UNR2210 [PANASONIC]

Silicon NPN epitaxial planar transistor; NPN硅外延平面晶体管
UNR2210
型号: UNR2210
厂家: PANASONIC    PANASONIC
描述:

Silicon NPN epitaxial planar transistor
NPN硅外延平面晶体管

晶体 晶体管
文件: 总17页 (文件大小:433K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Transistors with built-in Resistor  
UNR221x Series (UN221x Series)  
Silicon NPN epitaxial planar transistor  
Unit: mm  
+0.10  
–0.05  
0.40  
+0.10  
For digital circuits  
0.16  
–0.06  
3
Features  
Costs can be reduced through downsizing of the equipment and  
reduction of the number of parts.  
1
2
Mini type package allowing easy automatic insertion through tape  
(0.95) (0.95)  
packing and magazine packing  
1.9 0.1  
+0.20  
2.90  
–0.05  
Resistance by Part Number  
10˚  
Marking Symbol (R1)  
(R2)  
UNR2210 (UN2210)  
UNR2211 (UN2211)  
UNR2212 (UN2212)  
UNR2213 (UN2213)  
UNR2214 (UN2214)  
UNR2215 (UN2215)  
UNR2216 (UN2216)  
UNR2217 (UN2217)  
UNR2218 (UN2218)  
UNR2219 (UN2219)  
UNR221D (UN221D)  
UNR221E (UN221E)  
UNR221F (UN221F)  
UNR221K (UN221K)  
UNR221L (UN221L)  
8L  
8A  
8B  
8C  
8D  
8E  
8F  
8H  
8I  
8K  
8M  
8N  
8O  
8P  
8Q  
47 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
10 kΩ  
10 kΩ  
4.7 kΩ  
22 kΩ  
0.51 kΩ  
1 kΩ  
47 kΩ  
47 kΩ  
4.7 kΩ  
10 kΩ  
4.7 kΩ  
2.2 kΩ  
4.7 kΩ  
22 kΩ  
2.2 kΩ  
4.7 kΩ  
10 kΩ  
22 kΩ  
47 kΩ  
47 kΩ  
1: Base  
2: Emitter  
3: Collector  
EIAJ: SC-59  
Mini3-G1 Package  
Internal Connection  
5.1 kΩ  
10 kΩ  
10 kΩ  
22 kΩ  
10 kΩ  
4.7 kΩ  
4.7 kΩ  
47 kΩ  
47 kΩ  
47 kΩ  
2.2 kΩ  
22 kΩ  
R1  
B
C
E
R2  
UNR221M (UN221M) EL  
UNR221N (UN221N)  
UNR221T (UN221T)  
UNR221V (UN221V)  
UNR221Z (UN221Z)  
EX  
EZ  
FD  
FF  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
50  
50  
V
Collector current  
IC  
PT  
100  
mA  
mW  
°C  
200  
Total power dissipation  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55 to +150  
°C  
Note) The part numbers in the parenthesis show conventional part number.  
