UNR5113GQ [PANASONIC]
暂无描述;Transistors with built-in Resistor
UNR511x Series (UN511x Series)
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits
+0.10
+0.1
0.15
0.3
–0.0
–0.05
3
■ Features
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• S-Mini type package, allowing automatic insertion through the tape/
1
2
magazine packing
(0.65)
(0.65)
1.3 0.1
2.0 0.2
■ Resistance by Part Number
10˚
Marking symbol (R1)
(R2)
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
UNR5110 (UN5110)
UNR5111 (UN5111)
UNR5112 (UN5112)
UNR5113 (UN5113)
UNR5114 (UN5114)
UNR5115 (UN5115)
UNR5116 (UN5116)
UNR5117 (UN5117)
UNR5118 (UN5118)
UNR5119 (UN5119)
UNR511D (UN511D)
UNR511E (UN511E)
UNR511F (UN511F)
UNR511H (UN511H)
UNR511L (UN511L)
UNR511M (UN511M)
UNR511N (UN511N)
UNR511T (UN511T)
UNR511V (UN511V)
UNR511Z (UN511Z)
6L
6A
6B
6C
6D
6E
6F
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
22 kΩ
2.2 kΩ
4.7 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Internal Connection
6H
6I
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
R1
B
C
E
6K
6M
6N
6O
6P
6Q
EI
EW
EY
FC
FE
R2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
−50
−50
V
Collector current
IC
PT
−100
mA
mW
°C
150
Total power dissipation
Junction temperature
Storage temperature
Tj
150
Tstg
−55 to +150
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00022BED
1
UNR511x Series
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
ICBO
Conditions
IC = −10 µA, IE = 0
Min
−50
−50
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
IC = −2 mA, IB = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −6 V, IC = 0
V
− 0.1
− 0.5
− 0.01
− 0.1
− 0.2
µA
µA
mA
ICEO
Emitter-base UNR5110/5115/5116/5117 IEBO
cutoff current UNR5113
(Collector open) UNR5112/5114/511D/
511E/511M/511N/511T
UNR511Z
− 0.4
− 0.5
−1.0
−1.5
−2.0
20
UNR5111
UNR511F/511H
UNR5119
UNR5118/511L/511V
Forward current UNR511V
hFE
VCE = −10 V, IC = −5 mA
6
20
30
35
60
60
80
80
160
transfer ratio UNR5118/511L
UNR5119/511D/511F/511H
UNR5111
UNR5112/511E
UNR511Z
200
UNR5113/5114/511M
UNR511N/511T
UNR5110*/5115*/5116*/5117*
Collector-emitter saturation voltage
UNR511V
400
460
VCE(sat) IC = −10 mA, IB = − 0.3 mA
IC = −10 mA, IB = −1.5 mA
− 0.25
V
Output voltage high-level
Output voltage low-level
UNR5113
VOH
VOL
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
VCC = −5 V, VB = −3.5 V, RL = 1 kΩ
VCC = −5 V, VB = −10 V, RL = 1 kΩ
VCC = −5 V, VB = −6 V, RL = 1 kΩ
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 2 mA, f = 200 MHz
−4.9
V
V
− 0.2
UNR511D
UNR511E
Transition frequency
UNR5116
fT
80
MHz
150
Input
UNR5118
R1
−30% 0.51 +30%
kΩ
resistance
UNR5119
1.0
2.2
4.7
UNR511H/511M/511V
UNR5116/511F/511L
511N/511Z
UNR5111/5114/5115
UNR5112/5117/511T
UNR5110/5113/511D/511E
UNR511M
10
22
47
Resistance
ratio
R1/R2
0.047
0.1
UNR511N
UNR5118/5119
UNR511Z
0.08
0.10
0.21
0.12
SJH00022BED
2
UNR511x Series
■ Electrical Characteristics (continued) Ta = 25°C 3°C
Parameter
UNR5114
Symbol
Conditions
Min
0.17
0.17
Typ
0.21
0.22
0.47
