R-G535S [PANASONIC]

High modulus Low CTE IC substrate materials;
R-G535S
型号: R-G535S
厂家: PANASONIC    PANASONIC
描述:

High modulus Low CTE IC substrate materials

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中文:  中文翻译
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Circuit Board Materials  
電子回路基板材料  
Panasonic Electronic Materials Division launches a new product brand for the Semiconductor Device Materials business. The IC substrate materials' brand is transitioning from MEGTRON GX to LEXCM GX.  
パナソニック 電子材料事業部はたに半導体デバイス材料の製品ブランドLE X C M( レ ク シ ム としてスタートしますれに伴い導体パッケージ基 板材料MEGTRON GXLEXCM GXへ変更いたします。  
High modulus Low CTE  
IC substrate materials  
高弾熱膨張半導体パケージ基板材料  
Laminate R-G535S(Low CTE glass cloth)  
Laminate R-G535E(Normal glass cloth)  
Applications ⽤途  
IC substrate(FC-BGA)  
半導体パケージ基板 (FC-BGA)  
Package  
半 導 体 ッケージ  
Excellent low warpage at large-sized package by low CTE property. Good for high performance computing application.  
低熱膨張より高性能ンピューィン向けなどの大型パケージ基板に対応  
CTE x, y-axis  
4-6ppm/℃  
Low Package Warpage  
(FC-BGA)  
Good MTH* Processability  
*Mechanical Through Hole  
IC Package Warpageꢀパッケージ基板反り評価結果  
Mechanical drilling processability  
ꢀドリル加工性  
Result  
Construction  
300  
200  
100  
Through-hole wall  
R-G535S  
condition  
Low CTE glass cloth  
@ 20khits  
0
30  
75  
125 175 220 260 220 175 125  
75  
30  
Package  
construction  
4-2-4(Build-up Film)  
52×52mm  
20×20×0.5mm  
1200μm  
SnAgCu  
-100  
-200  
-300  
Package size  
Chip size  
Core  
R-G535E  
Unit :μm  
Normal glass cloth  
260℃  
Ave+3σ = 22.0μm  
Temperature(℃)  
30℃  
Moire Picture  
Bump  
Bump pitch  
Bump size  
Design  
0.2mm  
R-G535E  
R-G535S  
(Low CTE glass cloth)  
85μm  
Core material  
800μm / Copper foil 12μm  
2 panels  
Panel stack  
Full-array  
8464  
Drill bit diameter  
Drill hit number  
Feeding speed  
Revolution  
150μm  
20,000hits  
Bump count  
R-G535E  
(Normal glass cloth)  
2.0m/min  
Panasonic  
CV5300AM  
Underfill  
200krpm  
General propertiesꢀ⼀般特性  
R-G535S  
R-G535E  
Item  
Test method  
DMA*  
Condition  
A
Unit  
Low CTE glass cloth  
Normal glass cloth  
Glass transition temp.(Tg)  
250-260  
4-6  
250-260  
7-8  
CTE x-axis  
α1  
IPC-TM-650 2.4.41  
A
ppm/℃  
CTE y-axis  
4-6  
7-8  
Dielectric constant(Dk)  
1GHz  
4.4  
4.6  
IPC-TM-650 2.5.5.9  
JIS C 6481  
C-24/23/50  
20℃  
Dissipation factor(Df)  
0.015  
32-34  
0.015  
28-30  
Flexural modulus  
GPa  
The sample thickness is 0.8 mm.  
* 0.4mm Measurement in tensile mode  
Our Halogen-free materials are based on JPCA-ES-01-2003 standard and others. 当社ハロゲンフリー材料は、JPCA-ES-01-2003 などの定義によるものです。  
The above data are typical values and not guaranteed values. 上記データは当社測定による代表値であり、保証値ではありません。  
Please see the page for “Notes before you use” 商品のご採用に当たっての注意事項は こちら  
2021  
202109  
industrial.panasonic.com/ww/electronic-materials  
panasonic R-G535  

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