Publication date: December 2003  
SJH00010CED  
1
UNR221x Series  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCBO  
VCEO  
ICBO  
Conditions  
IC = 10 µA, IE = 0  
Min  
50  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
IC = 2 mA, IB = 0  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = −6 V, IC = 0  
50  
V
0.1  
0.5  
µA  
µA  
mA  
ICEO  
Emitter-base UNR2210/2215/2216/2217 IEBO  
cutoff current UNR2213  
0.01  
0.1  
(Collector open)  
UNR2212/2214/221D/  
221E/221M/221N/221T  
0.2  
UNR221Z  
0.4  
0.5  
1.0  
1.5  
2.0  
20  
UNR2211  
UNR221F/221K  
UNR2219  
UNR2218/221L/221V  
Forward current UNR221V  
transfer ratio UNR2218/221K/221L  
UNR2219/221D/221F  
UNR2211  
hFE  
VCE = 10 V, IC = 5 mA  
6
20  
30  
35  
60  
60  
80  
80  
160  
UNR2212/221E  
UNR221Z  
200  
UNR2213/2214/221M  
UNR221N/221T  
400  
460  
0.25  
UNR2210*/2215*/2216*/2217*  
Collector-emitter saturation voltage  
UNR221V  
VCE(sat) IC = 10 mA, IB = 0.3 mA  
IC = 10 mA, IB = 1.5 mA  
V
Output voltage high-level  
Output voltage low-level  
UNR2213/221K  
VOH  
VOL  
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ  
4.9  
V
V
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ  
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ  
VCC = 5 V, VB = 10 V, RL = 1 kΩ  
VCC = 5 V, VB = 6 V, RL = 1 kΩ  
VCB = 10 V, IE = −2 mA, f = 200 MHz  
0.2  
UNR221D  
UNR221E  
Transition frequency  
Input resistance UNR2218  
UNR2219  
fT  
150  
MHz  
R1  
30% 0.51 +30%  
kΩ  
1.0  
2.2  
4.7  
UNR221M/211V  
UNR2216/221F/221L/  
221N/221Z  
UNR2211/2214/2215/221K  
UNR2212/2217/221T  
UNR2210/2213/221D/221E  
10  
22  
47  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
Q
R
S
No-rank  
hFE  
160 to 260  
210 to 340  
290 to 460  
160 to 460  
SJH00010CED  
2
UNR221x Series  
Electrical Characteristics (continued) Ta = 25°C 3°C  
Parameter  
Resistance ratio UNR221M  
UNR221N  
Symbol  
Conditions  
Min  
Typ  
0.047  
0.1  
Max  
Unit  
R1/R2  
UNR2218/2219  
0.08  
0.17  
0.37  
0.10  
0.21  
0.21  
0.47  
0.47  
1.0  
0.12  
0.25  
0.57  
UNR221Z  
UNR2214  
UNR221T  
UNR221F  
UNR221V  
UNR2211/2212/2213/221L  
UNR221K  
0.8  
1.70  
1.70  
3.7  
1.0  
1.2  
2.60  
2.60  
5.7  
2.13  
2.14  
4.7  
UNR221E  
UNR221D  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Common characteristics chart  
PT Ta  
250  
200  
150  
100  
50  
0
0
40  
80  
120  
160  
(
)
Ambient temperature Ta °C  
Characteristics charts of UNR2210  
IC VCE  
VCE(sat) IC  
hFE IC  
400  
300  
200  
100  
0
60  
100  
10  
IB = 1.0 mA  
Ta = 25°C  
IC / IB = 10  
VCE = 10 V  
0.9 mA  
0.8 mA  
50  
40  
Ta = 75°C  
0.4 mA  
0.5 mA  
25°C  
30  
20  
10  
0
0.3 mA  
1
0.6 mA  
0.7 mA  
Ta = 75°C  
25°C  
0.1 mA  
25°C  
0.1  
0.01  
25°C  
1
10  
100  
1000  
0
2
4
6
8
10  
12  
0.1  
1
10  
100  
(
)
Collector current IC mA  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
SJH00010CED  
3
UNR221x Series  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
6
100  
10  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
VO = 5 V  
Ta = 25°C  
Ta = 25°C  
5
4
3
2
1
0
1
0.1  
0.01  
1
0.4  
0.1  
1
10  
100  
0.1  
1
10  
100  
0.6  
0.8  
1.0  
1.2  
1.4  
Collector-base voltage VCB (V)  
Output current IO (mA)  
Input voltage VIN (V)  
Characteristics charts of UNR2211  
IC VCE  
VCE(sat) IC  
hFE IC  
160  
100  
10  
400  
300  
200  