0.47
1.0
Max
0.25
0.27
Unit
Resistance
ratio
UNR511H
UNR511T
UNR511F
0.37
0.57
UNR511V
UNR5111/5112/5113/511L
UNR511E
0.8
1.70
3.7
1.0
1.2
2.60
5.7
2.14
4.7
UNR511D
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
Q
R
S
No-rank
hFE
160 to 260
210 to 340
290 to 460
160 to 460
Common characteristics chart
PT Ta
250
200
150
100
50
0
0
40
80
120
160
(
)
Ambient temperature Ta °C
Characteristics charts of UNR5110
IC VCE
VCE(sat) IC
hFE IC
−120
−100
−10
−1
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = –10 V
IB = −1.0 mA
− 0.9 mA
−100
−80
−60
−40
−20
0
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3mA
Ta = 75°C
25°C
Ta = 75°C
− 0.2mA
− 0.1mA
−25°C
25°C
−0.1
−25°C
−0.01
−0.1
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1
−10
)
Collector current IC mA
−100
−1000
(
)
V
Collector-emitter voltage VCE
(
)
(
Collector current IC mA
SJH00022BED
3
UNR511x Series
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
f = 1 MHz
IE = 0
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
Ta = 25°C
5
4
3
2
1
0
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
−0.1
−1
−10
−100
Collector-base voltage VCB (V)
(
)
(
)
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR5111
IC VCE
VCE(sat) IC
hFE IC
160
120
80
−100
−10
−1
−160
IC / IB = 10
Ta = 75°C
25°C
VCE = −10 V
Ta = 25°C
IB = −1.0 mA
−0.9 mA
−120
−0.8 mA
−25°C
−0.7 mA
−0.6 mA
−0.5 mA
−80
−40
0
−0.4 mA
Ta = 75°C
25°C
−0.3 mA
−0.2 mA
40
−0.1
−25°C
−0.1 mA
0
−1
−
0.01
−0.1
−10
−100
−1000
−1
−10
−100
0
−2
−4
−6
−8
−10 −12
(
)
Collector current IC mA
(
)
Collector current IC mA
(
)
V
Collector-emitter voltage VCE
Cob VCB
IO VIN
VIN IO
−100
−10
−104
−103
−102
−10
−1
6
5
4
3
2
1
0
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
VO = −5 V
Ta = 25°C
Ta = 25°C
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
Output current IO mA
Collector-base voltage VCB (V)
(
)
V
Input voltage VIN
SJH00022BED
4
UNR511x Series
Characteristics charts of UNR5112
IC VCE
VCE(sat) IC
hFE IC
−100
−10
−1
−160
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = −10 V
IB = −1.0mA
−0.9mA
−0.8mA
−120
−80
−40
0
−0.7mA
−0.6mA
−0.5mA
−0.4mA
Ta = 75°C
25°C
−0.3mA
−0.2mA
Ta = 75°C
−25°C
25°C
−0.1
−25°C
−0.1mA
−
0.01
−0.1
−1
−10
−100
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
(
)
Collector current IC mA
(
)
V
(
)
Collector-emitter voltage VCE
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
6
5
4
3
2
1
0
−100
−10
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
VO = −5 V
Ta = 25°C
Ta = 25°C
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
Collector-base voltage VCB (V)
(
)
Output current IO mA
(
)
V
Input voltage VIN
Characteristics charts of UNR5113
IC VCE
VCE(sat) IC
hFE IC
−160
−100
−10
−1
400
300
200
100
0
IC / IB = 10
IB = −1.0 mA
−0.9 mA
Ta = 25°C
VCE = −10 V
Ta = 75°C
25°C
−0.8 mA
−0.7 mA
−0.6 mA
−120
−80
−40
0
−0.5 mA
−0.4 mA
−25°C
−0.3 mA
−0.2 mA
Ta = 75°C
25°C
−0.1
−25°C
− 0.1 mA
−
0.01
−0.1
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1
−10
)
Collector current IC mA
