XN7651 [PANASONIC]
Silicon NPN/PNP epitaxial planer transistor; 硅NPN / PNP外延平面晶体管
| 型号： | XN7651 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN/PNP epitaxial planer transistor |
| 文件： | 总5页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XN07651 (XN7651)
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
Unit: mm
+0.20
–0.05
1.9 0.1
(0.95) (0.95)
2.90
For motor drive
+0.10
–0.06
0.16
4
3
5
6
I Features
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
2
1
+0.10
–0.05
+0.10
–0.05
0.30
0.50
I Basic Part Number of Element
• 2SB0970 (2SB970) + ARN-5
10°
I Abosolute Maximum Ratings Ta = 25°C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Rating
20
Unit
V
Tr1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
1: Collector (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
15
V
7
V
EIAJ : SC-74
0.55
1.1
A
Marking Symbol: 9W
Internal Connection
Peak collector current
ICP
A
1
Collector current *
IC
0.7
A
Tr2
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
VCBO
VCEO
VEBO
IC
−15
V
4
5
6
−10
V
−7
V
Tr1
Tr2
− 0.55
−1.1
− 0.7
350
A
Peak collector current
ICP
A
1
Collector current*
IC
A
3
2
1
Overall Total power dissipation
Total power dissipation*
Junction temperature
PT
mW
mW
°C
°C
2
PT
750
Tj
150
Storage temperature
Tstg
−55 to +150
Note) 1: T = −20°C 2°C
*
a
2: An instantaneous total power dissipation (for the single pulse of 50 ms)
*
Note) The part number in the parenthesis shows conventional part number.
Publication date: September 2001
SJJ00243AED
1
XN07651
I Electrical characteristics Ta = 25°C 2°C
• Tr1
Parameter
Collector to base voltage
Collector to emittter voltage
Emitter to base voltage
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
IC = 10 µA, IE = 0
Min
20
15
7
Typ
Max
Unit
V
IC = 1 mA, IB = 0
V
IE = 10 µA, IC = 0
V
Collector cutoff current
Forward current transfer ratio
VCB = 15 V, IE = 0
0.1
µA
V
1
*
hFE1
hFE2
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 1 A
IC = 0.3 A, IB = 8 mA
IC = 0.7 A, IB = 8 mA
IF = 0.55 A
200
60
800
1
*
1
1
*
*
Collector to emitter saturation voltage VCE(sat)1
VCE(sat)2
0.2
0.5
1.4
V
2
*
Diode forward voltage
Transition frequency
VF
fT
Cob
V
VCB = 10 V, IE = −50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
200
10
MHz
pF
Collector output capacitance
• Tr2
Parameter
Collector to base voltage
Collector to emittter voltage
Emitter to base voltage
Symbol
VCBO
VCEO
VEBO
ICBO
Conditions
Min
Typ
Max
Unit
V
IC
IC
=
=
−
10 µA, IE = 0
1 mA, IB = 0
−
−
15
10
−
V
IE =
VCB
VCE
VCE
−
10 µA, IC = 0
10 V, IE = 0
−
7
V
Collector cutoff current
Forward current transfer ratio
=
=
=
−
−
−
−
0.1
µA
V
1
*
hFE1
hFE2
−
−
2 V, IC
2 V, IC
=
=
−
0.5 A
1 A
100
60
350
1
*
−
1
1
*
*
Collector to emitter saturation voltage VCE(sat)1
VCE(sat)2
IC
IC
=
=
0.3 A, IB
0.7 A, IB
=
−
8 mA
8 mA
−
0.22
=
−
−
0.6
V
Transition frequency
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
130
22
MHz
pF
Collector output capacitance
Cob
Note) 1: Pulse measurement
*
2: Effective for the transistor with a built-in diode
*
Common characteristics chart
PT Ta
400
350
300
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
SJJ00243AED
2
XN07651
Characteristics charts of Tr1
IC VCE
IC IB
VCE(sat) IC
1
0.6
1.2
1.0
0.8
0.6
0.4
0.2
0
IC / IB = 37.5
VCE = 10 V
Ta = 25˚C
Ta = 25˚C
IB = 1 mA
0.9 mA
0.5
0.8 mA
0.7 mA
0.4
0.6 mA
0.5 mA
0.1
0.3
0.4 mA
Ta = 75°C
0.2
0.1
0
0.3 mA
0.2 mA
0.1 mA
–25°C
25°C
0.01
0.001
0.01
0.1
1
0
1
2
3
4
5
6
)
0
0.001 0.002 0.003 0.004 0.005 0.006
(
)
A
Collector current IC
(
(
)
A
Collector to emitter voltage VCE
V
Base current IB
hFE IC
Cob VCB
800
700
600
500
400
300
200
100
0
100
10
1
VCE = 2 V
f = 1 MHz
Ta = 25°C
Ta = 75°C
25°C
−25°C
0.001
0.01
0.1
1
0
5
10
15
20
25
(
)
( )
Collector to base voltage VCB V
Collector current IC
A
Characteristics charts of Tr2
IC VCE
VCE(sat) IC
VBE(sat) IC
−10
− 0.35
−1
IC / IB = 50
Ta = 25˚C
IC / IB = 50
IB = −10 mA
− 0.3
− 0.25
− 0.2
− 0.15
− 0.1
− 0.05
0
−9 mA
−8 mA
Ta = 75°C
–25°C
−7 mA
−6 mA
25°C
Ta = –25°C
75°C
−1
− 0.1
−5 mA
−4 mA
25°C
−3 mA
−2 mA
−1 mA
−
0.1
− 0.01
−
0.01
− 0.01
− 0.1
−1
0
−1
−2
−3
−4
−5
−6
− 0.1
−1
(
)
A
Collector current IC
(
)
V
Collector to emitter voltage VCE
( )
Collector current IC A
SJJ00243AED
3
XN07651
hFE IC
Cob VCB
400
350
300
250
200
150
100
50
1000
100
10
VCE = −2 V
f = 1 MHz
Ta = 25°C
Ta = 75°C
25°C
−25°C
0
− 0.001
− 0.01
− 0.1
−1
0
−2 −4 −6 −8 −10 −12 −14 −16
(
)
Collector current IC
A
( )
Collector to base voltage VCB V
SJJ00243AED
4
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2001 MAR
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