100  
0
IC / IB = 10  
Ta = 25°C  
VCE = 10 V  
IB = 1.0 mA  
0.9 mA  
0.8 mA  
0.7 mA  
120  
0.6 mA  
Ta = 75°C  
0.5 mA  
0.4 mA  
0.3 mA  
80  
1
25°C  
25°C  
0.2 mA  
Ta = 75°C  
25°C  
40  
0.1  
0.01  
25˚C  
0.1 mA  
10 12  
0
0
2
4
6
8
0.1  
1
10  
100  
1
10  
100  
1000  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
Collector current IC (mA)  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1
100  
10  
6
5
4
3
2
1
0
VO = 0.2 V  
Ta = 25°C  
VO = 5 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
1
0.1  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
Output current IO (mA)  
Collector-base voltage VCB (V)  
Input voltage VIN (V)  
SJH00010CED  
4
UNR221x Series  
Characteristics charts of UNR2212  
IC VCE  
VCE(sat) IC  
hFE IC  
100  
10  
160  
400  
300  
200  
100  
0
IC / IB = 10  
Ta = 25°C  
VCE = 10 V  
IB = 1.0 mA  
0.9 mA  
0.7 mA  
0.8 mA  
120  
80  
40  
0
0.6 mA  
0.5 mA  
Ta = 75°C  
0.4 mA  
1
0.3 mA  
0.2 mA  
25°C  
25°C  
Ta = 75°C  
25°C  
0.1  
0.01  
25°C  
0.1 mA  
0.1  
1
10  
100  
0
2
4
6
8
10  
12  
1
10  
100  
1000  
Collector current IC (mA)  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1
100  
10  
6
VO = 5 V  
Ta = 25°C  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
5
4
3
2
1
0
1
0.1  
0.01  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.1  
1
10  
100  
0.1  
1
10  
100  
Input voltage VIN (V)  
Output current IO (mA)  
Collector-base voltage VCB (V)  
Characteristics charts of UNR2213  
IC VCE  
VCE(sat) IC  
hFE IC  
160  
100  
10  
400  
IC / IB = 10  
Ta = 25°C  
VCE = 10 V  
IB = 1.0 mA  
0.9 mA  
0.8 mA  
0.7 mA  
120  
Ta = 75°C  
25°C  
300  
200  
100  
0
0.6 mA  
0.5 mA  
0.4 mA  
25°C  
80  
1
0.3 mA  
Ta = 75°C  
25°C  
0.2 mA  
40  
0.1  
0.01  
25°C  
0.1 mA  
0
0
2
4
6
8
10  
12  
0.1  
1
10  
100  
1
10  
100  
1000  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
Collector current IC (mA)  
SJH00010CED  
5
UNR221x Series  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1
6
100  
10  
VO = 0.2 V  
Ta = 25°C  
VO = 5 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
5
4
3
2
1
0
1
0.1  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
Collector-base voltage VCB (V)  
Output current IO (mA)  
Input voltage VIN (V)  
Characteristics charts of UNR2214  
IC VCE  
VCE(sat) IC  
hFE IC  
100  
10  
160  
400  
300  
200  
100  
0
IC / IB = 10  
Ta = 25°C  
VCE = 10 V  
IB = 1.0 mA  
0.9 mA  
0.8 mA  
0.7 mA  
120  
80  
40  
0
0.6 mA  
Ta = 75°C  
0.5 mA  
0.4 mA  
0.3 mA  
1
25°C  
Ta = 75°C  
25°C  
25°C  
0.1  
0.01  
0.2 mA  
0.1 mA  
25°C  
0.1  
1
10  
100  
0
2
4
6
8
10  
12  
1
10  
100  
1000  
Collector current IC (mA)  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1
100  
10  
6
5
4
3
2
1
0
VO = 0.2 V  
Ta = 25°C  
VO = 5 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
1
0.1  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
Collector-base voltage VCB (V)  
Output current IO (mA)  
Input voltage VIN (V)  
SJH00010CED  
6
UNR221x Series  
Characteristics charts of UNR2215  
IC VCE  
VCE(sat) IC  
hFE IC  
160  
100  
10  
400  
300  
200  
100  
0
IC / IB = 10  
Ta = 25°C  
VCE = 10 V  
IB = 1.0 mA  
0.9 mA  
0.8 mA  
120  
80  
40  
0
0.7 mA  
0.6 mA  
Ta = 75°C  
0.5 mA  
0.4 mA  
1
25°C  
0.3 mA  
25°C  
Ta = 75°C  
0.2 mA  
0.1 mA  
25°C  
0.1  
0.01  
25°C  
0
2
4
6
8
10  
12  
0.1  
1
