XP1112 [PANASONIC]
Silicon PNP epitaxial planer transistor; PNP硅外延平面晶体管
| 型号： | XP1112 |
| 厂家： | 
PANASONIC |
| 描述： | Silicon PNP epitaxial planer transistor |
| 文件： | 总3页 (文件大小：397K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Composite Transistors
XP01112 (XP1112)
Silicon PNP epitaxial planer transistor
Unit: mm
+0.05
–0.02
0.12
For switching/digital circuits
0.20±0.05
5
4
3
Features
I
G
Two elements incorporated into one package.
1
2
(Emitter-coupled transistors with built-in resistor)
(0.65) (0.65)
G
Reduction of the mounting area and assembly cost by one half.
1.3±0.1
2.0±0.1
10°
Basic Part Number of Element
UNR1112(UN1112) × 2 elements
I
G
Absolute Maximum Ratings (Ta=25˚C)
1 : Base (Tr1)
2 : Emitter
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Collector (Tr1)
EIAJ : SC–88A
I
Parameter
Symbol
VCBO
VCEO
IC
Ratings
–50
Unit
V
SMini5-G1 Package
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Rating
of
element
–50
V
Marking Symbol: 7K
Internal Connection
–100
mA
mW
˚C
PT
150
Overall Junction temperature
Storage temperature
Tj
150
Tr1
1
5
4
Tstg
–55 to +150
˚C
2
3
Tr2
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
VCBO
Conditions
min
–50
–50
typ
max
Unit
V
Collector to base voltage
IC = –10µA, IE = 0
Collector to emitter voltage
VCEO
ICBO
ICEO
IEBO
hFE
IC = –2mA, IB = 0
VCB = –50V, IE = 0
VCE = –50V, IB = 0
VEB = –6V, IC = 0
V
– 0.1
– 0.5
– 0.2
µA
µA
mA
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
VCE = –10V, IC = –5mA
60
hFE (small/large)*1 VCE = –10V, IC = –5mA
0.5
0.99
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = – 0.3mA
– 0.25
– 0.2
V
V
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
VOH
VOL
fT
VCC = –5V, VB = – 0.5V, RL = 1kΩ
VCC = –5V, VB = –2.5V, RL = 1kΩ
VCB = –10V, IE = 1mA, f = 200MHz
–4.9
V
80
22
MHz
kΩ
R1
–30%
0.8
+30%
1.2
Resistance ratio
R1/R2
1.0
*1 Ratio between 2 elements
Note) The Part number in the Parenthesis shows conventional part number.
1
Composite Transistors
XP01112
PT — Ta
250
200
150
100
50
0
0
20 40 60 80 100 120 140 160
(
)
Ambient temperature Ta ˚C
IC — VCE
VCE(sat) — IC
hFE — IC
400
300
200
100
0
–100
–160
–140
–120
–100
–80
–60
–40
–20
0
IC/IB=10
VCE=–10V
Ta=25˚C
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–30
–10
–0.6mA
–3
–1
–0.5mA
–0.4mA
Ta=75˚C
25˚C
–0.3mA
–0.2mA
–0.3
–0.1
–25˚C
Ta=75˚C
25˚C
–25˚C
–0.1mA
–0.03
–0.01
–1
–3
–10 –30 –100 –300 –1000
0
–2
–4
–6
–8
–10 –12
–0.1 –0.3
–1
–3
–10 –30 –100
(
)
Collector current IC mA
( )
V
(
)
Collector to emitter voltage VCE
Collector current IC mA
Cob — VCB
IO — VIN
VIN — IO
–100
6
5
4
3
2
1
0
–10000
VO=–5V
Ta=25˚C
VO=–0.2V
Ta=25˚C
f=1MHz
IE=0
Ta=25˚C
–3000
–1000
–30
–10
–300
–100
–3
–1
–30
–10
–0.3
–0.1
–3
–1
–0.03
–0.01
–0.1 –0.3
–10 –30 –100
–0.1 –0.3
–1
–3
–10 –30 –100
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
(
V
)
( )
Input voltage VIN V
(
)
Output current IO mA
Collector to base voltage VCB
2
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Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
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2001 MAR
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