−100
−1000
(
)
Collector-emitter voltage VCE
V
(
)
(
Collector current IC mA
SJH00022BED
5
UNR511x Series
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
VO = − 0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
Output current IO mA
(
)
Collector-base voltage VCB (V)
Input voltage VIN
V
Characteristics charts of UNR5114
IC VCE
VCE(sat) IC
hFE IC
−100
−10
−1
−160
400
300
200
100
0
IC / IB = 10
VCE = −10 V
Ta = 25°C
IB = −1.0 mA
−0.9 mA
−0.8 mA
−120
−0.7 mA
−0.6 mA
Ta = 75°C
−0.5 mA
−80
−40
0
−0.4 mA
−0.3 mA
−0.2 mA
25°C
Ta = 75°C
−25°C
25°C
−0.1
−0.1 mA
−25°C
−
0.01
−0.1
−1
−10
−100
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
(
)
(
)
Collector current IC mA
(
)
Collector-emitter voltage VCE
V
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
6
5
4
3
2
1
0
−1000
−100
−10
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
−0.1
−1
−10
−100
−0.1
−1
−10
−100
(
)
V
Input voltage VIN
(
)
Collector-base voltage VCB (V)
Output current IO mA
SJH00022BED
6
UNR511x Series
Characteristics charts of UNR5115
IC VCE
VCE(sat) IC
hFE IC
−160
−100
−10
−1
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = −10 V
IB = −1.0 mA
−0.9 mA
−0.8 mA
−0.7 mA
−120
−0.6 mA
−0.5 mA
Ta = 75°C
−0.4 mA
−80
25°C
−0.3 mA
−0.2 mA
Ta = 75°C
−25°C
25°C
−40
−0.1
−0.1 mA
−25°C
0
−
0.01
−0.1
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1
−10
−100
−1000
(
)
V
Collector-emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
6
5
4
3
2
1
0
−100
−10
V
= − 0.2 V
TaO= 25°C
VO = −5 V
Ta = 25˚C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
(
)
Collector-base voltage VCB (V)
Output current IO mA
Input voltage VIN
V
Characteristics charts of UNR5116
IC VCE
VCE(sat) IC
hFE IC
400
300
200
100
0
−160
−100
−10
−1
IC / IB = 10
VCE = −10 V
Ta = 25°C
IB = −1.0 mA
−0.9 mA
−0.8 mA
−120
−0.7 mA
Ta = 75°C
−0.6 mA
−0.5 mA
−80
−0.4 mA
25°C
−0.3 mA
Ta = 75°C
−25°C
25°C
−0.2 mA
−40
−0.1
−0.1 mA
−25°C
−1
0
−
0.01
−0.1
−1
−10
−100
−1000
0
−2
−4
−6
−8
−10 −12
−10
−100
(
)
(
)
V
(
)
Collector current IC mA
Collector-emitter voltage VCE
Collector current IC mA
SJH00022BED
7
UNR511x Series
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
VO = −0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
Output current IO mA
Collector-base voltage VCB (V)
(
)
V
Input voltage VIN
Characteristics charts of UNR5117
IC VCE
VCE(sat) IC
hFE IC
−100
−10
−1
−120
400
300
200
100
0
IC / IB = 10
Ta = 25°C
VCE = −10 V
IB = −1.0 mA
−100
−80
−60
−40
−20
0
−0.9 mA
−0.8 mA
−0.7 mA
−0.6 mA
−0.5 mA
−0.4 mA
Ta = 75°C
T
= 75°C
a
−0.3 mA
−0.2 mA
25°C
25°C
−0.1
−25°C
−25°C
−0.1 mA
−
0.01
−0.1
−1
−10
−100
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
(
)
(
)
V
Collector current IC mA
(
)
Collector-emitter voltage VCE
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
6
5
4
3
2
1
0
−100
−10
VO = −5 V
Ta = 25°C
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.01
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
−0.1
−1
−10
−100
−0.1
−1
−10
−100
(
)
V
Input voltage VIN
