UN421N [PANASONIC]

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, NS-B1, 3 PIN;
UN421N
型号: UN421N
厂家: PANASONIC    PANASONIC
描述:

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, NS-B1, 3 PIN

开关 晶体管
文件: 总4页 (文件大小:357K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
This product complies with the RoHS Directive (EU 2002/95/EC).  
Transistors with built-in Resistor  
UNR421N (UN421N)  
Silicon NPN epitaxial planar type  
For digital circuits  
Features  
Package  
Costs can be reduced through downsizing of the equipment and reduction of  
the number of parts.  
Allowing supply with the radial taping  
Code  
NS-B1  
Pin Name  
1: Emitter  
2: ollector  
Resistance by Part Number  
(R1)  
(R2)  
UNR421N (UN421N)  
4.7 k  
47 kΩ  
Absolute Maximum Ratings Ta = 25°C  
Internal Connection  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
Rag  
Unit  
V
R1  
B
VCB
VO  
IC  
50  
C
E
V
R2  
100  
mA  
mW  
°C  
Total power dissipation  
PT  
300  
Junction temperature  
Tj  
150  
Storage temperature  
T
stg  
55 to +150  
°C  
Electrical Charateristics Ta = 25°C±
Parr  
Sym
Conditions  
Min  
50  
Typ  
Max  
Unit  
V
Collector-bse voltage (Emitter open)  
Colector-emiter voltage (Base pen)  
Collectr-base cutont (Emitter open)  
Collector-emitte(Base open)  
Emitter-base cutoff lector open)  
Forward current transfer io  
Collector-emitter saturation voltage  
Output voltage high-level  
VCBO IC = 10 mA, IE = 0  
VCEO IC = 2 mA, IB = 0  
50  
V
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
0.1  
0.5  
mA  
mA  
mA  
0.2  
VCE = 10 V, IC = 5 mA  
80  
4.9  
400  
0.25  
VCE(sat) IC = 10 mA, IB = 0.3 mA  
V
VOH  
VOL  
R1  
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ  
V
Output voltage low-level  
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ  
0.2  
V
Input resistance  
–30%  
4.7  
0.1  
+30%  
kΩ  
Resistance ratio  
R1 / R2  
fT  
Transition frequency  
VCB = 10 V, IE = –2 mA, f = 200 MHz  
150  
MHz  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: February 2009  
SJHD0020AED  
1
This product complies with the RoHS Directive (EU 2002/95/EC).  
UNR421N  
Common characteristics chart  
PT T  
a
400  
300  
200  
100  
0
0
40  
80  
120  
160  
(
)
Ambient temperature Ta °C  
Characteristics charts of UNR421N  
IC VCE  
VE(sat) IC  
hFE IC  
10  
1
160  
480  
400  
320  
240  
160  
80  
IC / IB = 10  
V
CE = 10 V  
Ta =
140  
120  
100  
80  
I
B = 1.0 mA  
0.9 mA  
.8 mA  
0.7 A  
0.6 mA  
Ta = 75°C  
–25°C  
0.5 mA  
0.4 mA  
25°C  
0.3 mA  
Ta = 75°C  
25°C  
2 mA  
0.1  
40  
0.1 A  
20  
–25°C  
0.01  
0
0
8
10  
12  
1
10  
100  
1000  
1
10  
100  
1000  
Collector current IC (mA)  
Collector current IC (mA)  
Collectage VCE (V)  
Cob VCB  
IO VIN  
VIN IO  
6
5
4
3
2
1
0
100  
10  
10000  
1000  
f = 1 MHz  
V
O = 0.2 V  
V
O = 5 V  
I
E = 0  
Ta = 25°C  
T
a = 25°C  
Ta = 25°C  
1
0.1  
100  
10  
1
0.01  
1
10  
100  
0.1  
1
10  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
コレクタ・ベース間電圧 VCB (V)  
Output current IO (mA)  
Input voltage VIN (V)  
2
SJHD0020AED  
This product complies with the RoHS Directive (EU 2002/95/EC).  
UNR421N  
NS-B1  
Unit: mm  
4.0 ±0.2  
2.0 ±0.2  
0.75 max.  
+0.2
0.10  
0.45  
+0.20  
0.10  
(2.5)  
(2.5)  
0.45  
0.7 ±0.1  
3
1
2
SJHD0020AED  
3
Request for your special attention and precautions in using the technical information and  
semiconductors described in this book  
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and  
regulations of the exporting country, especially, those with regard to security export control, must be observed.  
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples  
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any  
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any  
other company which may arise as a result of the use of technical information described in this book.  
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office  
equipment, communications equipment, measuring instruments and household appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support  
systems and safety devices) in which exceptional quality and reliability requied, or if the failure or malfunction of the prod-  
ucts may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this book are subjet to change wit notice for modification and/or im-  
provement. At the final stage of your design, purchasingr use of the roducts, therfor the most up-to-date Product  
Standards in advance to make sure that the latest specifictions stisfy your requirements.  
(5) When designing your equipment, comply with he ange f absolute maximing nd the guaranteed operating conditions  
(operating power supply voltage and operating nvirent etc.). Especiall, plee be ceful not to exceed the range of absolute  
maximum rating on the transient state, such as powpower-off and modeswitching. Otherwise, we will not be liable for any  
defect which may arise later in your equpmen
Even when the products are used withthe guaanteed values, kinto he cosideration of incidence of break down and failure  
mode, possible to occur to semiconductor products. Measures on the sytems such as redundant design, arresting the spread of fire  
or preventing glitch are recommin ordto prevent physicinjury, fre, social damaes, for example, by using the products.  
(6) Comply with the instructios for se in rder to prevent breakdwn and characteristics change due to external factors (ESD, EOS,  
thermal stress and mechanicastress) at the time of andlig, mounting or at customer's process. When using products for which  
damp-proof packinis reqired, stisfy the condtions, sch as shelf life and the elapsed time since first opening the packages.  
(7) This book may e not eprinted or reprodhethr wholly or partially, without the prior written permission of our company.  
2008080

相关型号:

UN4221

Silicon NPN epitaxial planer transistor
PANASONIC

UN4222

Silicon NPN epitaxial planer transistor
PANASONIC

UN4223

Silicon NPN epitaxial planer transistor
PANASONIC

UN4224

Silicon NPN epitaxial planer transistor
PANASONIC

UN50A61-BT01-7H

Telecom and Datacom Connector
FOXCONN

UN5101TX

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
PANASONIC

UN5110

Silicon PNP epitaxial planar type
PANASONIC

UN5110H

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
PANASONIC

UN5110Q

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN
PANASONIC

UN5110R

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN
PANASONIC

UN5110S

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-70
ETC

UN5110TX

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
PANASONIC