PN312D-(N) [PANASONIC]
PIN Photodiode, PLASTIC PACKAGE-4;
| 型号： | PN312D-(N) |
| 厂家： | 
PANASONIC |
| 描述： | PIN Photodiode, PLASTIC PACKAGE-4 光电 |
| 文件： | 总3页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PIN Photodiodes
PNZ312DN (PN312D-(N))
Silicon PIN Dual Photodiode
Unit : mm
5.0 0.1
2.54 0.1
4
1.8 0.3
For optical information systems
1.0 0.2
3
■ Features
û
10
•
•
•
•
•
Fast response: tr, tf = 10 ns (typ.)
Good photo current linearity
Low dark current: ID = 20 nA (max.)
Small size plastic package (flat type)
Adoption of visible light cutoff resin
B
A
û
10
1.0
+0.1
0.2
Ð0.05
-0.5 0.
0.6
1
2
10
û
10û
■ Applications
•
•
•
•
Auto focus sensor for still cameras and vdeo ras etc.
Distance measuring systems
Position sensor for automatic embllines
Eye sensor for industrial ro
5û
5û
1 : Anode A
2 : Common cathode
3 : Anode B
4 : Common cathode
Note) The PN312D-(N) package consists of a visible
light cutoff resin. Therefore the chips (A and B) shown
in the drawing cannot actually be seen.
■ Absolute Maimum Ratings Ta = 25°C
Parameter
Symbo
Rangs
Unit
V
■ Dimensions of detection area
Reverse oltae
VR
30
Unit : mm
3.5
1.6
1.6
0.04
wer issip
PD
30
mW
°C
Operaing atemperature
Stoage temperature
Topr
Tstg
−25 ∼ +85
−30 ∼ +100
°C
A
B
■ Electrtical Characteristics Ta = 25°C 3°C
Reverse volt
Symbol
Conditons
min
typ
max
Unit
V
VR
ID
IR = 10 µA
VR = 10 V
30
Dark current
20
nA
µA
nm
ns
3
1
Photo current *
IL
VR = 10 V, L = 1000 lx
8
12
940
10
5
Peak sensitivity wavelength
λP
tr, tf
Ct
VR = 10 V
2
Response time *
VR = 0 V, RL = 1 kΩ
VR = 10 V, f = 1 MHz
Capacitance between pins
Acceptance half angle
pF
°
θ
Measured from the optical axis to the half power point
65
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. The indicated values for absolute maximum ratings and electro-optical characteristics are the values corresponding to
individual elements.
3. *1: Measurements were made using a white tungsten lamp (color temperature T = 2856K) as a light source.
*2: Semiconductor laser light source (λ = 900 nm )
+10 V
*3: Photo current measurement circuit
R1 = R2
R1
R2
Note) The part number in the parenthesis shows conventional part number.
Publication date: June 2007
SHE00032BED
1
PNZ312DN
PD Ta
IL L
∆IL Ta
40
30
20
10
0
10 3
160
140
120
100
80
VR = 10 V
L = 1000 lx
T = 2856K
VR = 10 V
Ta = 25°C
T = 2856K
10 2
10
60
1
40
10 −1
−25
0
20
40
60
80
100
10
10 2
10 3
−40 −20
0
20
40
60
80 100
Ambient temperature Ta (°C)
uminance (lx)
Ambient temperature Ta (°C )
ID VR
ID Ta
Spectral sensitivity characteristics
1
10
100
VR = 10 V
Ta = 25°C
VR = 0 V
Ta =
80
60
40
20
0
1
10 −1
10 −2
10 −2
−40 −20
0
4
12 120 24 8 32
0
20
40
60
80 100
20
400
600
800
1000 1200
ltage VR (V)
Ambient temperature Ta (°C )
Wavelength λ (nm)
Direcharacteristis
Ct VR
tr , tf RL
100
80
60
40
20
0
10 3
104
f = 1 MHz
T= 25°C
Sig.in VR = 10 V
90%
10%
Sig.
out
RL
td
10 2
10
10 3
50 Ω
tr
tf
10 2
10
1
Ta = 25°C
10 2
10 −1
1
80
40
0
40
80
10 −1
1
10
10 2
10 −1
1
10
Angle θ (°)
Reverse voltage VR (V)
External load resistance RL (kΩ)
SHE00032BED
2
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic contrl equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability equired, or if the failure or malfunction of the prod-
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