2N7002DW_12 [UTC]

300mA, 60V DUAL N-CHANNEL POWER MOSFET; 300毫安， 60V双N沟道功率MOSFET


型号：	2N7002DW_12
厂家：	Unisonic Technologies
描述：	300mA, 60V DUAL N-CHANNEL POWER MOSFET 300毫安， 60V双N沟道功率MOSFET
文件：	总6页 (文件大小：286K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

2N7002DW

Power MOSFET

300mA, 60V DUAL

N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 2N7002DW uses advanced technology to provide

excellent R_DS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

FEATURES

* High Density Cell Design for Low R_DS(ON)

* Voltage Controlled Small Signal Switch

* Rugged and Reliable

* High Saturation Current Capability

SYMBOL

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

SOT-363

Packing

Lead Free

Halogen Free

2N7002DWL-AL6-R

2N7002DWG-AL6-R

Tape Reel

S1 G1 D2 S2 G2 D1

MARKING

G: Halogen Free

L: Lead Free

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Power MOSFET

ABSOLUTE MAXIMUM RATINGS (T_A=25°C, unless otherwise noted.)

PARAMETER

SYMBOL

V_DSS

RATINGS

UNIT

Drain-Source Voltage

Drain-Gate Voltage (R_GS≤1MΩ)

V_DGR

Continuous

±20

±40

300

Gate Source Voltage

Drain Current

V_GSS

I_D

Non Repetitive(t_P<50μs)

Continuous

Pulsed

800

Power Dissipation

200

mW/°C

°C

P_D

Derated Above 25°C

Junction Temperature

Storage Temperature

1.6

T_J

+ 150

-55 ~ +150

T_STG

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θ_JA

625 (Note1)

°C/W

ELECTRICAL CHARACTERISTICS (T_A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

V_GS=0V, I_D=10μA

V_DS=60V, V_GS=0V

V_GS=20V, V_DS=0V

V_GS=-20V, V_DS=0V

μA

I_GSSF

I_GSSR

100

-100

Gate-Source Leakage Current

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

V_GS(TH)V_GS= V_DS, I_D=250μA

_GS= 10V, I_D=300mA

V_GS= 5.0V, I_D=50mA

_GS=10V, I_D=300mA,T_J=125°C

2.1

0.6

2.5

3.75

1.5

Drain-Source On-Voltage

V_{DS (ON)}

0.09

13.5

7.5

Ω

Static Drain-Source On-Resistance

R_{DS (ON)}

V_GS=5.0V, I_D=50mA

DYNAMIC CHARACTERISTICS

Input Capacitance

C_ISS

C_OSS

C_RSS

V_DS=25V,V_GS=0V,f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

V_DD=30V, R_L=150Ω

Turn-On Time

t_ON

I_D=200mA, V_GS=10V

R_GEN=25Ω

V_DD=30V, R_L=25Ω

I_D=200mA, V_GS=10V

Turn-Off Time

t_OFF

R_GEN=25Ω

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

Maximum Pulsed Drain-Source Diode

Forward Current

V_SD

I_SM

V_GS=0V, Is=300mA (Note )

0.88

1.5

0.8

Maximum Continuous Drain-Source

Diode Forward Current

300

Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.

2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%

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2N7002DW

Power MOSFET

TEST CIRCUIT AND WAVEFORM

V_DD

R_L

V_IN

V_OUT

V_GS

R_GEN

DUT

Fig. 1

t_ON

t_OFF

t_D(ON)

t_D(OFF)

t_R

t_F

90%

Output, V_OUT

10%

50%

10%

90%

Inverted

Input, V_IN

10%

50%

Pulse Width

Fig. 2 Switching Waveforms

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2N7002DW

Power MOSFET

TYPICAL CHARACTERISTICS

On-Resistance Varisation with Drain

On-Resistance Varisation with Temperature

Current and Temperature

V_GS=10V

I_D=300mA

2.5

1.75

1.5

T_J=125°C

25°C

1.25

1.5

0.5

0.75

0.5

150

0.4

1.2

Drain Current,I_D(A)

1.6

75 100 125

0.8

Junction Temperature, T_J(°C)

Gate Threshold Varisation with Temperature

Transfer Characteristics

1.1

1.0

0.8

0.6

0.4

V_GS= V_DS

I_D= 1mA

V_DS=10V

25°C

125°C

1.05

0.95

0.9

0.2

0.85

0.8

-25

75 100 125 150

-50

Gate to Source Voltage, V_GS(V)

Junction Temperature, T_J(°C)

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2N7002DW

Power MOSFET

TYPICAL CHARACTERICS (Cont.)

Body Diode Forward Voltage Varisation

with Temperature

Breakdown Voltage Varisation

with Temperature

1.1

V_GS=0V

I_D= 250μA

1.075

1.05

0.5

T_J=125°C

25°C

0.1

1.025

0.05

0.01

0.975

0.005

0.95

0.001

0.925

1.2

1.4

0.8

-50

150

125

75 100

0.2

0.4

0.6

-25

Body Diode Forward Voltage, V_SD(V)

Junction Temperature, T_J(°C)

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2N7002DW

Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

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