(
)
Collector-base voltage VCB (V)
Output current IO mA
SJH00022BED
8
UNR511x Series
Characteristics charts of UNR5118
IC VCE
VCE(sat) IC
hFE IC
−240
−100
−10
−1
160
120
80
40
0
IC / IB = 10
Ta = 25°C
VCE = −10 V
−200
IB = −1.0 mA
−0.9 mA
−160
−0.8 mA
−0.7 mA
Ta = 75°C
25°C
−120
Ta = 75°C
−0.6 mA
−25°C
−0.5 mA
−0.4 mA
−0.3 mA
−0.2 mA
−80
−40
0
25°C
−0.1
−25°C
−0.1 mA
−
0.01
−0.1
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1
−10
−100
−1000
(
)
(
)
Collector-emitter voltage VCE
V
Collector current IC mA
(
)
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
5
4
3
2
1
0
VO = −5 V
Ta = 25°C
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.01
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
−0.1
−1
−10
−100
−0.1
−1
−10
−100
(
)
(
)
Input voltage VIN
V
Output current IO mA
Collector-base voltage VCB (V)
Characteristics charts of UNR5119
IC VCE
VCE(sat) IC
hFE IC
−240
160
120
80
−100
−10
−1
IC / IB = 10
Ta = 25°C
VCE = −10 V
−200
IB = −1.0 mA
−0.9 mA
−0.8 mA
−160
Ta = 75°C
−0.7 mA
−120
Ta = 75°C
25°C
−25°C
−80
−40
0
−0.6 mA
−0.5 mA
25°C
40
−0.1
−0.4 mA
−0.3 mA
−0.2 mA
−0.1 mA
−10 −12
−25°C
0
−1
−
0.01
−0.1
0
−2
−4
−6
−8
−10
)
Collector current IC mA
−100
−1000
−1
−10
−100
(
)
V
(
Collector-emitter voltage VCE
(
)
Collector current IC mA
SJH00022BED
9
UNR511x Series
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
VO = −0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
E = 0
Ta = 25°C
I
5
4
3
2
1
0
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
(
)
Output current IO mA
( )
Input voltage VIN V
Collector-base voltage VCB (V)
Characteristics charts of UNR511D
IC VCE
VCE(sat) IC
hFE IC
−60
−
100
160
120
80
IC / IB = 10
IB = − 1.0 mA
− 0.9 mA
Ta = 25˚C
VCE = −10 V
Ta = 75°C
− 0.8 mA
−50
−40
−30
−20
−10
0
−
10
25°C
− 0.3 mA
− 0.2 mA
−25°C
−1
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
Ta = 75°C
25°C
−
0.1
40
− 0.1 mA
−25°C
−
0.01
−0.1
0
−1
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−10
−100
−1000
(
)
Collector-emitter voltage VCE
V
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
5
4
3
2
1
0
VO = − 0.2 V
Ta = 25°C
VO = −5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.1
−1
−10
−100
−1.5
−2.0
−2.5
−3.0
−3.5
−4.0
(
)
( )
Input voltage VIN V
Output current IO mA
Collector-base voltage VCB (V)
SJH00022BED
10
UNR511x Series
Characteristics charts of UNR511E
IC VCE
VCE(sat) IC
hFE IC
−100
−10
400
300
200
100
0
−60
IC / IB = 10
IB = −1.0 mA
− 0.9 mA
Ta = 25°C
VCE = −10 V
− 0.8 mA − 0.7 mA
−50
−40
−30
−20
−10
0
− 0.3 mA
− 0.2 mA
−1
Ta = 75°C
− 0.6 mA
− 0.5 mA
− 0.4 mA
Ta = 75°C
25°C
− 0.1 mA
−0.1
25°C
−25°C
−25°C
−0.01
−0.1
−1
−10
−100
−1
−10
−100
−1000
0
−2
−4
−6
−8
−10 −12
(
)
Collector current IC mA
(
)
(
)
V
Collector current IC mA
Collector-emitter voltage VCE
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
6
5
4
3
2
1
0
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.01
−1.5
−2.0
−2.5
−3.0
−3.5
−4.0
−0.1
−1
−10
−100
−0.1
−1
−10
−100
(
)
(
)
Input voltage VIN
V