10  
100  
1
10  
100  
1000  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
Collector current IC (mA)  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
6
100  
10  
VO = 5 V  
Ta = 25°C  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
5
4
3
2
1
0
1
0.1  
0.01  
1
0.4  
0.1  
1
10  
100  
0.6  
0.8  
1.0  
1.2  
1.4  
0.1  
1
10  
100  
Collector-base voltage VCB (V)  
Input voltage VIN (V)  
Output current IO (mA)  
Characteristics charts of UNR2216  
IC VCE  
VCE(sat) IC  
hFE IC  
100  
10  
400  
160  
IC / IB = 10  
VCE = 10 V  
Ta = 25°C  
Ta = 75°C  
25°C  
IB = 1.0 mA  
0.9 mA  
300  
200  
100  
0
120  
0.8 mA  
0.7 mA  
0.6 mA  
0.5 mA  
25°C  
0.4 mA  
1
80  
0.3 mA  
Ta = 75°C  
0.2 mA  
25°C  
0.1  
40  
0.1 mA  
25°C  
0.01  
0.1  
0
1
10  
100  
1
10  
100  
1000  
0
2
4
6
8
10  
12  
Collector current IC (mA)  
Collector current IC (mA)  
Collector-emitter voltage VCE (V)  
SJH00010CED  
7
UNR221x Series  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1
100  
10  
6
VO = 5 V  
Ta = 25°C  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
5
4
3
2
1
0
1
0.1  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
Collector-base voltage VCB (V)  
Output current IO (mA)  
Input voltage VIN (V)  
Characteristics charts of UNR2217  
IC VCE  
VCE(sat) IC  
hFE IC  
120  
100  
10  
400  
300  
200  
100  
0
IC / IB = 10  
Ta = 25°C  
VCE = 10 V  
IB =1 .0 mA  
0.9 mA  
0.8 mA  
100  
0.7 mA  
0.6 mA  
0.5 mA  
80  
0.4 mA  
0.3 mA  
0.2 mA  
60  
1
Ta = 75°C  
Ta = 75°C  
25°C  
40  
25°C  
25°C  
0.1  
0.01  
20  
0.1 mA  
10  
25°C  
0
0
2
4
6
8
12  
0.1  
1
10  
100  
1
10  
100  
1000  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
Collector current IC (mA)  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1
6
5
4
3
2
1
0
100  
10  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
VO = 5 V  
Ta = 25°C  
Ta = 25°C  
1
0.1  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
Collector-base voltage VCB (V)  
Output current I (mA)  
Input voltage VIN (V)  
O
SJH00010CED  
8
UNR221x Series  
Characteristics charts of UNR2218  
IC VCE  
VCE(sat) IC  
hFE IC  
160  
120  
80  
40  
0
240  
100  
10  
IC / IB = 10  
Ta = 25°C  
VCE = 10 V  
200  
IB = 1.0 mA  
0.9 mA  
160  
120  
80  
40  
0
0.8 mA  
0.7 mA  
Ta = 75°C  
1
Ta = 75°C  
0.6 mA  
0.5 mA  
0.4 mA  
25°C  
25°C  
25°C  
0.1  
0.01  
0.3 mA  
0.2 mA  
0.1 mA  
25°C  
1
10  
100  
1000  
0
2
4
6
8
10  
12  
0.1  
1
10  
100  
Collector current IC (mA)  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1
6
5
4
3
2
1
0
100  
10  
VO = 5 V  
Ta = 25°C  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
1
0.1  
0.01  
0.1  
1
10  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.1  
1
10  
100  
Collector-base voltage VCB (V)  
Input voltage VIN (V)  
Output current IO (mA)  
Characteristics charts of UNR2219  
IC VCE  
VCE(sat) IC  
hFE IC  
100  
10  
240  
160  
IC / IB = 10  
Ta = 25°C  
VCE = 10 V  
200  
IB = 1.0 mA  
120  
80  
40  
0
0.9 mA  
0.8 mA  
160  
0.7 mA  
0.6 mA  
Ta = 75°C  
1
120  
25°C  
Ta = 75°C  
25°C  
0.5 mA  
0.4 mA  
80  
25°C  
0.3 mA  
0.1  
0.01  
40  
0
0.2 mA  
0.1 mA  
25°C  
0.1  
1
10  
100  
1
10  
100  
1000  
0
2
4
6
8
10  
12  
Collector current IC (mA)  
Collector current IC (mA)  
Collector-emitter voltage VCE (V)  
SJH00010CED  
9
UNR221x Series  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1
