PUB4118 [PANASONIC]

Power Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10;


型号：	PUB4118
厂家：	PANASONIC
描述：	Power Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 开关晶体管
文件：	总3页 (文件大小：80K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Power Transistor Arrays

PUB4118 (PU4118)

Silicon NPN triple diffusion planar type

For power amplification and switching

Unit: mm

25.3 0.2

4.0 0.2

■ Features

• High forward current transfer ratio h_FE

• Satisfactory linearity of forward current transfer ratio h_FE

• NPN 4 elements

0.8 0.25

0.5 0.15

1.0 ^0.25

2.54 0.2

■ Absolute Maximum Ratings T_C= 25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

9 × 2.54 = 22.86 0.25

1: Emitter

2: Base

3: Collector

4: Base

5: Collector

6: Base

7: Collector

8: Base

9: Collector

10: Emitter

200

C 1.5 0.5

150

1 2 3 4 5 6 7 8 9 10

Peak collector current

Base current

I_CP

2.5

0.1

I_B

SIP10-A1 Package

Collector power dissipation

T_a= 25°C

P_C

3.5

Junction temperature

T_j

150

°C

Storage temperature

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

V_CEO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

I_C= 25 mA, I_B= 0

150

V_CB= 200 V, I_E= 0

V_EB= 6 V, I_C= 0

100

µA



I_EBO

h_FE

V_CE= 4 V, I_C= 0.2 A

500

2 000

1.0

V_CE(sat)I_C= 0.5 A, I_B= 0.02 A

f_TV_CE= 4 V, I_C= 0.1 A, f = 10 MHz

MHz

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

■ Internal Connection

Note) The part numbers in the parenthesis show conventional part number.

Publication date: March 2004

SJK00008AED

PUB4118

P_C T_a

I_C V_CE

V_CE(sat) I_C

0.5

0.4

0.3

0.2

0.1

( )

T_C= T_a

I_C/I_B= 25

T_C= 25°C

With a 50 × 50 × 2 mm

Al heat sink

Without heat sink

( )

I_B= 400 µA

( )

T_C= 100°C

25°C

350 µA

300 µA

250 µA

200 µA

−25°C

150 µA

100 µA

( )

0.1

0.01

( )

50 µA

20 40 60 80 100 120 140 160

0.01

0.1

(

)

Ambient temperature T_a°C

(

)

(

)

Collector current I_C

Collector-emitter voltage V_CE

V_BE(sat) I_C

h_FE I_C

f_T I_C

10⁴

10³

10²

10⁴

10³

10²

V_CE= 4 V

_C/I_B= 25

V_CE= 4 V

T_C= 25°C

T_C= 100°C

−25°C

25°C

T_C= 100°C

−25°C

0.1

0.01

0.1

0.01

0.1

( )

Collector current I_CA

(

)

Collector current I_C

( )

Collector current I_CA

Safe operation area

100

Non repetitve pulse

(

)

T_C= 25°C Per circuit

I_CP

t = 1 ms

t = 10 ms

0.1

0.01

100

1000

(

)

Collector-emitter voltage V_CE

SJK00008AED

Request for your special attention and precautions in using the technical information

and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of

the products or technical information described in this material and controlled under the "Foreign Exchange

and Foreign Trade Law" is to be exported or taken out of Japan.

(2) The technical information described in this material is limited to showing representative characteristics and

applied circuits examples of the products. It neither warrants non-infringement of intellectual property right

or any other rights owned by our company or a third party, nor grants any license.

(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical

information as described in this material.

(4) The products described in this material are intended to be used for standard applications or general elec-

tronic equipment (such as office equipment, communications equipment, measuring instruments and house-

hold appliances).

Consult our sales staff in advance for information on the following applications:

• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-

tion equipment, life support systems and safety devices) in which exceptional quality and reliability are

required, or if the failure or malfunction of the products may directly jeopardize life or harm the human

body.

• Any applications other than the standard applications intended.

(5) The products and product specifications described in this material are subject to change without notice for

modification and/or improvement. At the final stage of your design, purchasing, or use of the products,

therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-

tions satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-

ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not

be liable for any defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of

break down and failure mode, possible to occur to semiconductor products. Measures on the systems such

as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent

physical injury, fire, social damages, for example, by using the products.

(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life

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permission of Matsushita Electric Industrial Co., Ltd.

2003 SEP

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