Collector-base voltage VCB (V)
Output current IO mA
Characteristics charts of UNR511F
IC VCE
VCE(sat) IC
hFE IC
−240
160
120
80
−100
−10
−1
IC / IB = 10
Ta = 25°C
VCE = −10 V
Ta = 75°C
IB = −1.0 mA
−0.9 mA
−0.8 mA
−0.7 mA
−0.6 mA
−200
−160
−120
−80
−40
0
25°C
−25°C
Ta = 75°C
−0.5 mA
25°C
−0.4 mA
−0.3 mA
−0.2 mA
40
−0.1
−25°C
−0.1 mA
−10 −12
0
−1
−
0.01
−0.1
0
−2
−4
−6
−8
−10
−100
−1000
−1
−10
−100
(
)
V
Collector-emitter voltage VCE
(
)
Collector current IC mA
(
)
Collector current IC mA
SJH00022BED
11
UNR511x Series
Cob VCB
IO VIN
VIN IO
6
−104
−103
−102
−10
−1
−100
−10
VO = −5 V
Ta = 25°C
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
5
4
3
2
1
0
−1
−0.1
−0.01
−0.1
−1
−10
−100
−0.4 −0.6 −0.8
−1.0
−1.2
−1.4
−0.1
−1
−10
−100
(
)
(
)
Collector-base voltage VCB (V)
Input voltage VIN
V
Output current IO mA
Characteristics charts of UNR511H
IC VCE
VCE(sat) IC
hFE IC
−100
−10
−120
240
200
160
120
80
IC / IB = 10
Ta = 25°C
VCE = −10 V
−100
−80
−60
−40
−20
0
IB = −0.5 mA
−0.4 mA
Ta = 75°C
25°C
−1
Ta = 75°C
25°C
−0.3 mA
−25°C
−0.2 mA
−0.1 mA
−0.1
−0.01
40
−25°C
0
−0.1
−1
−10
−100
−1000
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
(
)
(
)
(
)
Collector current IC mA
Collector-emitter voltage VCE
V
Collector current IC mA
Cob VCB
VIN IO
6
5
4
3
2
1
0
−100
−10
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
−0.1
−0.01
−1
−10
−100
−0.1
−1
−10
−100
Collector-base voltage VCB (V)
(
)
Output current IO mA
SJH00022BED
12
UNR511x Series
Characteristics charts of UNR511L
IC VCE
VCE(sat) IC
hFE IC
−240
−100
−10
240
200
160
120
80
IC / IB = 10
Ta = 25°C
VCE = −10 V
−200
−160
IB = −1.0 mA
−120
−1
Ta = 75°C
− 0.8 mA
Ta = 75°C
25°C
−80
−40
0
− 0.6 mA
25°C
−25°C
−0.1
− 0.4 mA
− 0.2 mA
–10 –12
−25°C
40
− 0.01
0
−1
0
–2
–4
–6
–8
−1
−10
−100
−1000
−10
−100
−1000
(
)
V
Collector-emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
VIN IO
−100
−10
6
5
4
3
2
1
0
VO = − 0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
−1
− 0.1
− 0.01
− 0.1
−1
−10
−100
−1
−10
−100
(
)
Output current IO mA
Collector-base voltage VCB (V)
Characteristics charts of UNR511M
IC VCE
VCE(sat) IC
hFE IC
500
400
300
200
100
0
240
−10
−1
IC / IB = 10
VCE = −10 V
Ta = 25°C
200
IB = −1.0 mA
−0.9 mA
−0.8 mA
−0.7 mA
160
−0.6 mA
Ta = 75°C
25°C
120
− 0.1
− 0.01
− 0.001
Ta = 75°C
25°C
−25°C
−0.5 mA
−0.4 mA
−0.3 mA
80
−25°C
40
−0.2 mA
−0.1 mA
0
−1
−10
−100
−1000
−1
−10
−100
−1000
0
−2
−4
−6
−8
−10 −12
(
)
V
(
)
Collector-emitter voltage VCE
Collector current IC mA
(
)
Collector current IC mA
SJH00022BED
13
UNR511x Series
Cob VCB
IO VIN
VIN IO
10−4
10−3
10−2
10−1
1
10
−100
−10
VO = −5 V
Ta = 25°C
VO = −0.2 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
8
6
4
2
0
−1
− 0.1
− 0.01
− 0.4 − 0.6 − 0.8 −1.0
−1.2
−1.4
− 0.1
−1
−10
−100
− 0.1
−1
−10
−100
( )
Input voltage VIN V
Collector-base voltage VCB (V)
(
)
Output current IO mA
Characteristics charts of UNR511N
IC VCE
VCE(sat) IC
hFE IC
−200
−10
300
250
200
150
100
50
IC / IB = 10
VCE = −10 V
Ta = 25°C
IB = −1.0 mA
−150
−100
−50
0