6
100  
10  
VO = 5 V  
Ta = 25°C  
V
= 0.2 V  
f = 1 MHz  
IE = 0  
TaO= 25°C  
Ta = 25°C  
5
4
3
2
1
0
1
0.1  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
Collector-base voltage VCB (V)  
Output current IO (mA)  
Input voltage VIN (V)  
Characteristics charts of UNR221D  
IC VCE  
VCE(sat) IC  
hFE IC  
30  
100  
10  
160  
120  
80  
40  
0
IC / IB = 10  
Ta = 25°C  
0.9 mA  
VCE = 10 V  
Ta = 75°C  
0.8 mA  
0.7 mA  
0.6 mA  
0.5 mA  
0.4 mA  
0.3 mA  
25°C  
25  
20  
15  
10  
5
25°C  
IB = 1.0 mA  
1
0.2 mA  
0.1 mA  
Ta = 75°C  
25°C  
0.1  
0.01  
25°C  
0
0.1  
1
10  
100  
0
2
4
6
8
10  
12  
1
10  
100  
1000  
Collector current IC (mA)  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
Cob VCB  
IO VIN  
VIN IO  
6
5
4
3
2
1
0
104  
103  
102  
10  
1
100  
10  
VO = 5 V  
Ta = 25°C  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
1
0.1  
0.01  
0.1  
1
10  
100  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0.1  
1
10  
100  
Collector-base voltage VCB (V)  
Input voltage VIN (V)  
Output current IO (mA)  
SJH00010CED  
10  
UNR221x Series  
Characteristics charts of UNR221E  
IC VCE  
VCE(sat) IC  
hFE IC  
100  
10  
160  
120  
80  
40  
0
60  
IB = 1.0 mA  
IC / IB = 10  
0.7 mA  
Ta = 25°C  
0.9 mA  
0.8 mA  
VCE = 10 V  
0.6 mA  
50  
40  
30  
20  
10  
0
Ta = 75°C  
25°C  
25°C  
0.2 mA  
0.1 mA  
0.3 mA  
0.4 mA  
0.5 mA  
1
Ta = 75°C  
25°C  
0.1  
0.01  
25°C  
0.1  
1
10  
100  
1
10  
100  
1000  
0
2
4
6
8
10  
12  
Collector current IC (mA)  
Collector current IC (mA)  
Collector-emitter voltage VCE (V)  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1
100  
10  
6
5
4
3
2
1
0
VO = 0.2 V  
Ta = 25°C  
VO = 5 V  
f = 1MHz  
IE = 0  
Ta = 25°C  
Ta = 25°C  
1
0.1  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
Collector-base voltage VCB (V)  
Output current IO (mA)  
Input voltage VIN (V)  
Characteristics charts of UNR221F  
IC VCE  
VCE(sat) IC  
hFE IC  
100  
10  
240  
160  
IC / IB = 10  
Ta = 25°C  
VCE = 10 V  
200  
120  
80  
40  
0
0.9 mA  
0.8 mA  
160  
120  
80  
40  
0
0.7 mA  
0.6 mA  
Ta = 75°C  
Ta = 75°C  
1
IB = 1.0 mA  
25°C  
25°C  
0.5 mA  
0.4 mA  
0.3 mA  
25°C  
0.1  
0.01  
0.2 mA  
0.1 mA  
25°C  
0.1  
1
10  
100  
0
2
4
6
8
10  
12  
1
10  
100  
1000  
Collector current IC (mA)  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
SJH00010CED  
11  
UNR221x Series  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1
6
100  
10  
VO = 5 V  
Ta = 25°C  
VO = 0.2 V  
= 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
T
a
5
4
3
2
1
0
1
0.1  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
Collector-base voltage VCB (V)  
Output current IO (mA)  
Input voltage VIN (V)  
Characteristics charts of UNR221K  
IC VCE  
VCE(sat) IC  
hFE IC  
100  
10  
240  
240  
200  
160  
120  
80  
IC / IB = 10  
VCE = 10 V  
Ta = 25°C  
200  
160  
Ta = 75°C  
25°C  
IB = 1.2 mA  
1
120  
1.0 mA  
0.8 mA  
Ta = 75°C  
25°C  
80  
25°C  
0.6 mA  
25°C  
0.1  
0.01  
0.4 mA  
0.2 mA  
10 12  
40  
40  
0
0
1
10  
100  
1000  
0
2
4
6
8
1
10  
100  
1000  
Collector current IC (mA)  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
Cob VCB  
VIN IO  
6
5
4
3
2
1
0
100  
10  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
1
0.1  
0.01  
1
10  
100  
0.1  
1
10  
100  
Collector-base voltage VCB (V)  
