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2N7002DWT/R13

更新时间：2024-09-18 05:27:59
品牌：PANJIT
描述：DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS

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2N7002DWT/R13 概述

DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS 双N沟道增强型MOSFET 小信号场效应晶体管

2N7002DWT/R13 规格参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.55Is Samacsys：N
其他特性：ULTRA-LOW RESISTANCE配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (ID)：0.115 A
最大漏源导通电阻：5 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：5 pFJESD-30 代码：R-PDSO-G6
元件数量：2端子数量：6
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
表面贴装：YES端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2N7002DWT/R13 数据手册

通过下载2N7002DWT/R13数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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2N7002DW  
DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS  
This space-efficient device contains two electrically-isolated N-Channel  
enhancement-mode MOSFETs. It comes in a very small SOT-363 (SC70-6L)  
package. This device is ideal for portable applications where board space is  
at a premium.  
SOT- 363  
4
FEATURES  
5
Dual N-Channel MOSFETS in Ultra-Small SOT-363 Package  
Low On-Resistance  
Low Gate Threshold Voltage  
6
3
2
1
Fast Switching  
Available in lead-free plating (100% matte tin finish)  
4
6
5
2
APPLICATIONS  
Switching Power Supplies  
Hand-Held Computers, PDAs  
1
3
MARKING CODE: 702  
T = 25°C Unless otherwise noted  
MAXIMUM RATINGS  
J
Rating  
Symbol  
Value  
60  
Units  
V
Drain-Source Voltage  
Drain-Gate Voltage (Note 1)  
Gate-Source Voltage  
Drain Current  
V
V
V
DSS  
V
60  
DGR  
V
20  
GSS  
I
D
115  
200  
mA  
mW  
°C  
P
T
T
Total Power Dissipation (Note 2)  
Operating Junction Temperature Range  
Storage Temperature Range  
D
J
-55 to 150  
-55 to 150  
°C  
stg  
Note 1. R < 20K ohms  
GS  
THERMAL CHARACTERISTICS  
Symbol  
Characteristic  
Value  
625  
Units  
Thermal Resistance, Junction to Ambient (Note 2)  
R
°C/W  
thja  
Note 2. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout  
8/11/2005  
Page 1  
www.panjit.com  
2N7002DW  
T = 25°C Unless otherwise noted  
Electrical Characteristics (Each Device)  
J
OFF CHARACTERISTICS (Note 3)  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max Units  
BV  
Drain-Source Breakdown Voltage  
I = 10µA, V = 0V  
60  
-
80  
-
-
V
DSS  
GS  
D
T =25°C  
1.0  
500  
±10  
J
Zero Gate Voltage Drain Current  
I
µA  
nA  
V
= 60V, V = 0  
DSS  
DS  
GS  
T =125°C  
-
-
J
I
-
-
Gate-Body Leakage  
V
= ±20V, V = 0V  
GSS  
GS  
DS  
ON CHARACTERISTICS (Note 3)  
Parameter  
Gate Threshold Voltage  
Symbol  
Conditions  
Min  
1.0  
-
Typ  
1.6  
1.8  
2.0  
1.65  
-
Max Units  
V
V
= V , I = 250µA  
D
GS  
2.0  
4.5  
7.0  
-
V
GS(th)  
DS  
V
= 5V, I = 0.05A  
D
GS  
R
Static Drain-Source On-Resistance  
Ohms  
DS(ON)  
-
V
= 10V, I = 0.5A  
D
GS  
I
On-State Drain Current  
0.5  
0.08  
A
S
D(ON)  
V
V
= 10V, V = 7.5V  
DS  
GS  
g
= 10V, I = 0.2A  
-
Forward Transconductance  
D
FS  
DS  
DYNAMIC CHARACTERISTICS  
Parameter  
Input Capacitance  
Symbol  
Conditions  
Min  
Typ  
Max Units  
C
-
-
-
-
50  
pF  
iss  
V
V
= 25V,  
DS  
= 0V,  
C
oss  
Output Capacitance  
-
-
25  
5.0  
pF  
pF  
GS  
f = 1.0MHz  
C
Reverse Transfer Capacitance  
rss  
SWITCHING CHARACTERISTICS  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max Units  
Turn-On Delay Time  
t
-
-
-
-
20  
20  
ns  
ns  
D(ON)  
V =30V, I =0.2A, R =150ohm  
L
DD  
D
R
= 25ohm, V  
= 10V  
GEN  
GEN  
t
Turn-Off Delay Time  
D(OFF)  
Note 3. Short duration test pulse used to minimize self-heating  
8/11/2005  
Page 2  
www.panjit.com  
2N7002DW  
Typical Characteristics Curves (Each Device)  
T = 25°C Unless otherwise noted  
J
1.2  
1
1
VDS =10V  
5.0V  
0.8  
4.0V  
0.8  
0.6  
0.4  
0.2  
0
0.6  
V
G
S
= 6V, 7V, 8V, 9V, 10V  
0.4  
25oC  
3.0V  
0.2  
0
0
1
2
3
4
5
6
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)  
V
DS - Drain-to-Source Voltage (V)  
Fig. 1. Output Characteristics  
Fig. 2. Transfer Characteristics  
10  
10  
8
8
6
4
2
0
6
4
VGS 4.5V  
=
Ids=500mA  
Ids=50mA  
2
VGS=10.0V  
0
2
4
6
8
10  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
VGS - Gate-to-Source Voltage (V)  
ID - Drain Current (A)  
Fig. 3. On-Resistance vs. Drain Current  
Fig. 4. On-Resistance vs. G-S Voltage  
10  
1.1  
I =250 A  
µ
VGS = 0V  
D
1.05  
1
1
0.1  
0.95  
0.9  
0.85  
0.8  
25
oC  
0.01  
-50 -25  
0
25 50  
75 100 125 150  
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
TJ - Junction Temperature (oC)  
VSD - Source-to-DrainVoltage (V)  
Fig. 5. Threshold Voltage vs. Temperature  
Fig. 6. Sourse-Drain Diode Forward Voltage  
8/11/2005  
www.panjit.com  
Page 3  
2N7002DW  
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS  
ORDERING INFORMATION  
2N7002DW T/R7 - 7 inch reel, 3K units per reel  
2N7002DW T/R13 - 13 inch reel, 10K units per reel  
Copyright PanJit International, Inc 2005  
The information presented in this document is believed to be accurate and reliable. The specifications and information  
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the  
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or  
systems. Pan Jit does not convey any license under its patent rights or rights of others.  
8/11/2005  
www.panjit.com  
Page 4  

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