Ta = 75°C
−1
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
25°C
−25°C
Ta = 75°C
25°C
− 0.1
− 0.3 mA
− 0.2 mA
−25°C
− 0.1 mA
− 0.01
0
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
−1
−10
−100
−1 000
(
)
V
Collector-emitter voltage VCE
(
)
Collector current IC mA
(
)
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
–10
–1
6
5
4
3
2
1
0
−100
−10
f = 1 MHz
IE = 0
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
Ta = 25°C
−1
− 0.1
− 0.01
–1
–10
–100
− 0.1
−1
−10
−100
− 0.4 − 0.6 − 0.8 −1.0
−1.2
−1.4
Collector-base voltage VCB (V)
( )
V
Input voltage VIN
(
)
Output current IO mA
SJH00022BED
14
UNR511x Series
Characteristics charts of UNR511T
IC VCE
VCE(sat) IC
hFE IC
300
250
200
150
100
50
−200
−10
−1
IC / IB = 10
VCE = −10 V
Ta = 25°C
Ta = 75°C
−150
IB = −1.0 mA
– 0.9 mA
– 0.8 mA
– 0.7 mA
– 0.6 mA
– 0.5 mA
− 0.4 mA
25°C
−100
Ta = 75°C
25°C
−25°C
− 0.1
−50
− 0.3 mA
− 0.2 mA
− 0.1 mA
−25°C
0
−1
0
− 0.01
−10
−100
−1000
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
(
)
V
Collector-emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
IO VIN
VIN IO
−104
−103
−102
−10
−1
−100
−10
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
−1
− 0.1
− 0.01
− 0.1
−1
−10
−100
− 0.4 − 0.6 − 0.8
−1
−1.2
−1.4
(
)
(
)
Output current IO mA
Input voltage VIN
V
Characteristics charts of UNR511V
IC VCE
VCE(sat) IC
hFE IC
−12
−10
12
10
8
IC / IB = 10
VCE = −10 V
Ta = 25°C
IB = −1.0 mA
Ta = 75°C
−10
− 0.9 mA
25°C
− 0.8 mA
−1
−8
− 0.7 mA
Ta = 75°C
25°C
− 0.6 mA
−6
−4
−2
0
6
−25°C
− 0.5 mA
− 0.4 mA
− 0.1
4
−25°C
− 0.3 mA
− 0.2 mA
2
− 0.1 mA
−0.01
0
0
−2
−4
−6
−8
−10 −12
−1
−10
−100
−1000
−1
−10
−100
−1000
(
)
V
Collector-emitter voltage VCE
(
)
(
)
Collector current IC mA
Collector current IC mA
SJH00022BED
15
UNR511x Series
IO VIN
VIN IO
−104
−100
−10
VO = −5 V
Ta = 25°C
VO = − 0.2 V
Ta = 25°C
−103
−102
−10
−1
− 0.1
− 0.01
−1
− 0.1
−1
−10
−100
− 0.4 − 0.6 − 0.8 −1.0
−1.2
−1.4
(
)
V
Input voltage VIN
(
)
Output current IO mA
Characteristics charts of UNR511Z
IC VCE
VCE(sat) IC
hFE IC
−10
−1
300
250
200
150
100
50
−200
IC / IB = 10
VCE = −10 V
Ta = 25°C
−150
IB = −1.0 mA
Ta = 75°C
−25°C
− 0.9 mA
25°C
− 0.8 mA
−100
− 0.7 mA
Ta = 75°C
−25°C
− 0.6 mA
− 0.5 mA
− 0.1
25°C
− 0.4 mA
−50
− 0.3 mA
− 0.2 mA
− 0.1 mA
− 0.01
0
−1
0
−1
−10
−100
−1000
−10
−100
−1000
0
−2
−4
−6
−8
−10 −12
(
)
(
)
Collector-emitter voltage VCE
V
(
)
Collector current IC mA
Collector current IC mA
Cob VCB
IO VIN
VIN IO
−104
−103
−102
−10
–1
−100
−10
6
5
4
3
2
1
0
VO = –5 V
Ta = 25°C
VO
0.2 V
Ta = 25°C
=
f = 1 MHz
IE = 0
Ta = 25°C
−1
− 0.1
− 0.01
− 0.4 − 0.6 − 0.8
−1
−1.2
−1.4
− 0.1
−1
−10
−100
−1
−10
−100
(
)
V
Input voltage VIN
(
)
Output current IO mA
Collector-base voltage VCB (V)
SJH00022BED
16
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
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• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
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2003 SEP
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