NP04401 [PANASONIC]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN;型号: | NP04401 |
厂家: | PANASONIC |
描述: | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, SSSMINI6-F1, 6 PIN 放大器 光电二极管 晶体管 |
文件: | 总3页 (文件大小:420K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Composite Transistors
Silicon PNP epitaxial planar type
For general amplification
Unit: mm
0.12+0.03
0.02
Features
6
5
4
Two elements incorporated into one package (Each transistor is separated)
SSSMini type package, reduction of the mounting area and assembly cost
Maximum package height (0.4 mm) contributes to develop thinner equipments
0 to 0.02
1
2
3
(0.35) (0.35)
Basic Part Number
1.00±0.05
Display at No.1 lead
2SB0709A
2
Absolute Maximum Ratings T= 25C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Symbol
Rating
60
Unit
V
VCBO
VCEO
VEBO
IC
1: Emitter (Tr1)
4: Emitter (Tr2)
5: Base (Tr2)
V
50
2: Base (Tr1)
V
7
3: Collector (Tr2)
6: Collector (Tr1)
SSSMini6-F1 Package
mA
mA
mW
C
100
200
125
Peak collector current
ICP
Marking Symbol: 5K
Total power dissipation
Junction temperature
PT
Internal Connection
Tj
125
(C1) (B2) (E2)
6
5
4
Storage temperature
Tstg
55 to +125
C
Note) : Measuring on substrate at 17 mm 10 mm 1 mm
Tr2
Tr1
1
2
3
(E1) (B1) (C2)
Electrical Characteristics T= 25C±3C
Parameter
Symbol
Conditions
Min
60
50
7
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
VCBO I10 µA, I= 0
VCEO I2 mA, IB = 0
VEBO I10 µA, IC = 0
V
V
ICBO
ICEO
hFE
VCB 20 V, I= 0
V10 V, IB = 0
V10 V, IC 2 mA
0.1
100
390
µA
µA
V
180
Collector-emitter saturation voltage
VCE(sat) I100 mA, IB 10 mA
0.3
2.7
0.5
Collector output capacitance
Cob
VCB 10 V, IE = 0, f = 1 MHz
pF
(Common base, input open circuited)
Transition frequency
fT
VCB 10 V, IE = 1 mA, f = 200 MHz
80
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Pulse measurement
Publication date: November 2005
SJJ00343AED
1
NP04401
PT T
IC V
IC VCE
−100
−80
−80
VCE = −10 V
IB = −300 µA
−250 µA
Ta = 25°C
120
80
−60
−40
−20
0
−200 µA
Ta = 85°C
−60
25°C
−150 µA
−100 µA
−40
−20
0
−25°C
40
−50 µA
0
0
0
− 0.4
− 0.8
−1.2
40
80
120
0
−4
−8
−12
Base-emitter voltage VBE (V)
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
VCE(sat) IC
hFE IC
Cob VCB
10
−1
400
300
200
f = 1 MHz
Ta = 25°C
IC /IB = 10
V
CE = −10 V
Ta = 85°C
25°C
−25°C
−10−1
Ta = 85°C
25°C
−25°C
100
0
−10−2
−10−1
1
−102
−103
−102
0
−10
−20
−30
−40
−1
−10
−1
−10
Collector-base voltage VCB (V)
Collector current IC (mA)
Collector current IC (mA)
2
SJJ00343AED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
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– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd. Industrial Co., Ltd.
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