ON2152 [PANASONIC]

Reflective photosensor; 反射型光电传感器


型号：	ON2152
厂家：	PANASONIC
描述：	Reflective photosensor 反射型光电传感器光电传感器
文件：	总3页 (文件大小：93K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Reflective Photosensors (Photo Reflectors)

CNZ2152 (ON2152)

Reflective photosensor

Non-contact point SW, object sensing

Unit: mm

Mark for

indicating

LED side

φ1.5

■ Overview

CNZ2152 is a photosensor detecting the change of reflective light

in which a high efficiency GaAs infrared light emitting diode is used

as the light emitting element, and a high sensitivity Si phototransistor

is used as the light detecting element. The two elements are located

parallel in the same direction and objects are detected when passing

in front of the device.

16.0 0.ꢀ

+0.1

14.0

-0.2

φ2.2 0.2

■ Features

• Fast response

+0.1

• High sensitivity

• High SN ratio

φ0.9

0.2

4-φ0.45

■ Applications

(10.0)

(2.54)

• Detection of paper, film and cloth • Optical mark reading

ꢀ

1: Cathode

2: Anode

3: Emitter

4: Collector

• Detection of coin and bill

• Detection of position and edge

• Start, end mark detection of magnetic tape

■ Absolute Maximum Ratings T_a= 25°C

PRSTR104-001 Package

(Note) ( ) Dimension is reference

Parameter

Input (Light Reverse voltage

emitting diode) Forward current

Power dissipation ^*

Symbol Rating

Unit

V_R

I_F

100

150

P_D

Output (Photo Collector-emitter voltage V_CEO

transistor)

(Base open)

Emitter-collector voltage V_ECO

(Base open)

Collector current

Collector power dissipation ^*

I_C

150

°C

Note) 1: Input power derating ratio is

P_C

2.0 mW/°C at T_a≥ 25°C.

Temperature Operating ambient temperature T_opr

Storage temperature

−25 to +85

2: Output power derating ratio is

T_stg−30 to +100

°C

2.0 mW/°C at T_a≥ 25°C.

■ Electrical-Optical Characteristics T_a= 25°C 3°C

Parameter

Symbol

Conditions

Min

Typ

Max

1.50

Unit

Input

Forward voltage

V_F

I_R

I_F= 100 mA

V_R= 5 V

1.25

characteristics Reverse current

µA

Output

Collector-emitter cutoff current I_CEO

V_CE= 10 V

0.05

2.00

characteristics (Base open)

Transfer

Collector current ^*

I_C

V_CC= 5 V, I_F= 20 mA, R_L= 100 Ω

0.8

3.0

µA

characteristics

500

Collector-emitter saturation voltage V_CE(sat)I_F= 100 mA, I_C= 1 mA

0.6

Rise time

Fall time

t_r

t_f

V_CC= 10 V, I_C= 1 mA, R_L= 100 Ω

µs

Note) 1. Input and output are handled electrically.

2. This product is not designed to withstand radiation

3. 1: Output current measurement circuit (Ambient light is shut off completely)

V_CC

I_F

I_C

2: White paper (reflective ratio 90%)

d = 5 mm

3: Tracing paper (paper SM-1 for 2nd original paper)

R_L

Test Paper

Note) The part number in the parenthesis shows conventional part number.

Publication date: April 2004

SHG00052BED

CNZ2152

I_F, I_C T_a

I_F V_F

V_F T_a

120

100

1.6

1.2

0.8

0.4

T_a= 25°C

I_F

100

I_F= 100 mA

50 mA

I_C

−25

−40

100

0.4

0.8

1.2

1.6

2.0

2.4

Forward voltage V_F(V)

Ambient temperature T_a(°C)

I_C I_F

I_C V_CE

∆I_C T_a

10²

160

120

V_CC= 5 V R_L= 100 Ω

T_a= 25°C

I_F= 100 mA

T_a= 25°C

V_CC= 5 V

I_F= 20 mA

R_L= 100 Ω

(1) White paper

80 mA

60 mA

50 mA

(Reflective ratio 90%)

(2) Tracing paper

(Paper SM-1 for 2nd

original paper)

40 mA

30 mA

20 mA

(1)

(2)

10 ⁻¹

10 mA

10 ⁻²

10 ⁻¹

10²

−40

Forward current I_F(mA)

Collector-emitter voltage V_CE(V)

Ambient temperature T_a(°C)

I_CEO T_a

t_r I_C

I_C d

10³

10²

V_CC= 10 V

T_a= 25°C

V_CC= 5 V

T_a= 25°C

I_F= 20 mA

R_L= 100 Ω

10²

R_L= 1 kΩ

100 Ω

Mirror

V_CE= 25 V

10 V

White paper

(Reflective ratio 90%)

Sig. in

V_CC

V₁

V₂

10 ⁻¹

Sig.

90%

10%

out

V₁

50 Ω

V₂

t_d

R_L

t_r

t_f

10 ⁻²

−40

10 ⁻¹

10 ⁻²

10 ⁻¹

Ambient temperature T_a(°C)

Collector current I_C(mA)

Distance d (mm)

SHG00052BED

Caution for Safety

■ This product contains Gallium Arsenide (GaAs).

GaAs powder and vapor are hazardous to human health if inhaled or

ingested. Do not burn, destroy, cut, cleave off, or chemically dis-

solve the product. Follow related laws and ordinances for disposal.

The product should be excluded form general industrial waste or

household garbage.

DANGER

Request for your special attention and precautions in using the technical information

and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of

the products or technical information described in this material and controlled under the "Foreign Exchange

and Foreign Trade Law" is to be exported or taken out of Japan.

(2) The technical information described in this material is limited to showing representative characteristics and

applied circuits examples of the products. It neither warrants non-infringement of intellectual property right

or any other rights owned by our company or a third party, nor grants any license.

(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical

information as described in this material.

(4) The products described in this material are intended to be used for standard applications or general elec-

tronic equipment (such as office equipment, communications equipment, measuring instruments and house-

hold appliances).

Consult our sales staff in advance for information on the following applications:

• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-

tion equipment, life support systems and safety devices) in which exceptional quality and reliability are

required, or if the failure or malfunction of the products may directly jeopardize life or harm the human

body.

• Any applications other than the standard applications intended.

(5) The products and product specifications described in this material are subject to change without notice for

modification and/or improvement. At the final stage of your design, purchasing, or use of the products,

therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-

tions satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-

ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not

be liable for any defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of

break down and failure mode, possible to occur to semiconductor products. Measures on the systems such

as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent

physical injury, fire, social damages, for example, by using the products.

(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life

and amount of time let standing of unsealed items) agreed upon when specification sheets are individually

exchanged.

(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written

permission of Matsushita Electric Industrial Co., Ltd.

2003 SEP

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