PUB4120P [PANASONIC]

Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10;


型号：	PUB4120P
厂家：	PANASONIC
描述：	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 开关晶体管
文件：	总3页 (文件大小：86K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Power Transistor Arrays

PUB4120 (PU4120), PUB4420 (PU4420)

Silicon NPN triple diffusion planar type darlington

For power amplification

Unit: mm

Complementary to PUB4220 (PU4220), PUB4520 (PU4520)

25.3 0.2

4.0 0.2

■ Features

• High forward current transfer ratio h_FE

• High-speed switching

• PUB4120 (PU4120): NPN 4 elements

PUB4420 (PU4420): NPN 2 elements × 2

0.5 0.15

0.8 0.25

0.5 0.15

■ Absolute Maximum Ratings T_C= 25°C

1.0 ^0.25

2.54 0.2

Parameter

Symbol

Rating

Unit

9 × 2.54 = 22.86 0.25

1: Emitter

2: Base

Collector-base voltage (Emitter open) V_CBO

C 1.5 0.5

3: Collector

4: Base

5: Collector

6: Base

7: Collector

8: Base

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

V_CEO

V_EBO

I_C

1 2 3 4 5 6 7 8 9 10

Peak collector current

Collector power dissipation

T_a= 25°C

I_CP

9: Collector

10:Emitter

SIP10-A1 Package

P_C

3.5

Junction temperature

T_j

150

°C

Storage temperature

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

V_CEO

V_BE

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

Base-emitter voltage

I_C= 30 mA, I_B= 0

V_CE= 3 V, I_C= 3 A

V_CB= 60 V, I_E= 0

V_CE= 30 V, I_B= 0

V_EB= 5 V, I_C= 0

V_CE= 3 V, I_C= 0.5 A

V_CE= 3 V, I_C= 3 A

2.5

200

500

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_CBO

µA



I_CEO

I_EBO

h_FE1

1000

h_FE2

10000

2.0

Collector-emitter saturation voltage

Transition frequency

Turn-on time

V_CE(sat)I_C= 3 A, I_B= 12 mA

MHz

µs

f_T

t_on

t_stg

t_f

V_CE= 10 V, I_C= 0.5 A, f = 1 MHz

0.5

4.0

1.0

I_C= 3 A

Storage time

I_B1= 12 mA, I_B2= −12 mA

V_CC= 50 V

Fall time

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

Free

h_FE

1000 to 10000 2000 to 10 000 1000 to 5000

■ Internal Connection

• PUB4120

• PUB4420

Note) The part numbers in the parenthesis show conventional part number.

Publication date: March 2004

SJK00063AED

PUB4120, PUB4420

P_C T_a

I_C V_CE

I_C V_BE

( )

T_C= T_a

V_CE= 3 V

T_C= 25°C

With a 50 × 50 × 2 mm

Al heat sink

I_B= 4.0 mA

3.5 mA

3.0 mA

2.5 mA

( )

Without heat sink

( )

T_C= 100°C

25°C

2.0 mA

1.5 mA

−25°C

1.0 mA

0.5 mA

( )

0.8

1.6

2.4

3.2

120

160

(

)

(

)

( )

Base-emitter voltage V_BEV

Collector-emitter voltage V_CE

Ambient temperature T_a°C

V_CE(sat) I_C

h_FE I_C

C_ob V_CB

100

10⁵

10⁴

10³

10²

10⁴

10³

10²

_C/ I_B= 250

V_CE= 3 V

I_E= 0

f = 1 MHz

T_C= 25°C

T_C= 100°C

25°C

−25°C

25°C

−25°C

T_C= 100°C

0.1

0.01

0.1

100

(

)

(

)

( )

Collector-base voltage V_CBV

Collector current I_C

Safe operation area

100

Non repetitve pulse

(

)

T_C= 25°C Per circuit

I_CP

t = 10 ms

t = 1 ms

0.1

0.01

100

1000

(

)

Collector-emitter voltage V_CE

SJK00063AED

Request for your special attention and precautions in using the technical information

and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of

the products or technical information described in this material and controlled under the "Foreign Exchange

and Foreign Trade Law" is to be exported or taken out of Japan.

(2) The technical information described in this material is limited to showing representative characteristics and

applied circuits examples of the products. It neither warrants non-infringement of intellectual property right

or any other rights owned by our company or a third party, nor grants any license.

(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical

information as described in this material.

(4) The products described in this material are intended to be used for standard applications or general elec-

tronic equipment (such as office equipment, communications equipment, measuring instruments and house-

hold appliances).

Consult our sales staff in advance for information on the following applications:

• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-

tion equipment, life support systems and safety devices) in which exceptional quality and reliability are

required, or if the failure or malfunction of the products may directly jeopardize life or harm the human

body.

• Any applications other than the standard applications intended.

(5) The products and product specifications described in this material are subject to change without notice for

modification and/or improvement. At the final stage of your design, purchasing, or use of the products,

therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-

tions satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-

ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not

be liable for any defect which may arise later in your equipment.

Even when the products are used within the guaranteed values, take into the consideration of incidence of

break down and failure mode, possible to occur to semiconductor products. Measures on the systems such

as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent

physical injury, fire, social damages, for example, by using the products.

(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life

and amount of time let standing of unsealed items) agreed upon when specification sheets are individually

exchanged.

(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written

permission of Matsushita Electric Industrial Co., Ltd.

2003 SEP

相关型号：