Output current IO (mA)  
SJH00010CED  
12  
UNR221x Series  
Characteristics charts of UNR221L  
IC VCE  
VCE(sat) IC  
hFE IC  
240  
200  
160  
120  
80  
240  
100  
10  
IC / IB = 10  
VCE = 10 V  
Ta = 25°C  
200  
Ta = 75°C  
160  
IB = 1.0 mA  
25°C  
0.8 mA  
120  
1
0.6 mA  
25°C  
Ta = 75°C  
25°C  
80  
40  
0
0.4 mA  
0.2 mA  
0.1  
0.01  
40  
25°C  
0
1
10  
100  
1000  
0
2
4
6
8
10  
12  
1
10  
100  
1000  
Collector current IC (mA)  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
Cob VCB  
VIN IO  
100  
10  
6
5
4
3
2
1
0
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
1
0.1  
0.01  
0.1  
1
10  
100  
1
10  
100  
Output current IO (mA)  
Collector-base voltage VCB (V)  
Characteristics charts of UNR221M  
IC VCE  
VCE(sat) IC  
hFE IC  
500  
400  
300  
200  
100  
0
10  
240  
IC / IB = 10  
Ta = 25°C  
VCE = 10 V  
IB = 1.0 mA  
200  
160  
120  
80  
0.9 mA  
0.8 mA  
1
0.1  
0.7 mA  
0.6 mA  
Ta = 75°C  
Ta = 75°C  
25°C  
25°C  
0.5 mA  
0.4 mA  
0.3 mA  
25°C  
25˚C  
0.2 mA  
0.01  
0.001  
40  
0.1 mA  
0
1
10  
100  
1000  
0
2
4
6
8
10  
12  
1
10  
100  
1000  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
Collector current IC (mA)  
SJH00010CED  
13  
UNR221x Series  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
1
100  
10  
5
VO = 5 V  
Ta = 25°C  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
4
3
2
1
0
1
0.1  
0.01  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0.1  
1
10  
100  
0.1  
1
10  
100  
Input voltage VIN (V)  
Output current IO (mA)  
Collector-base voltage VCB (V)  
Characteristics charts of UNR221N  
IC VCE  
VCE(sat) IC  
hFE IC  
10  
160  
480  
400  
320  
240  
160  
80  
IC / IB = 10  
VCE = 10 V  
Ta = 25°C  
IB = 1.0 mA  
0.9 mA  
120  
80  
40  
0
0.8 mA  
0.7 mA  
0.6 mA  
0.5 mA  
Ta = 75°C  
1
0.4 mA  
25°C  
0.3 mA  
Ta = 75°C  
25°C  
25°C  
0.1  
0.2 mA  
0.1 mA  
25°C  
0.01  
0
1
10  
100  
1000  
0
2
4
6
8
10  
12  
1
10  
100  
1000  
Collector current IC (mA)  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
6
5
4
3
2
1
0
100  
10  
f = 1 MHz  
IE = 0  
Ta = 25°C  
VO = 5 V  
VO = 0.2 V  
Ta = 25°C  
Ta = 25°C  
1
0.1  
0.01  
0.1  
1
1
10  
100  
1
10  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
Output current IO (mA)  
Collector-base voltage VCB (V)  
Input voltage VIN (V)  
SJH00010CED  
14  
UNR221x Series  
Characteristics charts of UNR221T  
IC VCE  
VCE(sat) IC  
hFE IC  
160  
10  
480  
400  
320  
240  
160  
80  
IC / IB = 10  
VCE = 10 V  
Ta = 25°C  
IB = 1.0 mA  
0.9 mA  
120  
80  
40  
0
0.8 mA  
0.7 mA  
0.6 mA  
0.5 mA  
Ta = 75°C  
1
0.4 mA  
25°C  
0.3 mA  
25°C  
Ta = 75°C  
0.2 mA  
0.1 mA  
0.1  
0.01  
25°C  
25°C  
0
0
2
4
6
8
10  
12  
1
10  
100  
1000  
1
10  
100  
1000  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
Collector current IC (mA)  
IO VIN  
IO VIN  
VIN IO  
104  
103  
102  
10  
100  
10  
6
5
4
3
2
1
0
VO = 0.2 V  
Ta = 25°C  
VO = 5 V  
f = 1 MHz  
IE = 0  
Ta = 25°C  
Ta = 25°C  
1
0.1  
0.01  
1
0.4  
0.1  
1
10  
100  
1
10  
100  
0.6  
0.8  
1.0  
1.2  
1.4  
Output current IO (mA)  
Collector-base voltage VCB (V)  
Input voltage VIN (V)  
Characteristics charts of UNR221V  
IC VCE  
VCE(sat) IC  
hFE IC  
160  
240  
10  
IC / IB = 10  
VCE = 10 V  
Ta = 25°C  
200  
160  
120  
80  
120  
80  
40  
0
IB = 1.0 mA  
0.9 mA  
0.8 mA  
1
0.7 mA  
Ta = 75°C  
