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XN611FHTX

更新时间：2024-11-08 13:12:08

品牌：PANASONIC

描述：Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

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概述
规格参数
数据手册

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XN611FHTX 概述

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon 小信号双极晶体管

XN611FHTX 规格参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.84
最大集电极电流 (IC)：	0.1 A	集电极-发射极最大电压：	50 V
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	30
JESD-30 代码：	R-PDSO-G6	元件数量：	2
端子数量：	6	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管元件材料：	SILICON	Base Number Matches：	1

XN611FHTX 数据手册

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Composite Transistors

XN611FH

Silicon PNP epitaxial planer transistor

Unit: mm

2.8⁺^–0⁰^.^.³²

For switching/digital circuits

0.65±0.15

1.5⁺^–0⁰^.^.⁰²⁵⁵

0.65±0.15

Features

■

●

Two elements incorporated into one package.

(Transistors with built-in resistor)

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

UN111F+UN111H

■

0.1 to 0.3

●

0.4±0.2

[Tr1]

[Tr2]

1 : Collector (Tr1)

2 : Base (Tr1)

3 : Collector (Tr2)

4 : Base (Tr2)

5 : Emitter (Tr2)

6 : Emitter (Tr1)

EIAJ : SC–74

Absolute Maximum Ratings (Ta=25˚C)

■

Mini Type Package (6–pin)

Parameter

Symbol

V_CBO

V_CEO

I_C

Ratings

–50

Unit

Collector to base voltage

Collector to emitter voltage

Collector current

Collector to base voltage

Collector to emitter voltage

Collector current

Total power dissipation

Marking Symbol: 4S

Internal Connection

Tr1

Tr2

–50

–100

–50

V_CBO

V_CEO

I_C

Tr1

–50

–100

300

˚C

P_T

Tr2

Overall Junction temperature

Storage temperature

T_j

150

T_stg

–55 to +150

˚C

Composite Transistors

XN611FH

Electrical Characteristics (Ta=25˚C)

Tr1

■

●

Parameter

Symbol

V_CBO

Conditions

I_C= –10µA, I_E= 0

min

–50

typ

max

Unit

Collector to base voltage

Collector to emitter voltage

V_CEO

I_CBO

I_CEO

I_EBO

h_FE

I_C= –2mA, I_B= 0

V_CB= –50V, I_E= 0

– 0.1

– 0.5

–1.0

µA

Collector cutoff current

V_CE= –50V, I_B= 0

Emitter cutoff current

V_EB= –6V, I_C= 0

Forward current transfer ratio

V_CE= –10V, I_C= –5mA

I_C= –10mA, I_B= – 0.3mA

V_CC= –5V, V_B= – 0.5V, R_L= 1kΩ

V_CC= –5V, V_B= –2.5V, R_L= 1kΩ

V_CB= –10V, I_E= 1mA, f = 200MHz

Collector to emitter saturation voltage V_CE(sat)

– 0.25

– 0.2

Output voltage high level

Output voltage low level

Transition frequency

Input resistance

V_OH

V_OL

f_T

–4.9

4.7

MHz

kΩ

R₁

–30%

+30%

Resistance ratio

R₁/R₂

0.47

●

Tr2

Parameter

Symbol

Conditions

I_C= –10µA, I_E= 0

min

–50

typ

max

Unit

Collector to base voltage

V_CBO

V_CEO

I_CBO

I_CEO

I_EBO

h_FE

Collector to emitter voltage

I_C= –2mA, I_B= 0

V_CB= –50V, I_E= 0

– 0.1

– 0.5

µA

Collector cutoff current

V_CE= –50V, I_B= 0

Emitter cutoff current

V_EB= –6V, I_C= 0

Forward current transfer ratio

V_CE= –10V, I_C= –5mA

I_C= –10mA, I_B= – 0.3mA

V_CC= –5V, V_B= – 0.5V, R_L= 1kΩ

V_CC= –5V, V_B= –2.5V, R_L= 1kΩ

V_CB= –10V, I_E= 1mA, f = 200MHz

Collector to emitter saturation voltage V_CE(sat)

– 0.25

– 0.2

Output voltage high level

Output voltage low level

Transition frequency

Input resistance

V_OH

V_OL

f_T

–4.9

2.2

MHz

kΩ

R₁

–30%

0.17

+30%

0.27

Resistance ratio

R₁/R₂

0.22

Composite Transistors

XN611FH

Common characteristics chart

P_T— Ta

500

400

300

200

100

120

160

)

(

Ambient temperature Ta ˚C

Characteristics charts of Tr1

I_C— V_CE

V_CE(sat)— I_C

h_FE— I_C

–240

–200

–160

–120

–80

–40

–100

160

120

I_C/I_B=10

Ta=25˚C

V_CE=–10V

Ta=75˚C

–30

–10

I_B=–1.0mA

–0.9mA

–0.8mA

–0.7mA

–0.6mA

–3

–1

25˚C

–25˚C

Ta=75˚C

–0.5mA

–0.3

–0.1

25˚C

–0.4mA

–0.3mA

–0.2mA

–0.03

–0.01

–25˚C

–0.1mA

–2

–4

–6

–8

–10 –12

–0.1 –0.3

–1

–3

–10 –30 –100

–1

–3

–10 –30 –100 –300 –1000

( )

(

)

(

)

Collector to emitter voltage V_CE

Collector current I_CmA

C_ob— V_CB

I_O— V_IN

V_IN— I_O

–100

–10000

V_O=–0.2V

Ta=25˚C

V_O=–5V

Ta=25˚C

f=1MHz

I_E=0

Ta=25˚C

–30

–10

–3000

–1000

–3

–1

–300

–100

–0.3

–0.1

–30

–10

–0.03

–0.01

–3

–1

–0.1 –0.3

–1

–3

–10 –30 –100

–0.1 –0.3

–1

–3

–10 –30 –100

–0.4

–0.6

–0.8

–1.0

–1.2

–1.4

( )

Output current I_OmA

(

)

( )

Collector to base voltage V_CB

Input voltage V_IN

Composite Transistors

XN611FH

Characteristics charts of Tr2

I_C— V_CE

V_CE(sat)— I_C

h_FE— I_C

–120

–100

–10

240

200

160

120

I_C/I_B=10

Ta=25˚C

V_CE=–10V

–100

–80

–60

–40

–20

I_B=–0.5mA

–0.4mA

Ta=75˚C

25˚C

–1

Ta=75˚C

25˚C

–0.3mA

–25˚C

–0.2mA

–0.1

–25˚C

–0.1mA

–0.01

–2

–4

–6

–8

–10 –12

–1

–3

–10 –30 –100 –300 –1000

–0.1 –0.3

–1

–3

–10 –30 –100

(

)

Collector to emitter voltage V_CE

(

)

( )

Collector current I_CmA

C_ob— V_CB

V_IN— I_O

–100

–10

f=1MHz

I_E=0

Ta=25˚C

V_O=–0.2V

Ta=25˚C

–1

–0.1

–0.01

–0.1 –0.3

–1

–3

–10

–30

–100

–1

–3

–10 –30 –100

(

)

Collector to base voltage V_CB

(

)

Output current I_OmA

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