power dissipation ^*

Overall Junction temperature

Storage temperature

125

stg

–55 to +125

Note) : Measuring on substrate at 17 mm 10 mm 1 mm

Publication date: February 2005

SJJ00312AED

NP043A6

 Electrical Characteristics T_a= 25

C±3



Tr1

Parameter

Symbol

V_CBOI_C= 10 µA, I_E= 0

V_CEOI_C= 2 mA, I_B= 0

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open) ^*

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Output voltage high-level

I_CBO

I_CEO

I_EBO

h_FE

V_CB= 50 V, I_E= 0

V_CE= 50 V, I_B= 0

V_EB= 6 V, I_C= 0

0.1

0.5

µA

0.01

460

0.25

V_CE= 10 V, I_C= 5 mA

160

4.9



V_CE(sat)I_C= 10 mA, I_B= 0.3 mA

V_OH

V_OL

R₁

V_CC= 5 V, V_B= 0.5 V, R_L= 1 kΩ

Output voltage low-level

V_CC= 5 V, V_B= 2.5 V, R_L= 1 kΩ

0.2

Input resistance

—30%

4.7

+30%

kΩ

MHz

Transition frequency

f_T

V_CB= 10 V, I_E

−

2 mA, f = 200 MHz

150

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Pulse measurement



Tr2

Parameter

Symbol

Conditions

Min

–50

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

V_CBOI_C= –10 µA, I_E= 0

V_CEOI_C= –2 mA, I_B= 0

I_CBO

I_CEO

I_EBO

h_FE

V_CB= –50 V, I_E= 0

V_CE= –50 V, I_B= 0

V_EB= –6 V, I_C= 0

– 0.1

– 0.5

– 0.01

460

µA



V_CE= –10 V, I_C= –5 mA

160

–4.9

Collector-emitter saturation voltage

Output voltage high-level

V_CE(sat)I_C= –10 mA, I_B= – 0.3 mA

– 0.25

V_OH

V_OL

R₁

V_CC= –5 V, V_B= – 0.5 V, R_L= 1 kΩ

V_CC= –5 V, V_B= –2.5 V, R_L= 1 kΩ

Output voltage low-level

– 0.2

Input resistance

—30%

4.7

+30%

kΩ

MHz

Transition frequency

f_T

V_CB= –10 V, I_E= 1 mA, f = 200 MHz

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

SJJ00312AED

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples

of the products, and no license is granted under any intellectual property right or other right owned by our company or any other

company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other

company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office

equipment, communications equipment, measuring instruments and household appliances).

Consult our sales staff in advance for information on the following applications:

– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support

systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ucts may directly jeopardize life or harm the human body.

– Any applications other than the standard applications intended.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-

provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

Standards in advance to make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

Electric Industrial Co., Ltd. Industrial Co., Ltd.

相关型号：