ON1108S [PANASONIC]
Transistor Output Slotted Switch, 1-Channel, 3mm Slot Width, PISTR104-006, 4 PIN;
| 型号： | ON1108S |
| 厂家： | 
PANASONIC |
| 描述： | Transistor Output Slotted Switch, 1-Channel, 3mm Slot Width, PISTR104-006, 4 PIN 输出元件 光电 |
| 文件： | 总4页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transmissive Photosensors (Photo lnterrupters)
CNZ1102 (ON1102), CNZ1108 (ON1108)
Photo Interrupters
CNZ1102
Unit: mm
For contactless SW, object detection
ark for
iicating
LEside
25.±±±.ꢀ5
1ꢀ.±±±.ꢀ
ꢀ.±±±.2
Devi
center
■ Overview
CNZ1102 and CNZ1108 are a photocoupler in which a high
efficiency GaAs infrared light emitting diode is used as the ight
emitting element, and a high sensitivity phototransistor is used athe
light detecting element. The two elements are arranged so as to face
each other, and objects passing between them are deted.
2-±.45±±.2
6±±.ꢀ
19.±±±.2
2
2
1
ꢀ
4
■ Features
• Highly precise position detection: 1.2 mm
• Large output current
1: Anode
2: Cathode
3: Collector
4: Emitter
• Fast response: tr , tf = 4 µs (typ.) (CNZ1102)
6 µs (ty(CNZ1108)
PISTR104-005 Package
(Note) dimension at the root of leads
*
• Small output current variatainst change itempeature
• Small package used osavmouing space (CZ110)
CNZ1108
Unit: mm
Mark for indicating
LED side
■ Absolute Maximum Ratings Ta = 25°C
1ꢀ.±±±.ꢀ
ꢀ.±±±.2
ꢀ.5±±.2
Device
Parmeter
mbol Rating
Unit
V
Center
evervoltage
3
Input (Light
emitng dioForard current
Power dissipaon *
50
75
30
mA
mW
V
1
PD
4- ±.45±±.2
Oput (to Collector-mittevoltagVCEO
*9.4±±.ꢀ
*2.54±±.2
transior)
(Base open)
2
1
ꢀ
4
Eitter-collector oltage
Colleor current
VECO
IC
5
20
V
mA
mW
°C
1: Anode
2: Cathode
3: Collector
4: Emitter
2
ector power dissipation *
PC
100
Temprating ambient temerature Topr
Storage temperature
Note) 1: Input power derating ratio is 1.0 mW/°C at T ≥ 25°C.
−25 to +85
PISTR104-006 Package
(Note) is dimension at the root of leads
Tstg −30 to 100
°C
*
*
Internal Connection
a
2: Output power derating ratio is 1.33 mW/°C at T ≥ 25°C.
*
a
2
3
4
1
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2004
SHG00027BED
1
CNZ1102, CNZ1108
■ Electrical-Optical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VF
Conditions
Min
Typ
Max
1.5
10
Unit
V
Forward voltage
Reverse current
Terminal capacitance
IF = 50 mA
VR = 3 V
1.2
Input
charac-
teristics
IR
µA
pF
Ct
VR = 0 V, f = 1 MHz
VCE = 10 V
50
5
Collector-emitter cutoff current
(Base open)
ICEO
200
nA
Output
charac-
teristics
Collector-emitter capacitance
CC
IC
VCE = 10 V, f = 1 MHz
VCE = 10 V, IF = 20 mA
pF
mA
V
2
*
Collector current
Collector-emitter
2.0
20.0
0.4
Transfer
charac-
CNZ1102 VCE(sat) IF = 50 mA, IC = 1 mA
teristics saturation voltage
CNZ1108
CNZ1102
CNZ1108
CNZ1102
CNZ1108
IF = 50 mA, IC = 0.1 mA
0.4
1
Rise time *
tr
tf
VCC = 10 V, IC = 5 mA, RL = 100 Ω
VCC = 10 V, IC = 1 mA, RL = 100 Ω
VCC = 10 V, IC = 5 mA, RL = 100 Ω
VCC = 10 V, IC = 1 mA, RL = 100 Ω
4.0
6.0
4.0
6.0
µs
µs
1
Fall time *
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3. 1: Switching time measurement circuit
*
Sig. in
VCC
tr: Rise time
tf: Fall time
(Input pulse)
90%
10%
(Output pulse)
Sig. out
tr
tf
RL
50Ω
2: Rank classification
*
Rank
Q
R
S
No-rank
IC (mA)
2.0 to 5.0
4.0 to 10.0
7.0 to 20.0
> 2.0
IF , IC Ta
IF VF
IC IF
60
50
40
30
20
10
0
60
50
40
30
20
10
0
102
10
VCE = 10 V
Ta = 25°C
Ta = 25°C
IF
1
IC
10−1
10−2
10−1
102
−25
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2.0
2.4
1
10
Forward voltage VF (V)
Forward current IF (mA)
Ambient temperature Ta (°C)
SHG00027BED
2
CNZ1102, CNZ1108
VF Ta
IC VCE
∆IC Ta
1.6
1.2
0.8
0.4
0
102
10
160
120
80
40
0
VCE = 10 V
IF = 20 mA
Ta = 25°C
IF = 30 mA
IF = 50 mA
20 mA
10 mA
10 mA
1
10−1
10−2
10−1
1
10
102
−40
0
40
80
−40
0
40
80
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Ambient temperature Ta (°C)
ICEO Ta
tr IC
∆IC d
10
103
102
10
100
80
60
40
20
0
VCC = 10 V
Ta = 25°C
Criterion 0
d
1
10−1
RL = 1 kΩ
500 Ω
100 Ω (CNZ1108)
VCE = 24 V
10 V
10−2
100 Ω (CNZ1102)
Sig. in VCC
1
V1
10−3
10−4
Sig.
90%
10%
out
V2
V1
50 Ω
V2
td
RL
tr
1
tf
10−1
10−2
10−1
10
0
1
2
3
4
5
6
−40
0
40
80
Ambient temperature Ta (°C)
Collector current IC (mA)
Distance d (mm)
SHG00027BED
3
Caution for Safety
¢ This product contains Gallium Arsenide (GaAs).
GaAs powder and vapor are hazardous to human health if inhaled or
ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
product. Follow related laws and ordinances for disposal. The product
should be excluded from general industrial waste or household garbage.
DANGER
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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Electric Industrial Co., Ltd.
If you have any inquiries or questions about this book or our semiconductor products, please contact one
of our sales offices listed on the back or Semiconductor Company's Department.
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