25°C  
0.6 mA  
Ta = 75°C  
25°C  
0.5 mA  
0.4 mA  
0.1  
25°C  
25°C  
40  
0.3 mA  
0.2 mA  
0
0.01  
0
2
4
6
8
10  
12  
1
10  
100  
1000  
1
10  
100  
1000  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
Collector current IC (mA)  
SJH00010CED  
15  
UNR221x Series  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
100  
10  
6
VO = 0.2 V  
Ta = 25°C  
VO = 5 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
5
4
3
2
1
0
1
0.1  
0.01  
1
0.4  
0.1  
1
10  
100  
1
10  
100  
0.6  
0.8  
1.0  
1.2  
1.4  
Output current IO (mA)  
Collector-base voltage VCB (V)  
Input voltage VIN (V)  
Characteristics charts of UNR221Z  
IC VCE  
VCE(sat) IC  
hFE IC  
160  
480  
400  
320  
240  
160  
80  
10  
IC / IB = 10  
VCE = 10 V  
Ta = 25°C  
IB = 1.0 mA  
0.9 mA  
0.8 mA  
0.7 mA  
0.6 mA  
0.5 mA  
120  
80  
40  
0
Ta = 75°C  
1
0.4 mA  
0.3 mA  
25°C  
Ta = 75°C  
25°C  
25°C  
0.2 mA  
0.1 mA  
0.1  
0.01  
25°C  
0
0
2
4
6
8
10  
12  
1
10  
100  
1000  
1
10  
100  
1000  
Collector-emitter voltage VCE (V)  
Collector current IC (mA)  
Collector current IC (mA)  
Cob VCB  
IO VIN  
VIN IO  
104  
103  
102  
10  
6
5
4
3
2
1
0
100  
10  
VO = 5 V  
VO = 0.2 V  
Ta = 25°C  
f = 1 MHz  
IE = 0  
Ta = 25°C  
Ta = 25°C  
1
0.1  
0.01  
1
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1
10  
100  
0.1  
1
10  
100  
Input voltage VIN (V)  
Output current IO (mA)  
Collector-base voltage VCB (V)  
SJH00010CED  
16  
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of  
the products or technical information described in this material and controlled under the "Foreign Exchange  
and Foreign Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative characteristics and  
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right  
or any other rights owned by our company or a third party, nor grants any license.  
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical  
information as described in this material.  
(4) The products described in this material are intended to be used for standard applications or general elec-  
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-  
hold appliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-  
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are  
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human  
body.  
Any applications other than the standard applications intended.  
(5) The products and product specifications described in this material are subject to change without notice for  
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,  
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-  
tions satisfy your requirements.  
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-  
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not  
be liable for any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, take into the consideration of incidence of  
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such  
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent  
physical injury, fire, social damages, for example, by using the products.  
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life  
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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written  
permission of Matsushita Electric Industrial Co., Ltd.  
2003 SEP  

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